V 90150 Search Results

4007 mosfet

Abstract: 3122V 3152V SLA7020M SI-7230M 3122P STR9005 SI-3052P SI-3052V SI-7200E
Contextual Info: B H y b rd Voltage Regulators Linear Type] STR90050 90090 90120 90150 V im lout PC Top T stg Vout (V (A) (W) co CC) (V) 5 ±0.1 25 50 - 2 0 ~ + 100 (Tc) 30 —30— i-125 9±0.1 12±0.2 1.0 15+0.2 (Ta = 2 5 ’0 A V o/ A T L in e Reg. L o a d Reg. Ripp le Rej.

BAW21

Abstract: 3595 BAW55 BAY41 diode BAW55 SFD79 1N3595 BAY74 BAY 42 CB-127
Contextual Info: silicon signal diodes diodes de signal au silicium Vr-Vrm Type •o max V vF / max max (mAI (V) low leakage O 1HOMSON-CSF IR if Vr / max (nA) IfflA) ■R C t|T max max (pF) Vs ) / Vr Tamb 150°C max ^A ) (V) (V) Tamb = 25°C / Case if ImAI faible courant de fuite

2SD737

Abstract: 2SD744 2sb737 equivalent 2SD712 2SD736A 2SD778 2SD717 2SB699 2sd730 2SB737
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Pc (mA) (mW) Electrical characteristics (Ta=25ºC) DC Current Gain fab/ft* Cob hFE VCE Ic (ºC) (MHz) (pF) (V) (mA) Tj ºñ°í 2SD701 2SD702 400 5 40A 2SD703 200 5 30A 2SD704 50 7 5A 2SD705

LM 9015

Abstract: 3152P 3052p 20h100 STR 90120 3052V stepping motor pm 25 15-02 3152v SI-3052P 3242P
Contextual Info: SANKEN ELECTRI C U S A HE D I VTTDTm o | /3 B Hybrid Voltage Regulators [Linear Type] PC V (A) (W) E lectrical C haracteristics (T a = 2 5 'C ) o O , I- ^ Type No. lout Tstg Vout Vchf cc) (V) (V) Vo/ a t a (Ta = 25’C) Line Reg. Load Reg. Ripple Rej. (mV)

transistor 2sc2482

Contextual Info: MCC TO-92MOD Plastic-Encapsulate T ran sisto rs^ ^ ^ 2SC2482 TRANSISTOR NPN FEATURES P cm: 0.9 W (Tam b=25°C) IcM: 0.1 A M atage W ÈÉÈÉÈÊ é a m V(BR)CBO: . 300 v W j W Ü t t j g i ^ sto rag e Junction tem perature range Tj.Tstg: -55t: to + 150°C

Diode BAY 46

Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a

WF1024K32-XXX

Contextual Info: ca W PF1024K32-XPBX M/HITE / M I C R O E L E C T R O N I C S 1024Kx32 FLASH BALL GRID ARRAY PRELIMINARY* FEATURES • Access Times 90-150nS ■ ■ Perim eter Ball Grid Packaging ■ Low Power CMOS • 35mm BGA: 5 V o lt P o w e r S up p ly, 12 V pp pitch on same row - 0.120"

cs9011j

Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
Contextual Info: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •

HT 1000-4 power amplifier

Abstract: triac tag 8739 H48 zener diode TRIAC TAG 8812 Zener diode H48 h48 diode zener loctite 5145 RF MODULE CIRCUIT DIAGRAM z 10 cd harris transistor f6 13003 OM370
Contextual Info: TECHNICAL MANUAL SigmaPLUS IOT Transmitters I Introduction II Installation & Checkout III Operation IV Theory of Operation V Maintenance & Alignments VI Troubleshooting VII Parts List VIII Subsections T.M. No. 888-2430-001 Copyright HARRIS CORPORATION

transistor C2482

Abstract: C2482 Elite Enterprises TRANSISTOR NPN C2482 C2482 Transistor C2482 NPN Transistor c2482 npn C2482 C Elite Enterprises H.K C2482 data sheet
Contextual Info: C2482 NPN Epitaxial Silicon Transistor TO – 92L Features Collection Dissipation : PC max = 900mW Collector-Emitter Voltage : VCEO = 300V Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage

B250C1500/1000

Abstract: B250C1500 1000 MUR856 zero crossing detector ic with 230v rm14 N67 S14 k250 230v ac dc smps circuit 220V ac to 96V dc converter 30w tda power amplifier ic 220V ac to 96V dc converter circuit
Contextual Info: Version 1.2 , Oct. 2003 Application Note AN-PFC-TDA4862-1 TDA4862 TDA4862 - Technical Description Authors: Wolfgang Frank Michael Herfurth Published by Infineon Technologies AG http://www.infineon.com/pfc Power Management & Supply N e v e r s t o p t h i n k i n g

9015

Abstract: 66 94V-0 66 94V0 a/2SD 9015
Contextual Info: A" Jlanoda C? *5 I 9015 -6 - * m 2JS* > V. j vJT J-X J Z J A.* f I 1 :3 =3 E3 ii . . i i Specification = 1 Part Number Circuits Dimensions 9015-0200 2 A 2.50 Part No. : 9015 9015-0300 3 5.00 8.25 Housing Mateiral : Nylon 66 94V-0

MwT-H22

Abstract: H273
Contextual Info: ni CR O U A V E T E C H N O L O G Y bbE i • b l B H l D D □ 0 D D 2 3 H T5T ■ HRUV MwT - H2 26 GHz High Power Pseudomorphic HEMT GaAs FET MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +23 DBM OUTPUT POWER AT 12 GHZ

D-32823

Abstract: tornillo D3282 9015076 9 pole sub-d male SUB-D 1 647c
Contextual Info: Seite: 1 Phoenix Contact GmbH & Co. KG D-32823 Blomberg, Germany Fax +49- 0 5235-341200, Tel. +49-(0)5235-300 Abmessungen / Dimensions 64,7 C TNR 9015076–00 / 03.2003 www.phoenixcontact.com DEUTSCH 16 Anzahl der Pole A Amount of [mm] positions ENGLISH Cable Interface SUBCON 9-SH

CCPD 33 CB 100MHz

Abstract: 66DPA
Contextual Info: Section I. Stratix IV Device Datasheet This section includes the following chapters: • Chapter 1, DC and Switching Characteristics Revision History Refer to each chapter for its own specific revision history. For information on when each chapter was updated, refer to the Chapter Revision Dates section, which appears

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2482 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: 0.1 A Collector-base voltage

E86015

Abstract: E86015 LR-38486 C3-A30/24VDC RELECO C3-A30 FX 24 VDC LR38486 C3-A30FX vde 0435 c250 delay on timer vde 0435 c250 Releco C3-A3 C3-A30, RELECO
Contextual Info: b ^ e O i- S Ô U 9S 0 -a iA I s A e ia y ^ . M o |B i4 s n p u | a aJ - L 'L - \c l 6 Releco Industrial Relays Plug In Relays • Octal and 11 -pin plug-in • 2 and 3 pole Sensitive Relays • 1, 2 and 3 pole • 250, 500 and 800 mW coil Magnetic Latching Relays

EN61000-3-3

Abstract: EN61000-4-2 EN61000-4-3 Kycon KPj-4s-s AMM150 AMM120PS24 AMM150PS24C2 KPJX-4S-S KPJ-4S-S
Contextual Info: AC-DC 90-150 Watts xppower.com AMM Series • CEC2008 & EISA2007 Compliant • Worldwide Medical Approvals • Class I and Class II Versions • High Power Density • High Efficiency • Operating Temperature up to +60 °C • 3 Year Warranty Specification

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2482 ＴＯ－９２ＭＯＤ TRANSISTOR（ NPN ） 1.EMITTER FEATURE Power dissipation PCM : 0.9 W（Tamb=25℃） Collector current ICM : 0.1 A Collector-base voltage

MT4S300T

Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
Contextual Info: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones

2SC2482

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2482 TO-92MOD TRANSISTOR NPN FEATURE z High voltage :Vceo=300V z Small collector output capacitance: Cob=3.0pF(Typ) 1. EMITTER 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC2482 TO-92L TRANSISTOR NPN 1. EMITTER FEATURE z High Voltage :VCEO=300V z Small Collector Output Capacitance: Cob=3.0pF(Typ) 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SC2482

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC2482 TO-92L TRANSISTOR NPN FEATURE z High voltage :Vceo=300V z Small collector output capacitance: Cob=3.0pF(Typ) 1. EMITTER 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2482 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURE z High Voltage :Vceo=300V z Small Collector Output Capacitance: Cob=3.0pF(Typ) 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)