V10 DIODE Search Results

Kinetis CMSIS 2.10

Abstract: BD1020HFV
Contextual Info: CodeWarrior Development Studio for Microcontrollers V10.x FAQ Guide Document Number: CWMCUFAQ Rev 10.5, 09/2013 CodeWarrior Development Studio for Microcontrollers V10.x FAQ Guide, Rev. 10.5, 09/2013 2 Freescale Semiconductor, Inc. Contents Section number

Contextual Info: KILOVOLT Series 2000 Volt & 3000 Volt PIN Diodes MA4PK200X & MA4PK300X V10 Features • • • • • • • • Package Outlines Reverse Voltage up to 3000 Volts 25 Ampere Current Rating Designed for HF, Multi-Throw Kilowatt Switches Low Loss, Low Distortion

MA4ST2000

Abstract: MAVR-002200-11410T MAVR-002200-12790T MAVR-002300-11410T MAVR-002300-12790T MAVR-002400-12790T MAVR-002500-12790T MAVR-002600-12790T MA4ST2300 MAVR-002200-XXXXXX
Contextual Info: MA4ST2000 Series Ultra High Ratio Si Hyperabrupt Varactor Diode Rev. V10 Features • Ultra High Capacitance Ratio, • • • SC-70 3 lead SOD-323 C(0.1V)/C(4.7V) =18:1 C(0.1V)/C(2.7V) = 12:1 Surface Mount Plastic Packages: SC-79, SOD323, SC-70, 3 Lead

MA4P1250 PIN

Abstract: MA4P MA4P4006-1091T JC5W
Contextual Info: MA4P HIPAX High Power PIN Diodes V10 Package Styles Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Power Handling Low Loss / Low Distortion Voltage Ratings up to 1000 Volts Passivated Chip for Low Leakage Current Low Theta θ Due to Full Face Chip Bonding

VF-45

Abstract: 1000BASE-SX V23818-K305-V10 laser bar driver advantages of 1000base-sx
Contextual Info: V23818-K305-V10 Small Form Factor Multimode 850 nm 1.3 Gigabit Ethernet 2x5 Transceiver with VF-45 Volition Connector Preliminary Dimensions in (mm) inches (13.59) Max. .535 (10.16) .400 (13.97) Min .550 Pitch 9x (1.78) .070 (16) .630 -B (12) .472 (7.59)

731 zener diode

Abstract: FR 309 diode 217F diode zener c5 R27A
Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-5 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General

217F

Abstract: resistor film transistor MTBF L2 diode 725
Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-5 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General

SYLGARD

Contextual Info: Silicon PIN Chips RoHS Compliant V10 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Switch & Attenuator Die Extensive Selection of I-Region Lengths Hermetic Glass Passivated CERMACHIP Oxide Passivated Planar Chips Voltage Ratings to 3000V Fast Switching Speed

Contextual Info: Silicon PIN Chips RoHS Compliant V10 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Switch & Attenuator Die Extensive Selection of I-Region Lengths Hermetic Glass Passivated CERMACHIP Oxide Passivated Planar Chips Voltage Ratings to 3000V Fast Switching Speed

DIODE 4008

Abstract: "DIODE" 4008 217F capacitor Electrolytic zener3 optocupler 105 capacitor
Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-12 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General

SM 850nm laser

Contextual Info: V23818-K305-V10 SIEMENS Small Form Factor Multim ode 850 nm 1.3 Gigabit Ethernet 2x5 Transceiver with VF-45 Volition Connector Preliminary D im ension s in (m m) inches (13.59) Max. 535 (13.97) Min .550 Pitch (1.78) .070 (16) .630 ( 12 ) .472 2,0(1O7S>

VM313

Contextual Info: # a VTC.nc Value the Customer " V10-CHANNEL, M 3 1 3 HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1993 FEA TUR ES TWO/THREE TERMINAI 8 SERVO PREAMPLIFIERS • • • • • • • • • • • High Performance: - Read m ode gain = 150 V /V

Contextual Info: Bulletin E-26 Model V10 Flotect Mini-Size Flow Switch Specifications – Installation and Operating Instructions 4 [101.6] 2-7/8 [73.07] LOWER BODY 18 AWG LEAD WIRES 19˝ [482.6] LONG CABLE 1 [25.40] 2-7/8 [73.07] 7/8 HEX 1/4 [6.35] TRAVEL TO NORMALLY CLOSED

ECO-TOP

Abstract: DWLP55-12
Contextual Info: IGBT Module IC80 = VCES = VCE sat typ. = PSII 75/12* Preliminary Data Sheet S15 R15 A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 V3 ECO-TOPTM 1 V6 typical picture, for pin configuration see outline drawing IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK

Contextual Info: IGBT Module IC80 = VCES = VCE sat typ. = PSII 30/06* Short Circuit SOA Capability Square RBSOA 29 A 600 V 2.4 V Preliminary Data Sheet ECO-TOPTM 1 S15 R15 IGBTs A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 typical picture, for pin configuration see outline

842 ic

Abstract: D-68623 E72873 IC N10
Contextual Info: MWI 75-12 A5 IC25 = 90 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA W1 A10 B10 I 10 K10 R10 S10 F3 K3 P3 E10 F10 M10 N10 V10 W10 E 72873 A1 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C

diode T 3512

Abstract: D-68623 E72873 ds 35-12 e ixys MWI 35-12 A5
Contextual Info: MWI 35-12 A5 IC25 = 45 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA W1 A10 B10 I 10 K10 R10 S10 F3 K3 P3 E10 F10 M10 N10 V10 W10 E 72873 A1 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C

D-68623

Abstract: E72873
Contextual Info: MWI 50-12 A5 IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA W1 A10 B10 I 10 K10 R10 S10 F3 K3 P3 E10 F10 M10 N10 V10 W10 E 72873 A1 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C

Contextual Info: ECO-TOPTM 1 IGBT Module IC80 = VCES = VCE sat typ. = PSII 30/12* Short Circuit SOA Capability Square RBSOA 33 A 1200 V 3.1 V Preliminary Data Sheet ECO-TOPTM 1 S15 R15 IGBTs A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 Symbol Conditions VCES TVJ = 25°C to 150°C

TOKO CERAMIC FILTER 455

Abstract: TDA1083 TDA1083 am/fm circuit radio toko "variable capacitor" vogt l4 154AN vogt l7 STETTNER STETTNER SFE 5,5 A6363A0
Contextual Info: TDA1083 One Chip AM/FM Radio with Audio Power Amplifier Description The integrated circuit TDA1083 includes, with exception of the FM front end, a complete AM-/FM-radio-circuit with audio power amplifier. An internal Z-diode [ stabilizes the supply voltage at VS 13 V, which allows

TOKO CERAMIC FILTER 455

Abstract: TDA1083 vogt l9 vogt u8 154AN CY2-22124-RT02 AM-receiver circuit vogt l6 TOKO CERAMIC FILTER vogt
Contextual Info: TDA1083 One Chip AM/FM Radio with Audio Power Amplifier Description The integrated circuit TDA1083 includes, with exception of the FM front end, a complete AM-/FM-radio-circuit with audio power amplifier. An internal Z-diode stabilizes the supply voltage at VS [ 13 V, which allows

TOKO CERAMIC FILTER 455

Abstract: tda1083 SFE 10.7 MA SFE 10.7 MM CY2-22124-RT02 RHNS-1A7608AZP vogt l9 A6391ABM 154EES-7 toko 154an
Contextual Info: TDA1083 One Chip AM/FM Radio with Audio Power Amplifier Description The integrated circuit TDA1083 includes, with exception of the FM front end, a complete AM-/FM-radio-circuit with audio power amplifier. An internal Z-diode [ stabilizes the supply voltage at VS 13 V, which allows

70910

Abstract: transistor cny CNY17F-1X E91231
Contextual Info: ISOCOM COMPONENTS LTD HôfibSlO QQQOSSM 4 • ISO 45E D CNY 17F-1X, CNY 17F-2X, CNY 17F-3X, CNY 17F-4X is OPTICALLY COUPLED ISOLATOR NON-BASE LEAD TRANSISTOR OUTPUT DESCRIPTION The CNY 17 is a optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and a

CNY17F-1X

Abstract: CNY17F-2X E91231 cny 17 ISOCOM lot number transistor cny CNY 27-4
Contextual Info: ISOCOM CO MP O N E N T S LTD HôfibSlO QQ QOS SM 4 • ISO 45E D CNY 17F-1X, CNY 17F-2X, CNY 17F-3X, CNY 17F-4X is OPTICALLY COUPLED ISOLATOR NON-BASE LEAD TRANSISTOR OUTPUT DESCRIPTION The CNY 17 is a optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and a