V20W Search Results
V20W Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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V20W | Midé Technology | Vibration Sensors, Sensors, Transducers, PIEZOELECTRIC ENERGY HARVESTER | Original | 24 | |||
V20W60C-M3/I | Vishay Semiconductor Diodes Division | Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 20A 60V DPAK | Original | 126.5KB | |||
V20WL45-M3/I | Vishay Semiconductor Diodes Division | Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20A 45V DPAK | Original | 124.6KB | |||
V20WM100C-M3/I | Vishay Semiconductor Diodes Division | Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 20A 100V DPAK | Original | 125.84KB |
V20W Price and Stock
Vishay Semiconductors BAV20W-E3-08DIODE GEN PURP 150V 250MA SOD123 |
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BAV20W-E3-08 | Cut Tape | 17,191 | 1 |
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Vishay Semiconductors BAV20W-G3-08DIODE STANDARD 150V 250MA SOD123 |
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BAV20W-G3-08 | Digi-Reel | 14,589 | 1 |
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PanJit Group BAV20W_R1_00001DIODE STANDARD 150V 200MA SOD123 |
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BAV20W_R1_00001 | Reel | 12,000 | 3,000 |
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Micro Commercial Components BAV20WHE3-TPDIODE GEN PURP 150V 250MA SOD123 |
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BAV20WHE3-TP | Cut Tape | 11,980 | 1 |
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BAV20WHE3-TP | 114,525 |
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Vishay Semiconductors BAV20WS-E3-18DIODE STANDARD 150V 250MA SOD323 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BAV20WS-E3-18 | Reel | 10,000 | 10,000 |
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V20W Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: V20WM100C-M3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-252 D-PAK • Ideal for automated placement • Low forward voltage drop, low power losses |
Original |
V20WM100C-M3 O-252 J-STD-020, V20WM100C 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: V20W60C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses |
Original |
V20W60C O-252 J-STD-020, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
BAV21
Abstract: BAV20 J BAV21 0822006 BAV20W BAV21W
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OCR Scan |
BAV20 BAV21 BAV20W BAV21W) DO-35, MIL-STD-202, DO-35 BAV21 J BAV21 0822006 BAV21W | |
Contextual Info: V20W60C-M3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-252 D-PAK • Ideal for automated placement • Low forward voltage drop, low power losses |
Original |
V20W60C-M3 O-252 J-STD-020, V20W60C 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: V20WL45-M3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-252 D-PAK • Ideal for automated placement • Low forward voltage drop, low power losses |
Original |
V20WL45-M3 O-252 J-STD-020, V20WL45 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
V20WM100CContextual Info: V20WM100C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses |
Original |
V20WM100C O-252 J-STD-020, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 V20WM100C | |
Contextual Info: V20WL45 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses |
Original |
V20WL45 O-252 J-STD-020, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
V20w
Abstract: goc1
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OCR Scan |
BAV20 BAV21 BAV21W DO-35 IL-STD-202, BAV21 DS22006 V20w goc1 | |
piezo DMT-1206-IContextual Info: EHE004 ENERGY HARVESTING ELECTRONICS FEATURES DESCRIPTION Simple and Easy Charge Management for Vibration Energy Harvesting Integrates directly with all Volture Energy Harvesters Parallel or Series Piezoelectric Connection – Improved Efficiency User Selectable DC Output |
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EHE004 EHE004 setting19D CBC3225T100MR C1206C476M9PACTU 100nF C1608Y5V1E104Z 100uF T491X107K025ZT piezo DMT-1206-I | |
Contextual Info: PIEZOELECTRIC ENERGY HARVESTERS FEATURES DESCRIPTION Enables Vibration Energy Harvesting Robust Piezo Packaging Pre-Attached Electrical Lead Wires and Connector Hermetically Sealed for Use in Harsh Environments Low Profile Available in Different Sizes to Match to Application |
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LTC3588 100uH. 100uH 350mA. LTC3588-1 | |
"piezoelectric generator"
Abstract: pfcb-w14 thermoelectric generator PFCB-W24 mppt circuit microcontroller V21BL PFCB-W54 photovoltaic transducer Low Battery Cutoff Solar mppt circuit design
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CBC-EVAL-09 CBC-EVAL-09 CBC915-ACA CBC51100 100uAh EVAL-09 CBC51100 DS-72-13 "piezoelectric generator" pfcb-w14 thermoelectric generator PFCB-W24 mppt circuit microcontroller V21BL PFCB-W54 photovoltaic transducer Low Battery Cutoff Solar mppt circuit design | |
V20WM100C-M3/IContextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . DIODES Diodes – TO-252 DPAK Package for Commercial Applications TMBS Rectifiers 45 V, 60 V, and 100 V TMBS® Rectifiers with Current Ratings from 6 A to 20 A Key Benefits • Current ratings from 6 A to 20 A |
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O-252 V6W60C-M3/I V12W60C-M3/I V15W60C-M3/I V20W60C-M3/I V6WM100C-M3/I V10WM100-M3/I V12WM100C-M3/I V20WM100C-M3/I V20WM100C-M3/I | |
PFCB-W14Contextual Info: CBC-EVAL-09 EnerChip EP Universal Energy Harvester Eval Kit Features CBC-EVAL-09 is a universal energy harvesting EH evaluation kit that combines any one of multiple EH transducers with the EnerChipTM EP CBC915 Energy Processor and the EnerChip CBC51100 100uAh solid state battery |
Original |
CBC-EVAL-09 CBC-EVAL-09 CBC915 CBC51100 100uAh EVAL-09 CBC51100 DS-72-13 PFCB-W14 | |
Contextual Info: PIEZOELECTRIC ENERGY HARVESTERS FEATURES DESCRIPTION Enables Vibration Energy Harvesting Robust Piezo Packaging Pre-Attached Electrical Lead Wires and Connector Hermetically Sealed for Use in Harsh Environments Low Profile Available in Different Sizes to Match to Application |
Original |
LTC3588 100uH. 100uH 350mA. LTC3588-1 | |
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Contextual Info: CBC-EVAL-09 EnerChip EP Universal Energy Harvester Eval Kit Features CBC-EVAL-09 is a universal energy harvesting EH evaluation kit that combines any one of multiple EH transducers with the EnerChipTM EP CBC915 Energy Processor and the EnerChip CBC51100 100uAh solid state battery |
Original |
CBC-EVAL-09 CBC-EVAL-09 CBC915 CBC51100 100uAh EVAL-09 CBC51100 DS-72-13 | |
V21BL
Abstract: piezo wafer V25W LTC3588-1 vibration Energy Harvester piezoelectric film sensor V22BL V20w Micro Piezoelectric Pump BAV199
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LTC3588 100uH. 100uH 350mA. LTC3588-1 V21BL piezo wafer V25W LTC3588-1 vibration Energy Harvester piezoelectric film sensor V22BL V20w Micro Piezoelectric Pump BAV199 | |
piezo DMT-1206-IContextual Info: EHE004 ENERGY HARVESTING ELECTRONICS FEATURES DESCRIPTION Simple and Easy Charge Management for Vibration Energy Harvesting Integrates directly with all Volture Energy Harvesters Parallel or Series Piezoelectric Connection – Improved Efficiency User Selectable DC Output |
Original |
EHE004 EHE004 setting19D CBC3225T100MR C1206C476M9PACTU 100nF C1608Y5V1E104Z 100uF T491X107K025ZT piezo DMT-1206-I | |
PFCB-W14
Abstract: CBC51100 PFCB-W24 PFCB-W54 mppt circuit microcontroller piezoelectric generator "piezoelectric generator" thermoelectric generator v21bl MPG-D651
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Original |
CBC-EVAL-09 CBC-EVAL-09 CBC915-ACA CBC51100 100uAh EVAL-09 DS-72-13 PFCB-W14 PFCB-W24 PFCB-W54 mppt circuit microcontroller piezoelectric generator "piezoelectric generator" thermoelectric generator v21bl MPG-D651 | |
Selector Guide
Abstract: gl112 VS-20ETS08F SS10P2CL
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VMN-SG2125-1407 DISC9337-2726 Selector Guide gl112 VS-20ETS08F SS10P2CL |