VA32 Search Results

VA32A

Contextual Info: 32 Lead Molded Plastic Leaded Chip Carrier NS Package Number VA32A All dimensions are in inches millimeters LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL

VA32A

Contextual Info: Package Outlines 32 Lead Molded Plastic Leaded Chip Carrier Package Number VA32A A 1 0.01510.38] S': C | 0-E.F-G 'S i| “ ,L 0.027-0.033 10.69-0.S4] Section B-B Typical All dim ensions are in inches (millimeters unless otherwise noted 709 www.fairchfldsemi.com

ak23 diode

Abstract: surge protection mtbf AK23 EC28 EN61000-4-2 EN61000-4-3 EN61000-4-4 EN61000-4-5 MR05 MR24
Contextual Info: 78 STANDARD DC/DC CONVERTERS MR series 20 to 144 watts Features • Non-isolated DC/DC Converters • Wide Input Range • Environmentally Sealed Input Characteristics Ideally Suited For: Input Voltage: • Transportation • Computing • Instrumentation

va32

Abstract: A115-A C101 SN74ALVC32 SN74ALVC32D
Contextual Info: SN74ALVC32 QUADRUPLE 2ĆINPUT POSITIVEĆOR GATE SCES108F − JULY 1997 − REVISED AUGUST 2003 D D D D D D, DGV, NS, OR PW PACKAGE TOP VIEW Operates From 1.65 V to 3.6 V Max tpd of 2.8 ns at 3.3 V ±24-mA Output Drive at 3.3 V Latch-Up Performance Exceeds 250 mA Per

27C010

Abstract: 27C040 27C256 FM27C512 FM27C512Q
Contextual Info: FM27C512 524,288-Bit 64K x 8 High Performance CMOS EPROM General Description The FM27C512 is one member of a high density EPROM Family which range in densities up to 4 Megabit. The FM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG EPROM technology for an excellent combination of speed and economy while

Contextual Info: Decem ber 1994 Semiconductor NM27LV010B 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description Features The N M 27LV010B is a high performance Low Voltage Elec­ trically Programmable Read Only Memory. It is manufac­ tured using National’s latest 0 .8 ju, C M O S split gate A M G

27C512 National Semiconductor

Abstract: 27C010 27C040 27C080 27C256 27C512 C1996 NM27C020 NM27C020Q
Contextual Info: June 1995 NM27C020 2 097 152-Bit 256K x 8 UV Erasable CMOS EPROM General Description The NM27C020 is a high performance 2 097 152-bit EPROM It is organized as 256 K-words of 8 bits each Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs The ‘‘Don’t Care’’ feature during read operations enables memory expansions up

M27C040

Abstract: 27C040Q
Contextual Info: NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM 27C040 is a high performance, 4,194,304-bit Electrically Program mable UV Erasable Read O nly Memory. It is organized as 512K w ords of 8 bits each. Its pin-com patibility with byte-wide

6755w

Contextual Info: Ju ly 1998 s e m ic o n d u c t o r FM27LV512L 524,288-Bit 64Kx8 Low Voltage, Low Power EPROM General Description • Programming Voltage +12.75V ■ Typical programming time 50|is The FM27LV512 is a low voltage, low-power 512Kbit, 3.3V-only one-time-programmable (OTP) read-only memory (EPROM), or­

27C010X

Contextual Info: M IC O N D U C T D R Ju ly 1998 tm FM27C040 4,194,304-Bit 512K x 8 High Speed CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Program mable R e a d o n ly Memory. It is organized as 512K w ords of 8 bits each. Its pin-com patibility with byte-wide JEDEC EPROMs

TI 27c010

Contextual Info: A p ril 1 9 9 8 S E M I C O N D U C T O R TM 1,048, 576-Bi t 128K FM27C010L 1,048,576-Bit (128Kx8 Low Power Fast EPROM • Programming V o lta g e +12.75V General Description ■ Typical programm ing time 50|is The F M 2 7 C 0 1 0 isa low -p o w e r1 Mbit, 5V-only on e-tim e-prog ram m able (OTP) read-only m em ory (EPROM), organized into 128K

M27G512

Abstract: 27G512
Contextual Info: January 1998 S E M IC O N D U C T O R FM27C512-L 524,288-Bit 64K x 8 Low Power Fast EPROM General Description The FM27C512 is a low-power 512Kbit, 5V-only one-timeprogrammable (OTP) read-only memory (EPROM), orga­ nized into 64K words with 8 bits per word. Any byte can be

National Controls ne 545

Abstract: 27C010 27C040 27C080 27C256 27C512 NM27C020 eprom connection NM27C020N fairchild eprom
Contextual Info: NM27C020 2,097,152-Bit 256K x 8 UV Erasable CMOS EPROM General Description Features The NM27C020 is a high speed 2 Megabit CMOS UV-EPROM manufactured on Fairchild’s advanced sub-micron technology. Utilizing the AMG architecture, this advanced CMOS process

A115-A

Abstract: C101 SN74ALVC32 SN74ALVC32D
Contextual Info: SN74ALVC32 QUADRUPLE 2-INPUT POSITIVE-OR GATE www.ti.com SCES108G – JULY 1997 – REVISED NOVEMBER 2004 FEATURES • • • • • D, DGV, NS, OR PW PACKAGE TOP VIEW Operates From 1.65 V to 3.6 V Max tpd of 2.8 ns at 3.3 V ±24-mA Output Drive at 3.3 V

27C512N

Contextual Info: I R C H I L D April 1998 S E M I C O N D U C T O R TM 524,288-Bit 64K FM27C512L 524,288-Bit (64Kx8 Low Power Fast EPROM • Programming V o lta g e +12.75V General Description ■ Typical programm ing time 50|is The FM27C512 is a low -pow er 512Kbit, 5V-only one-tim e-program m able (OTP) read-only m em ory (EPROM), organized into

Contextual Info: Ju ly 1998 M IC O N D U C T D R tm FM27C010L 1,048,576-Bit 128Kx8 Low Power Fast EPROM General Description • Programming Voltage +12.75V ■ Typical programm ing tim e 50|is The FM 27C010 is a lo w -po w e r 1 Mbit, 5V-only one-tim e-program m able (OTP) read-only m em ory (EPROM), organized into 128K

C1995

Abstract: J32AQ NM27C040 VA32A
Contextual Info: NM27C040 4 194 304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance 4 194 304-bit Electrically Programmable UV Erasable Read Only Memory It is organized as 512K words of 8 bits each Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through

NM27C010

Contextual Info: General Description The NM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The “Don’t Care” feature during read operations allows memory expansions from 1M to 8M bits with

A115-A

Abstract: C101 SN74ALVC32 SN74ALVC32D VA32
Contextual Info: SN74ALVC32 QUADRUPLE 2-INPUT POSITIVE-OR GATE www.ti.com SCES108G – JULY 1997 – REVISED NOVEMBER 2004 FEATURES • • • • • D, DGV, NS, OR PW PACKAGE TOP VIEW Operates From 1.65 V to 3.6 V Max tpd of 2.8 ns at 3.3 V ±24-mA Output Drive at 3.3 V

27C020

Abstract: 27c256 Ram pinout diagram National Controls ne 545 ve200 27C040 27C080 27C128 27C256 27C512 NM27C128
Contextual Info: tm NM27C12Ô 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM 27C128 is one m em ber of a high density EPROM Family which range in densities up to 4 Mb. The NM 27C128 is a high performance 128K UV Erasable Electri­ cally Program mable Read Only Memory. It is m anufactured with

1N914

Abstract: A14C N28B NM27C512 VA32A
Contextual Info: Ju ly 1998 S E M IC O N D U C TD R tm FM27LV512L 524,288-Bit 64Kx8 Low Voltage, Low Power EPROM General Description • Program ming Voltage +12.75V ■ Typical programm ing tim e 50ns The FM27LV512 is a low voltage, low-power 512Kbit, 3.3V-only one-tim e-program m able (OTP) read-only memory (EPROM), or­

NM27C010

Abstract: NM27LV010 PTFC
Contextual Info: NM27LV010 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description The NM27LV010 is a high performance Low Voltage Electri­ cally Programmable Read Only Memory. It is manufactured using National's latest 1.2/x CMOS split gate SVG EPROM technology. This technology allows the part to operate at

NM27C256

Abstract: 27C080 27C010 27C020 27C040 27C256 27C512 C1995
Contextual Info: NM27C256 262 144-Bit 32K x 8 High Performance CMOS EPROM General Description The NM27C256 is a 256K Electrically Programmable Read Only Memory It is manufactured in National’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as 120 ns access time over the full operating

27C080

Abstract: 27C010 27C020 27C040 27C256 C1995 NM27P512 27C256 DIP
Contextual Info: NM27P512 524 288-Bit 64K x 8 Processor Oriented CMOS EPROM General Description Features The NM27P512 is a 512K Processor Oriented EPROM configured as 64k x 8 It’s designed to simplify microprocessor interfacing while remaining compatible with standard