VBE 10V, ICE 4A Search Results

NPN POWER TRANSISTOR 2SD1878

Abstract: 2SD1878 EQUIVALENT 2SD1878
Contextual Info: 2SD1878 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA

2sd1911

Contextual Info: Silicon Diffused Power Transistor 2SD1911 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA

2SD2498

Contextual Info: Silicon Diffused Power Transistor 2SD2498 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic package,primarily for use in switching power circuites of colour television receivers QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM

2SD870

Abstract: 2sd870 transistor transistor 2sd870
Contextual Info: SILICON DIFFUSED POWER TRANSISTOR 2SD870 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers TO-3 QUICK REFERENCE DATA

2sd1878

Abstract: 2SD1878 EQUIVALENT NPN POWER TRANSISTOR 2SD1878 2SD1878 Transistor data transistor 2sd1878
Contextual Info: 2SD1878 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA

100V 60A Diode

Abstract: 2SD1886 vbe 10v, Ice 4A
Contextual Info: 2SD1886 SILICON DIFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope ,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL VCESM VCEO

TRANSISTOR 2SD1879

Abstract: 2SD1879 2SD187
Contextual Info: 2SD1879 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode , primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA

2SD1911

Abstract: 40af
Contextual Info: Silicon Diffused Power Transistor 2SD1911 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA

TRANSISTOR 2SD1879

Abstract: 2SD1879
Contextual Info: 2SD1879 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode , primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA

transistor 2sd2499

Abstract: 2SD2499 08af 2SD2499 equivalent
Contextual Info: 2SD2499 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers TO-3PM

bu126

Abstract: Switched Mode Power Supply
Contextual Info: TOSHIBA {DISCRETE/OPTO} ~5h D E ^ I D ^ a S O 000flCH3 WÊÊÊÊÊÊÊÊÊÊÊtÊÊÊÊIÊÊÊÊÊ 9097250 TOSHIBA bbC 08093 CDISCRETE/OPTO 0 ^ 2 3 -// BU126 SILICON NPN TRIPLE DIFFUSED MESA TYPE HIGH VOLTAGE NPN SILICON POWER TRANSISTOR' INTENDED Unit in mm

Contextual Info: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1048 ISSUE 2 - FEBRUARY 1996 1.i. Cl f i cf r r c2c q Cl in Bi Ei nu b 2 UT1 Ë2 PARTMARKING DETAIL - T1048 ABSOLUTE MAXIMUM RATINGS, PA RA M ETER SYM BO L C o lle cto r-B a se V o ltag e VcBO VALUE UNIT

260TC

Abstract: KSE3055T
Contextual Info: NPN SILICON TRANSISTOR KSE3055T GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES TO-220 High Current Gain-Bandwidth Product fr = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emltter Voltage

Contextual Info: DZT953 N EW PRODU CT PNP SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DZT853 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications

4A SOT223 MARKING CODE

Abstract: NPN 1A 100V SOT-223
Contextual Info: NOT RECOMMENDED FOR NEW DESIGN USE ZXTP2013G DZT953 NEW PRODUCT PNP SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DZT853 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications

DZT853

Abstract: DZT953 IPC-SM-782
Contextual Info: SPICE MODELS: DZT853 DZT853 NEW PRODUCT NPN SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available DZT953 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications

DZT853

Abstract: DZT953 IPC-SM-782
Contextual Info: DZT853 NEW PRODUCT NPN SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available DZT953 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications

Contextual Info: SPICE MODELS: DZT853 DZT853 NEW PRODUCT NPN SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available DZT953 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications

4A SOT223 MARKING CODE

Abstract: DZT953 NPN 1A 100V SOT-223
Contextual Info: DZT953 NEW PRODUCT PNP SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DZT853 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications

DZT953

Abstract: marking code IC 4A DZT853 DZT953-13 marking codes IC sot-223
Contextual Info: SPICE MODELS: DZT953 DZT953 NEW PRODUCT PNP SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DZT853 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications

ZTX853

Abstract: C 3298 TRANSISTOR
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3- NOVEMBER H 1995 FEATURES 100volt VCE , * * 4 Amps * Up to 10 Amps + * Very continuous low Pt[ t=l.2 current peak current saturation voltage Watts E-Line 1092 Compatible ABSOLUTE MAXIMUM RATINGS.

C45H5

Abstract: C44H11 C44H C44H8 C45H C45H11 C45H8
Contextual Info: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON EPITAXIAL POWER TRANSISTORS C44H 5, 8, 11 NPN C45H 5, 8, 11 (PNP) TO - 220 Plastic Package Application General purpose power amplification & switching such as output or driver stages

C44H11

Abstract: C45H5 C45H8 C44H8 C44H C45H C45H11
Contextual Info: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON EPITAXIAL POWER TRANSISTORS C44H 5, 8, 11 NPN C45H 5, 8, 11 (PNP) TO - 220 Application General purpose power amplification & switching such as output or driver

FZT948

Abstract: FZT949 DSA003718
Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 2- NOVEMBER m 1995 FEATURES * Extremely low equivalent * 6 Amps continuous current on-resistance; RCE{W) * Up to 20 Amps peak current * Very low saturation voltage * Excellent hFEcharacteristics specified upto 20 Amps