VBE 40 TRANSISTOR Search Results

STA5050

Abstract: STA3878 2n389 2N3054 2N3441 STA3879 STC40250 STC40310 STC40312 STC40324
Contextual Info: Silicon power transistors NPN TO-66 = 1.0 to 7.0 A Type# 2N3054 STC40250 STC40310 STC40312 STC40316 STC40324 Typical Values VcEOISUS Volts) 55 40 35 60(Vcer) 40(Vcer) 35 @ Ic/VcE (Min-Max @ A/V) Vbe @ Ic/VcE (V @ A/V) VcE(SAT) @ Ic/ I b (V @ A/A) fT = 0.75 to 60 MHz

mmbta12

Contextual Info: zn i\ micanductor NATL Surface Mount Transistors Type No. Case Style MMBT6426 VcbO VcEO V ebo V Min Min (V) Min TO-236 (49) 40 40 MMBTA12 TO-236 (49) MMBTA13 MMBTA14 •ces * 'CBO @ VCB @lc 4V hFE ce VCE(SAT) VBE(sa T) Max (V) Min Max <v) 1 1 C0b (PF) Max

Contextual Info: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) • 40-425V PNP Power Transistors NPN Typ. No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 coinplMMnl 2N3766 2N3767 2N4910 2N4911 2N4912 (A) VCE(SAT) 0IC/IB (V0A/A) VBE IOVCE

TN2218A

Abstract: CN100A CN100B CSC2330 CSC2330R CSC2330Y CSC2331 CSC2331R CSC2331Y VC80
Contextual Info: TO-237 Plastic Package Transistors NPN M axim um R a tin gs Type No. Electrical C haracte ristics (Ta=25°C, U n le ss Otherw ise Specified) Ic & ^CE (mA) (V) ^CE(SAT] VBE(SAT) 3 (mA) (V) & (V) Max Min Max @ toff) (ns) Max COIL Case Style (V) 1 0.05 40 40

Contextual Info: Saturated Switching Transistors Part No. Polarity VCEO V Bipolar Transistors hFE @ VCE & IC Min. Max. VCE(sat) & VBE(sat) @ IC & IB VCE IC (V) t(off) Pins Package (mA) (ns) 123 Bulk/Reel Max. (V) IC IB (mA) Max. (V) (mA) PN2369A NPN 15 40 120 1.0 10 0.20

Contextual Info: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5

2n511

Abstract: 2N511A Texas Germanium 2N511B Germanium Transistor 2n511 transistor 9012 transistor power germanium transistor pnp Germanium power
Contextual Info: TYPES 2N511, 2N511A, AND 2N511B P-N-P ALLOY-JUNCTION GERMANIUM HI6H-P0WER TRANSISTORS 40, 60 or 80 V01TS 10-A M P COLLECTOR CURRENT 150 -W ATT DISSIPATION lO W Ijo LOW VBE LOW THERMAL RESISTANCE for HIGH-POWER CONVERSION • HIGH-CURRENT SWITCHING AUDIO AMPLIFIER OUTPUT STAGES

2N2067

Abstract: 2N1184B 2n1755 2N301 2N1533 2N176 2N2068 germanium transistors NPN 2N1183 2N1184A
Contextual Info: germanium power transistors PNP TO-8 lc M A X — hFE @ Ic / V c E Type# 2N1183 2N1183A 2N1183B 2N1184 2N1184A 2N1184B V c e o is u s ) (Volts) 20 30 40 20 30 40 V ebo (Volts) (Min-Max @ A/V) Vbe V c E lS A T J @ Ic / Ib (V (S> A/A) 20 20 20 20 20 20 @ Ic/VcE

ZTX300

Abstract: a1507 DSA003764
Contextual Info: NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ZTX300 ZTX300 ISSUE 2 – MARCH 94 TYPICAL CHARACTERISTICS 0.95 0.25 0.90 0.20 VCE sat - (Volts) VBE(sat) - (Volts) IC/IB=30 IC/IB=10 0.85 IC/IB=30 0.80 0.75 C B 0.15 IC/IB=10 0.70 10 20 30 40 50 60 ABSOLUTE MAXIMUM RATINGS.

KSC1330

Abstract: KSC839 vef 202 KSC2884 KSA1202
Contextual Info: TRANSISTORS FUNCTION GUIDE TO-92 Type Transistors Continued Device and Polarity NPN PNP KSP6602 Condition VcEO lc (V) (A) 1 40 hFE VCE (V) lc (A) MIN 1 500 50 Condition MAX VCE(sat), VBE(sat)(V) lc (mA) ^0 (mA) MAX MAX 1000 100 0.6 1.2 Condition fT(MHz)

h06A

Abstract: MAT01AH MAT01 MAT01GH MAT01N "Dual npn Transistor" MAT-01AH
Contextual Info: a FEATURES Low VOS VBE Match : 40 ␮V typ, 100 ␮V max Low TCVOS: 0.5 ␮V/؇C max High hFE: 500 min Excellent h FE Linearity from 10 nA to 10 mA Low Noise Voltage: 0.23 ␮V p-p—0.1 Hz to 10 Hz High Breakdown: 45 V min Matched Monolithic Dual Transistor

MAT01

Abstract: MAT01AH MAT01GH MAT01N
Contextual Info: a FEATURES Low VOS VBE Match : 40 ␮V typ, 100 ␮V max Low TCVOS: 0.5 ␮V/؇C max High hFE: 500 min Excellent h FE Linearity from 10 nA to 10 mA Low Noise Voltage: 0.23 ␮V p-p—0.1 Hz to 10 Hz High Breakdown: 45 V min Matched Monolithic Dual Transistor

ZTX500

Abstract: ztx500 equivalent DSA003767
Contextual Info: ZTX500 PNP SILICON PLANAR SMALL SIGNAL TRANSISTOR ZTX500 ISSUE 1 – MARCH 94 0.95 0.25 0.90 0.20 0.85 IC/IB=10 0.80 IC/IB=30 VCE sat - (Volts) VBE(sat) - (Volts) TYPICAL CHARACTERISTICS C B 0.15 0.05 0.70 10 30 40 50 60 ABSOLUTE MAXIMUM RATINGS. 10 20 IC - Collector Current (mA)

MAT01AH

Contextual Info: Matched Monolithic Dual Transistor MAT01 Data Sheet PIN CONNECTION DIAGRAM Low VOS VBE match : 40 µV typical, 100 µV maximum Low TCVOS: 0.5 µV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 µV p-p from 0.1 Hz to 10 Hz

2SC5249

Abstract: FM20
Contextual Info: 2SC5249 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor A IB 1.5 PC 35(Tc=25°C) Tj Tstg µA 600min V hFE VCE=4V, IC=1A 20 to 40 A VCE(sat) IC=1A, IB=0.2A 0.5max W VBE(sat) IC=1A, IB=0.2A 1.2max V 150 °C fT VCE=12V, IE=–0.3A

2SC5249

Abstract: FM20 NPN Transistor 600V 0,2A vbe 12v, vce 600v NPN Transistor
Contextual Info: 2SC5249 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor A IB 1.5 PC 35(Tc=25°C) Tj Tstg µA 600min V hFE VCE=4V, IC=1A 20 to 40 A VCE(sat) IC=1A, IB=0.2A 0.5max W VBE(sat) IC=1A, IB=0.2A 1.2max V 150 °C fT VCE=12V, IE=–0.3A

b063

Abstract: Concord Electronics DDG0133 Pirgo Electronics
Contextual Info: nnA ^ 5 9 2 A P T :A P I ELECTRONICS INC ELECTRONICS 13A0133 INC POWER TRANSISTOR ENGINEERING BULLETIN 1 AMP PNP T O -5 100V at 100mA ICEX lOOfiA max at VB E off =1.5V, V CE=100V ICBO 100p,A at 100V XEBO 0.5mA at 7V HPE • <40 min at Ic=100mA, V CE=1V vBE(sat)

2SC5370

Abstract: FM20
Contextual Info: 2SC5370 Silicon NPN Epitaxial Planar Transistor 40 V IEBO VEBO 7 V V BR CEO IC 12 A Ratings Unit VCB=60V 10max µA Conditions VEB=7V 10max µA IC=25mA 40min V hFE VCE=2V, IC=6A 70min∗ IB 3 A VCE(sat) IC=6A, IB=0.3A 0.3max PC 30(Tc=25°C) W VBE(sat) IC=6A, IB=0.3A

"Dual npn Transistor"

Abstract: MAT01 8c 617 transistor high gain low voltage NPN transistor MAT01AH MAT01GH MAT01N
Contextual Info: a FEATURES Low VOS VBE Match : 40 ␮V typ, 100 ␮V max Low TCVOS: 0.5 ␮V/؇C max High hFE: 500 min Excellent h FE Linearity from 10 nA to 10 mA Low Noise Voltage: 0.23 ␮V p-p—0.1 Hz to 10 Hz High Breakdown: 45 V min Available in Die Form Matched Monolithic

2N3055

Abstract: 2n3773 power Amplifier 2N3442 2N1487 2N1488 2N1489 2N1490 2N3232 2N3235 STC40251
Contextual Info: Silicon power transistors IlFE @ Ic/VCE Type# IS/b Vce sat ] @ Ic / I b VcEO|SUS| (Volts (Min-Max @ A/V) (V @ A/A) Vbe @ Ic:/V cf (V @ A/V) ICEV @ Vce (mA @ V) @ Vce Pd @ t — 11sec Tc = 25°C 0 J C (Watts) (°C/W) (A @ V) tO N fi (MHz) 2N1487 40 15-45@1.5/4

Contextual Info: General Transistor Corporation CASE le max ss TO-61 5 to 20A Vceo(sus) = 40-300V NPN Power Transistors VBE(SAT) 0IC/1B (V & A/V) ICEV0VCE (mA V) PO® TC = 25*C (W.M) Wt>®VCE I I I wc (A ®V) Ir (MHz) ton & W B (ju ® A/A) tOFF @IC/1B (p»®AfA) 1 @ 21.2

2SC5370

Abstract: FM20 2402 transistor
Contextual Info: 2SC5370 Silicon NPN Epitaxial Planar Transistor 40 V IEBO VEBO 7 V V BR CEO IC 12 A 2SC5370 Unit VCB=60V 10max µA Conditions VEB=7V 10max µA IC=25mA 40min V hFE VCE=2V, IC=6A 70min∗ IB 3 A VCE(sat) IC=6A, IB=0.3A 0.3max PC 30(Tc=25°C) W VBE(sat) IC=6A, IB=0.3A

MAT01AH

Abstract: 8c 617 transistor MAT01 MAT01GH MAT01N
Contextual Info: a FEATURES Low VOS VBE Match : 40 ␮V typ, 100 ␮V max Low TCVOS: 0.5 ␮V/؇C max High hFE: 500 min Excellent h FE Linearity from 10 nA to 10 mA Low Noise Voltage: 0.23 ␮V p-p—0.1 Hz to 10 Hz High Breakdown: 45 V min Available in Die Form Matched Monolithic

pnp 900v

Abstract: SRSP5014 L3045 2N5415 2N1480 2N1481 2N1482 2N2911 2N5784 2N5786
Contextual Info: Silicon power transistors NPN TO-5 = 1.0 to 3.5A fT = 1.0 to 40 MHz V ce o is u s = 4 0 to 9 0 0 V I if e Type# PNP Comple­ VcEO SUS) ment (Volts) @ Ic/VcE (Min-Max @ A /V ) VcE(SAT) @ Ic / I b (V @ A/A) Vbe @ Ic/VcE (V @ A/V) Pd @ ( lie Cob fr Te = 25°C