Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    VBE MULTIPLIER Search Results

    VBE MULTIPLIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74167N-ROCS Rochester Electronics 74167 - Sync Decade Rate Multipliers Visit Rochester Electronics Buy
    HI4-0201/B Rochester Electronics LLC HI4-0201 - Differential Multiplier Visit Rochester Electronics LLC Buy
    HI4-0516-8/B Rochester Electronics LLC HI4-0516 - Differential Multiplier Visit Rochester Electronics LLC Buy
    25S558DM Rochester Electronics LLC AM25S558 - 8-Bit Combinational Multiplier Visit Rochester Electronics LLC Buy
    5480FM Rochester Electronics LLC 5480 - Multiplier, TTL, CDFP14 Visit Rochester Electronics LLC Buy

    VBE MULTIPLIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE311

    Abstract: No abstract text available
    Text: NTE311 Silicon NPN Transistor Frequency Multiplier, Driver, VHF/UHF Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collectore–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55V


    Original     		PDF NTE311 400mA 100mA, 20mAQ 200MHz 400MHz NTE311

    2N3866

    Abstract: Transistor 2N3866 2N3866 application note 200mhz 1w data 2n3866 ic 400ma, npn transistor voltage multiplier ic common emitter amplifier 2N3866 application 50 ohm 1w
    Text: 2N3866 2N3866 Silicon NPN Transistor Frequency Multiplier and Driver in VHF/UHF Transmitters C B E WINTransceiver Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO 30V 55V Collector-Base Voltage, VCBO 3.5V Emitter-Base Voltage, VEBO 400mA Continuous Collector Current, IC


    Original     		PDF 2N3866 400mA 20html 20needs 20conversion/2n3866/2N3866 100mA, 200MHz 400MHz 2N3866 Transistor 2N3866 2N3866 application note 200mhz 1w data 2n3866 ic 400ma, npn transistor voltage multiplier ic common emitter amplifier 2N3866 application 50 ohm 1w

    Gilbert Cell

    Abstract: No abstract text available
    Text: MT-079 TUTORIAL Analog Multipliers ANALOG MULTIPLIER BASICS An analog multiplier is a device having two input ports and an output port. The signal at the output is the product of the two input signals. If both input and output signals are voltages, the transfer characteristic is the product of the two voltages divided by a scaling factor, K, which has


    Original     		PDF MT-079 ISBN-10: ISBN-13: Gilbert Cell

    PN918

    Abstract: MMBT918 mark 3b RF TRANSISTOR SOT23 5 P431 PN918 transistor
    Text: MMBT918 PN918 C E C B TO-92 SOT-23 E B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings* Symbol


    Original     		PDF MMBT918 PN918 OT-23 PN918 MMBT918 mark 3b RF TRANSISTOR SOT23 5 P431 PN918 transistor

    Untitled

    Abstract: No abstract text available
    Text: NTE346 Silicon NPN Transistor RF Power Transistor Description: The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver


    Original     		PDF NTE346 NTE346 500MHz 50mAdc 12Vdc 175MHz 100mW,

    NTE346

    Abstract: npn 1W 40V to39
    Text: NTE346 Silicon NPN Transistor RF Power Transistor Description: The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver


    Original     		PDF NTE346 NTE346 500MHz 50mAdc 12Vdc 175MHz 100mW, npn 1W 40V to39

    UPA101G

    Abstract: UPA101G-E1
    Text: UPA101G TRANSISTOR ARRAY FEATURES CONNECTION DIAGRAM Top View • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: (9 GHz Single Transistors) • OUTSTANDING hFE LINEARITY • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE UPA101G 8 6 7 Q2 Q1 Q3 Q5 1


    Original     		PDF UPA101G UPA10 UPA101G-E1 2500/REEL 24-Hour UPA101G UPA101G-E1

    kf 8715

    Abstract: 900mhz frequency generator Ic 9430 UPA101 transistors equivalent 9012 5GHz band pass filter 500E H3101B HFA3101B HFA3101B96
    Text: HFA3101 Data Sheet September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		PDF HFA3101 HFA3101 10GHz) 10GHz kf 8715 900mhz frequency generator Ic 9430 UPA101 transistors equivalent 9012 5GHz band pass filter 500E H3101B HFA3101B HFA3101B96

    Harris HFA3101 5 GHz Gilbert cell array

    Abstract: Array chip resistors fiber optic FM Modulator FM Modulator 2GHz 500E 800E H3101B HFA3101 reactance modulator HFA3101B96
    Text: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array August 1996 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI


    Original     		PDF HFA3101 10GHz HFA3101 10GHz) Harris HFA3101 5 GHz Gilbert cell array Array chip resistors fiber optic FM Modulator FM Modulator 2GHz 500E 800E H3101B reactance modulator HFA3101B96

    kf 8715

    Abstract: fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E HFA3101
    Text: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array July 1995 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI


    Original     		PDF HFA3101 10GHz HFA3101 10GHz) 390nH 825MHz 900MHz 75MHz 76MHz kf 8715 fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E

    HFA3101

    Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ 920mhz
    Text: HFA3101 Data Sheet File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		PDF HFA3101 HFA3101 10GHz) RF NPN POWER TRANSISTOR C 10-12 GHZ 920mhz

    transistor npn c 9012

    Abstract: HFA3101BZ 5GHz band pass filter
    Text: HFA3101 Data Sheet September 2004 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		PDF HFA3101 HFA3101 10GHz) FN3663 UPA101 transistor npn c 9012 HFA3101BZ 5GHz band pass filter

    HFA3101

    Abstract: 9700E fiber optic FM Modulator gilbert cell sum 8906 ic FM Modulator 2GHz 500E H3101B HFA3101B gilbert cell differential pair
    Text: HFA3101 TM Data Sheet September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		PDF HFA3101 HFA3101 10GHz) 10GHz 9700E fiber optic FM Modulator gilbert cell sum 8906 ic FM Modulator 2GHz 500E H3101B HFA3101B gilbert cell differential pair

    H3101B

    Abstract: HFA3101B HFA3101 HFA3101B96 HFA3101BZ HFA3101BZ96 STD-020C UPA101 gilbert cell sum IC 7812 pin configuration
    Text: HFA3101 Data Sheet September 2004 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		PDF HFA3101 HFA3101 10GHz) FN3663 UPA101 H3101B HFA3101B HFA3101B96 HFA3101BZ HFA3101BZ96 STD-020C UPA101 gilbert cell sum IC 7812 pin configuration

    4 npn transistor ic 14pin

    Abstract: MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6
    Text: DATA SHEET COMPOUND TRANSISTOR µPA101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA101B: Superior thermal dissipation due to studded 14-pin ceramic package


    Original     		PDF PA101 PA101B: 14-pin PA101G: PA101B-E1 4 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6

    NTE472

    Abstract: No abstract text available
    Text: NTE472 Silicon NPN Transistor RF Power Output PO = 1.8W @ 175MHz Description: The NTE472 is a silicon NPN transistor designed for amplifier, frequency multiplier or oscillator applications in military, mobile marine and citizens band equipment. Suitable for use as output driver


    Original     		PDF NTE472 175MHz NTE472 175MHz 225MHz

    MM4018

    Abstract: a5036 MM4018 motorola
    Text: MM4018 , < II The RF Line II 1., PNP SILICON RF POWER TRANSISTOR . . . designed for amplifier, frequency multiplier or oscillator applications in military and industrial equipment. Suitable for use as Class A, B, or C driver, or pre-driver stages in VHF applications.


    Original     		PDF MM4018 a5036 MM4018 a5036 MM4018 motorola

    multi emitter transistor

    Abstract: RF POWER TRANSISTOR 100MHz 7w RF POWER TRANSISTOR NPN rf transistor 320 IC vhf/uhf Amplifier multi-emitter transistor TRANSISTOR HANDLING 2A NTE16003
    Text: NTE16003 Silicon NPN Transistor RF Power Output, PO = 7W, 175MHz Description: The NTE16003 is an RF power transistor in a TO60 type case that employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance, and low output capacitance. This device is intended for Class A, B, or C amplifier, oscillator, or frequency multiplier circuits and is specifically designed for operation in the VHF–UHF region.


    Original     		PDF NTE16003 175MHz NTE16003 200mA, 150mA, 100MHz 175MHz, multi emitter transistor RF POWER TRANSISTOR 100MHz 7w RF POWER TRANSISTOR NPN rf transistor 320 IC vhf/uhf Amplifier multi-emitter transistor TRANSISTOR HANDLING 2A

    MPS6543

    Abstract: MPSH11
    Text: MPS6543 C TO-92 EB NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 100 µA to 10 mA range. Sourced from Process 47. See MPSH11 for characteristics. Absolute Maximum Ratings* Symbol


    Original     		PDF MPS6543 MPSH11 MPS6543

    PN3563

    Abstract: PN3563 equivalent PN918
    Text: PN3563 C TO-92 BE NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol


    Original     		PDF PN3563 PN918 PN3563 PN3563 equivalent

    PN3563

    Abstract: PN918 PN3563 equivalent
    Text: N PN3563 C TO-92 BE NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol


    Original     		PDF PN3563 PN918 PN3563 PN3563 equivalent

    pn3563

    Abstract: No abstract text available
    Text: PN3563 PN3563 C B TO-92 E NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings*


    Original     		PDF PN3563 PN918 pn3563

    2N5770

    Abstract: PN918
    Text: 2N5770 C TO-92 BE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol


    Original     		PDF 2N5770 PN918 2N5770

    815 transistor

    Abstract: HFA3101 3101-B noise cancellation IC 3101b
    Text: 80 HARRIS HFA3101 SEMICONDUCTOR Gilbert Cell UHF Transistor Array November 1996 Features Description • High Gain Bandwidth Product fT .10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded water UHF-1 SOI


    OCR Scan     		PDF HFA3101 HFA3101 10GHz) 10GHz 815 transistor 3101-B noise cancellation IC 3101b