VCE 100 IC 100MA NPN Search Results

ztx341

Abstract: Vce-80V
Contextual Info: ZTX341 140 0.16 120 hFE - Gain % VCE(sat) - Volts IC/IB=10 0.12 0.10 0.08 0.06 C B 100 80 ABSOLUTE MAXIMUM RATINGS. 100µA 1mA 10mA 100mA 10µA 100µA 1mA IC IC hFE v IC VCE(sat) v IC 10mA 100mA E E-Line TO92 Compatible 60 40 20 0.04 0.02 10µA ZTX341 ISSUE 2 – MARCH 94

FMMT497

Abstract: FMMT597 0401mA DSA003696
Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE FMMT497 ISSUE 3 – DECEMBER 1995 TYPICAL CHARACTERISTICS 0.6 0.6 +25 ° C 0.5 1mA 10mA 100mA 1A 0.1 Collector-Base Voltage Collector-Emitter Voltage 10mA 1mA 100mA 1A IC-Collector Current VCE sat v IC V+-=10V 0.9 +100 °C

Contextual Info: SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・High Current : IC=-800mA. ・DC Current Gain : hFE=100～630 VCE=-1V, Ic=-100mA . ・For Complementary with NPN type BC338.

BC327

Abstract: BC337 BC327 W 75 BC327 transistor BC337 45V 800mA NPN Transistor
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC327 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100~630 VCE=-1V, Ic=-100mA . • For Complementary with NPN type BC337.

BC328

Abstract: BC338 BC338N
Contextual Info: SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=-800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=-1V, Ic=-100mA . ᴌFor Complementary with NPN type BC338.

BC337 45V 800mA NPN Transistor

Abstract: BC327 45V 800mA PNP Transistor BC337 45V 800mA BC337 pnp transistor datasheet transistor bc337 datasheet BC327 BC337
Contextual Info: SEMICONDUCTOR BC337 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=1V, Ic=100mA . ᴌFor Complementary with PNP type BC327.

BC328

Abstract: BC338 transistor bc328
Contextual Info: SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=1V, Ic=100mA . ᴌFor Complementary with PNP type BC328.

BC327 45V 800mA PNP Transistor

Abstract: BC337 45V 800mA NPN Transistor transistor bc337 datasheet BC327 BC337 BC327 800mA PNP Transistor
Contextual Info: SEMICONDUCTOR BC327 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=-800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=-1V, Ic=-100mA . ᴌFor Complementary with NPN type BC337.

BC328

Abstract: BC338
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC328 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100~630 VCE=-1V, Ic=-100mA . • For Complementary with NPN type BC338.

BC327

Abstract: BC327 45V 800mA PNP Transistor f 630 TRANSISTOR BC327 45V 800mA NPN Transistor BC327 800mA PNP Transistor BC337 45V 800mA NPN Transistor bc327 45v 800mA pnp hFE-100 BC327 NPN transistor bc327 application note
Contextual Info: SEMICONDUCTOR BC327 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES High Current : IC=-800mA. DC Current Gain : hFE=100 630 VCE=-1V, Ic=-100mA . For Complementary with NPN type BC337. MAXIMUM RATING (Ta=25

Contextual Info: SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・High Current : IC=800mA. ・DC Current Gain : hFE=100～630 VCE=1V, Ic=100mA . ・For Complementary with PNP type BC328. MAXIMUM RATING (Ta=25℃)

BC337

Abstract: BC337 45V 800mA NPN Transistor BC327 45V 800mA PNP Transistor BC327 45V 800mA NPN Transistor BC337 45V 800mA f 630 TRANSISTOR hFE-100 BC327
Contextual Info: SEMICONDUCTOR BC337 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=800mA. DC Current Gain : hFE=100 630 VCE=1V, Ic=100mA . For Complementary with PNP type BC327. N E K G

BC337 45V 800mA NPN Transistor

Abstract: transistor bc327 BC327 BC337 bc337 45v 800mA
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC337 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=800mA. • DC Current Gain : hFE=100-400 VCE=1V, Ic=100mA . • For Complementary with PNP type BC327.

TRANSISTOR BC338

Abstract: BC328 BC338
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC338 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=800mA. • DC Current Gain : hFE=100-400 VCE=1V, Ic=100mA . • For Complementary with PNP type BC328.

BC328

Abstract: BC338 2BC338
Contextual Info: SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=800mA. DC Current Gain : hFE=100 630 VCE=1V, Ic=100mA . For Complementary with PNP type BC328. N E K G

BC327 45V 800mA PNP Transistor

Abstract: BC327 BC337 OF TRANSISTOR BC337 BC337 NPN transistor
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC327 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100-400 VCe=-1V, Ic=-100mA . • For Complementary with NPN type BC337.

BC337 45V 800mA NPN Transistor

Abstract: BC327 BC337 NPN general purpose transistor BC337 BC337 pnp transistor
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC337 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=800mA. • DC Current Gain : hFE=100-630 VCe=1V, Ic=100mA . • For Complementary with PNP type BC327. MAXIMUM RATINGS (Ta=25°C)

BC328

Abstract: BC338
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC338 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=800mA. • DC Current Gain : hFE=100-630 VCe=1V, Ic=100mA . • For Complementary with PNP type BC328. MAXIMUM RATINGS (Ta=25°C)

BC328

Abstract: BC338
Contextual Info: SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. BC328 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100-400 VCe=-1V, Ic=-100mA . • For Complementary with NPN type BC338.

Darlington pair IC

Abstract: marking cb b54 marking MPT3 MARKING DF ad marking diagram
Contextual Info: Transistors For Medium Power Amplification Part No. Package SST3 SMT3 SSTA56 MMSTA56 BV cbO BVceO BVebo Min. Min. M in. 80V I I 80V , 4V Ic b o @Vcb . ^ @IC & VCE VUE 8aÖ Mm. Max. Max. Max. , 100nA 80V , . 100 10mA 1V 100 100mA 1V & VM (Sat Max. 0.25V

GBC327

Abstract: GBC337
Contextual Info: ISSUED DATE :2005/10/21 REVISED DATE : GBC337 NPN SILICON TRANSISTOR Description The GBC337 is designed for drive and output-stages of audio amplifiers. Features High DC Current Gain: 100~630 @VCE=1V, IC=100mA Complementary to GBC327 Package Dimensions D TO-92

GBC328

Abstract: GBC338
Contextual Info: ISSUED DATE :2005/10/21 REVISED DATE : GBC338 NPN SILICON TRANSISTOR Description The GBC338 is designed for drive and output-stages of audio amplifiers. Features High DC Current Gain: 100~630 @VCE=1V, IC=100mA Complementary to GBC328 Package Dimensions D TO-92

f-30MHz

Abstract: 2N2483 2N2484
Contextual Info: H o TRANSISTOR CHIPS HIGH GAIN - SMALL SIGNAL NPN n oo \ / 100% Probe Tested to These Parameters @ 25°C h FE @VCe = 5V 2N2483 @IC= 10fiA @lc= 100mA @lc = 1mA 40120 75 Min 175 Min VcBO . V CEO Volts Mm;- Volts Min. @lc = @IC= 10mA 10mA •e =0 60 iB=o 60 /

base resistance for SOT23

Abstract: FMMT491 FMMT591 DSA003695
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT491 FMMT491 ISSUE 3 - OCTOBER 1995 ✪ FEATURES * Low equivalent on-resistance; RCE sat 210mΩ at 1A TYPICAL CHARACTERISTICS E C 0.6 0.6 +25 ° C 0.5 0.5 0.4 0.4 0.3 COMPLEMENTARY TYPE PARTMARKING DETAIL -