VCE 1200 AND 1 AMPS TRANSISTOR Search Results

FZT653

Abstract: FZT753 DSA003712
Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT653 FZT653 ISSUE 3– FEBRUARY 1995 FEATURES * Low saturation voltage TYPICAL CHARACTERISTICS 0.6 C COMPLEMENTARY TYPE – FZT753 PARTMARKING DETAIL – FZT653 E 0.5 0.4 0.3 B 175 VCE=2V ABSOLUTE MAXIMUM RATINGS.

Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT653 ISSUE 3– FEBRUARY 1995 FEATURES * Low saturation voltage 0.6 C COMPLEMENTARY TYPE – FZT753 PARTMARKING DETAIL – FZT653 E 0.5 225 0.4 C IC/IB=10 B 175 0.3 VCE=2V 0.2 0.1 ABSOLUTE MAXIMUM RATINGS.

221D

Abstract: MJE18206 MJE210 MJF18206 MPF930 MTP12N10 MTP8P10 MUR105 k 373
Contextual Info: MOTOROLA Order this document by MJE18206/D SEMICONDUCTOR TECHNICAL DATA MJE18206 MJF18206  Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES

ztx653

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX652 ZTX653 ISSUE 2 – JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX652 ZTX653 UNIT

FZT649

Abstract: FZT749 transistor FZT749
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT749 TYPICAL CHARACTERISTICS td tr 1.8 tf IB1=IB2=IC/10 ns ts 1.2 1.0 0.8 V 0.6 IC/IB=100 140 ns 1200 120 1000 100 COMPLEMENTARY TYPE – PARTMARKING DETAIL – ts 60 40 0.2 200 tr 0.01 0.1 1 10 E FZT649 FZT749

MGW12N120D

Contextual Info: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247

Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR td tr 1.8 tf IB1=IB2=IC/10 ns 1.6 VCE=-10V 160 1.4 ts 140 ns 1.2 1200 120 1.0 1000 100 0.8 tr td 20 IC/IB=10 0.001 0.01 0.1 1 10 C ABSOLUTE MAXIMUM RATINGS. 40 200 E FZT649 FZT749 B IC/IB=100 0.2 C tf 60 600

equivalent FZT651

Abstract: FZT651 FZT751 DSA003712
Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS FZT651 FZT651 ISSUE 2 – FEBRUARY 1995 FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage TYPICAL CHARACTERISTICS 0.6 C 0.5 225 0.3 VCE=2V ABSOLUTE MAXIMUM RATINGS. V 75 0.0001

MGW12N120D

Contextual Info: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247

FZT753

Abstract: FZT653 DSA003715
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT753 TYPICAL CHARACTERISTICS 0.6 td Switching time - Volts 0.4 I+ /I*=10 V 0.3 0.2 tf ts ns ns 140 E COMPLEMENTARY TYPE – 1400 120 1200 100 1000 80 800 60 600 40 400 20 200 0.0001 0.001 0.01 0.1 1 PARTMARKING DETAIL –

transistor d 1557

Abstract: MGW12N120
Contextual Info: MOTOROLA Order this document by MGW12N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW12N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced

t749

Abstract: ZDT749 DSA003727
Contextual Info: SM-8 DUAL PNP MEDIUM POWER TRANSISTORS ZDT749 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T749 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage

MJE 280 power transistor

Abstract: 100 Amp current 1300 volt diode 221D MJE18204 MJE210 MJF18204 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: MOTOROLA Order this document by MJE18204/D SEMICONDUCTOR TECHNICAL DATA MJE18204 MJF18204  Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 5 AMPERES

221D

Abstract: MJE18204 MJE210 MJF18204 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: MOTOROLA Order this document by MJE18204/D SEMICONDUCTOR TECHNICAL DATA MJE18204 MJF18204  Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 5 AMPERES

mgy20n120d

Abstract: IGBT 250 amp
Contextual Info: MOTOROLA Order this document by MGY20N120D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGY20N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

Contextual Info: ON Semiconductort MJE18206 MJF18206 SWITCHMODE NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS The MJE/MJF18206 have an application specific state–of–the–art

Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS FZT651 ISSUE 2 – FEBRUARY 1995 FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage 0.6 C 0.5 225 0.4 E COMPLEMENTARY TYPE – FZT751 IC/IB=10 C 175 0.3 VCE=2V 0.2 0.1 ABSOLUTE MAXIMUM RATINGS.

motorola 039 31

Abstract: 039 E 31 motorola MGW12N120
Contextual Info: MOTOROLA Order this document by MGW12N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGW12N120 Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced

MJE 5740

Abstract: 221D MJE18204 MJF18204 MPF930 MTP8P10 MUR105 tc5003
Contextual Info: ON Semiconductort MJE18204 MJF18204 SWITCHMODE NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS The MJE/MJF18204 have an application specific state–of–the–art

transistor motorola 236

Abstract: MGY25N120
Contextual Info: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced

MGW20N120

Abstract: transistor d 1557 305 Power Mosfet MOTOROLA
Contextual Info: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW20N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced

motorola 039 31

Abstract: MGW12N120 MGW12N
Contextual Info: MOTOROLA Order this document by MGW12N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW12N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced

340G-02

Abstract: MGY20N120D
Contextual Info: MOTOROLA Order this document by MGY20N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY20N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

MGW20N120

Contextual Info: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGW20N120 Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced