VCE 24 ICM 1A Search Results

BC84S

Contextual Info: IL BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N-P-N transistors Marking BC846 = ID BC846A = 1A BC846B = IB BC847 = 1H BC847A = IE BC847B = IF BC847C = 1G BC848 = 1M BC848A = 1] BC848B = IK BC848C = 1L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

MARKING ZT SOT23 TRANSISTOR

Abstract: PBSS4140T PBSS5140T free transistor and ic equivalent data PBSS4140
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4140T 40 V, 1A NPN low VCEsat BISS transistor Product specification Supersedes data of 2005 Feb 14 2005 Feb 24 Philips Semiconductors Product specification 40 V, 1A NPN low VCEsat (BISS) transistor PBSS4140T QUICK REFERENCE DATA

bcb47

Abstract: BC846-BC848 BC847C 125 BC848C 33T4 BC846 BC846A BC846B BC847 BC847A
Contextual Info: 23Ô33T4 000073b 7äT • BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N -P -N transistors Marking BC846 = ID BC846A = 1A BC846B = IB B C 847= 1H BC847A = IE BC847B = IF BC847C = 1G BC848 = 1M BC848A = 1J BC848B = IK BC848C = 1L PACKAGE OUTLINE DETAILS

MARKING ZT SOT23 TRANSISTOR

Abstract: PBSS4140T PBSS5140T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4140T 40 V, 1A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2005 Feb 14 2005 Feb 24 NXP Semiconductors Product data sheet 40 V, 1A NPN low VCEsat (BISS) transistor PBSS4140T FEATURES QUICK REFERENCE DATA

Contextual Info: DISCRETE SEMICONDUCTORS DAT PBSS4140T 40 V, 1A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2005 Feb 14 2005 Feb 24 NXP Semiconductors Product data sheet 40 V, 1A NPN low VCEsat (BISS) transistor PBSS4140T FEATURES QUICK REFERENCE DATA

ZUMT720

Abstract: ZUMT619 DSA003732
Contextual Info: Super323  SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT619 ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 2A Peak Pulse Current * Excellent HFE Characteristics Up To 2A (pulsed) * Extremely Low Equivalent On Resistance; RCE(sat)

npn switching transistor Ic 100mA

Abstract: ZUMT619 ZUMT720
Contextual Info: Super323  SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT619 ISSUE 2 - DECEMBER 2008 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 2A Peak Pulse Current * Excellent HFE Characteristics Up To 2A (pulsed) * Extremely Low Equivalent On Resistance; RCE(sat)

mje13009 equivalent

Abstract: mje13009L 2N2222 NPN Transistor features MJE13009 MJE13 MJE130 MJE13009L-T3P-T high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz 2n2222 transistor pin b c e MJE13009-T3P-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are

mje13009 equivalent

Abstract: 2N2222 SOA mje13009l MJE13009L-T3P-T QW-R214-011 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data
Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They

mje13009 equivalent

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They

FZT957QTA

Abstract: FZT957
Contextual Info: A Product Line of Diodes Incorporated Green FZT957 300V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -300V IC = -1A high Continuous Collector Current ICM = -2A Peak Pulse Current

Contextual Info: A Product Line of Diodes Incorporated Green FZT957 300V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > -300V • • IC = -1A high Continuous Collector Current • • ICM = -2A Peak Pulse Current Case: SOT223 Case material: molded plastic. “Green” molding compound.

mje13009l

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They

MJE13009L

Abstract: mje13009 equivalent MJE13009-T3P-T 2n2905 time delay relay jc 5010 transistor 1N4933 MJE13009 MJE13009L-T3P-T MJE13009-TA3-T MJE13009-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 1 TO-3P DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are

Contextual Info: A Product Line of Diodes Incorporated Green FZT857 300V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data •      BVCEO > 300V IC = 3.5A High Continuous Collector Current ICM = 5A Peak Pulse Current Very Low Saturation Voltage VCE sat < 155mV @ 1A

Discrete IGBTS

Abstract: SG12N06DP SG12N06P MDA100
Contextual Info: SG12N06P, SG12N06DP Discrete IGBTs Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R E C G G=Gate, C=Collector, E=Emitter SG12N06P SG12N06DP Symbol Test Conditions o o Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125

300UH

Abstract: Discrete IGBTS SG12N06DP SG12N06P
Contextual Info: SG12N06P, SG12N06DP Discrete IGBTs Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R E C G G=Gate, C=Collector, E=Emitter SG12N06P SG12N06DP Symbol Test Conditions o o Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125

Discrete IGBTS

Abstract: SG12N06DT SG12N06T 250NS120
Contextual Info: SG12N06T, SG12N06DT Discrete IGBTs Dimensions TO-247AD E C G C TAB SG12N06T G=Gate, C=Collector, E=Emitter,TAB=Collector SG12N06DT Symbol Test Conditions o o Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C

Contextual Info: 23Ô33T4 00DG73b 7flT • BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N-P-N transistors Marking BC846 = ID BC846A = 1A BC846B = IB BC847 = 1H BC847A = IE BC847B = IF BC847C = 1G BC848 = 1M BC848A = 1J BC848B = IK BC848C = 1L PACKAGE OUTLINE DETAILS

Contextual Info: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT619 IS S U E 1 - S E P T E M B E R FEATU RES 500mW POWER DISSIPATION * * * * lc CO N T 1A 2 A Peak P u lse C u rren t E x c e lle n t H FE C h a ra c te ristic s U p T o 2 A (p u lsed )

1M BC848

Abstract: BC848C BC846 BC846A BC846B BC847 BC847A BC847B BC847C BC848
Contextual Info: BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N -P -N transistors Marking BC846 = ID BC846A = 1A BC846B = IB BC847 = 1H BC847A = IE BC847B = IF BC847C = 1G BC848 = 1M BC848A = 1J BC848B = IK BC848C = 1L PA C K A G E O U TLIN E DETA ILS

Contextual Info: Advance Technical Information PolarHVTM IGBT IXGH28N60B3D1 VCES = 600V IC110 = 28A VCE sat ≤ 1.8V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM

transistor mje13007 equivalent

Abstract: mtp8p mje13007 equivalent
Contextual Info: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V

IXGH28N60B3D1

Abstract: IXGH28N60B3 IF110 p3nc
Contextual Info: Advance Technical Information IXGH28N60B3D1 PolarHVTM IGBT VCES = 600V = 28A IC110 VCE sat ≤ 1.8V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM