VCES 1500V Search Results
VCES 1500V Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TLX9160T |
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Photorelay (MOSFET output), 1a, 1500V/0.05A, 5000 Vrms, SO16L-T, Automotive |
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| PTMA401120A1AZ |
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10W, 36V to 75V Input, 1500V Isolation, DC-DC Converter 4-Surface Mount Module |
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| PTMA401120P2AZ |
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10W, 36V to 75V Input, 1500V Isolation, DC-DC Converter 6-Surface Mount Module |
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| PTMA403033A1AZ |
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10W, 36V to 75V Input, 1500V Isolation, DC-DC Converter 4-Surface Mount Module -40 to 85 |
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| PTMA403033A3AZ |
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10W, 36V to 75V Input, 1500V Isolation, DC-DC Converter 6-Surface Mount Module -40 to 85 |
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VCES 1500V Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V IXBF42N300 (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C |
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IC110 IXBF42N300 100ms 42N300 | |
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Contextual Info: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF42N300 VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C |
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IXBF42N300 IC110 IC110 100ms 100ms 42N300 | |
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Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor MMIX1B20N300C VCES = 3000V IC110 = 20A VCE sat 6.0V (Electrically Isolated Tab) C Symbol Test Conditions G Maximum Ratings VCES TJ = 25°C to 150°C |
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MMIX1B20N300C IC110 20N300C | |
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Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor MMIX1B15N300C VCES = 3000V IC110 = 15A VCE sat 6.0V (Electrically Isolated Tab) C Symbol Test Conditions G Maximum Ratings VCES TJ = 25°C to 150°C |
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MMIX1B15N300C IC110 15N300C | |
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Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF15N300C VCES = 3000V IC110 = 15A VCE sat 6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C |
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IXBF15N300C IC110 15N300C | |
IGBT 1500v 50A
Abstract: IGBT 1500v 25A
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IXGF25N300 338B2 IGBT 1500v 50A IGBT 1500v 25A | |
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Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE sat 3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C |
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IXBF20N360 IC110 20N360 H7-B11) | |
IXBFContextual Info: Advance Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF42N300 VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C 3000 |
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IXBF42N300 IC110 IC110 100ms 100ms 42N300 IXBF | |
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Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF10N300C VCES = 3000V IC110 = 10A VCE sat 6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM mbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C |
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IXBF10N300C IC110 10N300C | |
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Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL20N300C VCES = 3000V IC110 = 20A VCE sat 6.0V (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C |
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IXBL20N300C IC110 20N300C | |
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Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL60N360 VCES = 3600V IC110 = 36A VCE sat 3.4V (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C |
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IXBL60N360 IC110 100ms 60N360 H9-B11-27) | |
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Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF14N300 VCES = 3000V IC90 = 14A VCE sat 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C |
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IXBF14N300 100ms 14N300 | |
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Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF22N300 VCES = 3000V IC90 = 22A VCE sat 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C |
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IXBF22N300 100ms 22N300 3-10-14-A | |
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Contextual Info: Preliminary Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE sat 3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C |
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IXBF20N360 IC110 20N360 H7-B11) | |
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Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA14N300HV IXBH14N300HV VCES = 3000V IC110 = 14A VCE sat 2.7V TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 |
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IXBA14N300HV IXBH14N300HV IC110 O-263HV 100ms 14N300 | |
IXGF36N300
Abstract: 36N30 Application note for IXGF36N300 igbt 1500V 36N300
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IXGF36N300 IC110 36N300 8-27-08-C IXGF36N300 36N30 Application note for IXGF36N300 igbt 1500V | |
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Contextual Info: High Voltage IGBT VCES = 3000V IC25 = 36A VCE sat ≤ 2.7V IXGF36N300 For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 3000 V VGES Continuous ± 20 V VGEM Transient ± 30 V |
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IXGF36N300 IC110 36N300 11-23-09-D | |
IXGF36N300
Abstract: igbt 1500v 36n300 36N30
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IXGF36N300 IC110 36N300 11-23-09-D IXGF36N300 igbt 1500v 36N30 | |
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Contextual Info: Advance Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N300HV VCES = 3000V IC110 = 42A VCE sat ≤ 3.0V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ |
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IXBT42N300HV IC110 O-268 100ms 42N300 1-09-12-A | |
IXBT42N300HV
Abstract: transistor 42A
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IXBT42N300HV IC110 O-268 IC110 100ms 42N300 1-09-12-A IXBT42N300HV transistor 42A | |
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Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF28N300 VCES = 3000V IC90 = 28A VCE sat 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ VCGR TJ = 25°C to 150°C, RGE = 1M |
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IXBF28N300 100ms 28N300 | |
IGBT 1500v 50A
Abstract: IC tl 072 ixgf IXGF25N300 IGBT 1500V .50A pf98 338B2
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IXGF25N300 338B2 IGBT 1500v 50A IC tl 072 ixgf IXGF25N300 IGBT 1500V .50A pf98 338B2 | |
IGBT 1500v 50A
Abstract: IC tl 072 igbt 1500V
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IXGF25N300 338B2 IGBT 1500v 50A IC tl 072 igbt 1500V | |
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Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol IXBV22N300S Test Conditions VCES = 3000V IC110 = 22A VCE sat 2.7V PLUS220SMDHV Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M |
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IXBV22N300S IC110 PLUS220SMDHV 100ms 22N300 3-10-14-A | |