VDD50V Search Results
VDD50V Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: product P -P W A M M F I r LMAlNINtL F M W A M f 'f M iT M T I tN M A N L tM tN -100V. -12A, o.3n SDF9130 SDF9130 JAA JAB M H C M U b FEATURES • RUGGED PACKAGE • H I - R E L CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS |
OCR Scan |
-100V. IF--12A. | |
d3s diodeContextual Info: 2SK1906 LD L o w D rive S eries V D3S= 1 0 0 V 2063 N Channel Power M OSFET F e a tu re s • Low ON resistance. - Very high-speed switching. •Low-voltage drive. ■M icaless package facilitating mounting. A b s o lu te M ax im u m R a tin g s a t Ta = 25°C |
OCR Scan |
2SK1906 apacit63 51193TH X-8377 Na4225-l/3 d3s diode | |
uPD70F3433
Abstract: DAFCAN 0x00001428 uPD70F34 nec. 5.5 473 0x000004A3 upd70f3178 0x00000BC9
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V850E/CG4TM CarGate-3G-384F 32-bit PD70F3433 U17411EE1V1UM00 uPD70F3433 DAFCAN 0x00001428 uPD70F34 nec. 5.5 473 0x000004A3 upd70f3178 0x00000BC9 | |
sanyo wx series
Abstract: sanyo wx 2SJ277
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OCR Scan |
2SJ277 2SJ277-applied 10/ws, c-10V sanyo wx series sanyo wx 2SJ277 | |
UPD76F
Abstract: UPD76F0018GJ uPD76F0018 U14879EE1V0UM00 LMS-R5 upd76F00 UPD76F0 nec japan 7812 upd76f0017 sdc 339
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V850E/VANSTORM 32-/16-bit PD76F0018 U14879EE1V0UM00 build8-6130 UPD76F UPD76F0018GJ uPD76F0018 U14879EE1V0UM00 LMS-R5 upd76F00 UPD76F0 nec japan 7812 upd76f0017 sdc 339 | |
U17412EE1V0DS00
Abstract: LQFP100 uPD70F3433 M/U17411EE1V0UM00
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d2/9044 U17412EE1V0DS00 LQFP100 uPD70F3433 M/U17411EE1V0UM00 | |
1K x 8 static ram dip22
Abstract: EASE-AN-4050 uPD703128 ca2 dn 1319 uPD703129 transistors F6 DD52 transistor dd52 F12a U15839EE1V0UM00 upD70312
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V850E/CA2 32-/16-bit PD703128, PD703129 U15839EE1V0UM00 electricity6130 1K x 8 static ram dip22 EASE-AN-4050 uPD703128 ca2 dn 1319 uPD703129 transistors F6 DD52 transistor dd52 F12a U15839EE1V0UM00 upD70312 | |
DIODE g8Contextual Info: IRFS254A A d va n ce d Power MOSFET 250 V ^D S on = 0.14 a A O II • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 i-iA(M ax) @ VOS= 250V |
OCR Scan |
IRFS254A DIODE g8 | |
nec 7800
Abstract: uPD70F3178 ic p35 BVDD50 TIP11 CarGate SS53 LQFP100 afcan V850E TIP20
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Original |
PD70F3178 V850E/CG3TM 32-Bit V850E/CG3 16-bit gen6-9022/9044 nec 7800 uPD70F3178 ic p35 BVDD50 TIP11 CarGate SS53 LQFP100 afcan V850E TIP20 | |
2092AContextual Info: 2SK1475 2092A 2083A LD L o w D rive S eries VDSs = 1 0 0 V N Channel P o w er M O S F E T F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M aximum R atings atT a = 25°C Drain to Source Voltage V dss Gate to Source Voltage |
OCR Scan |
2SK1475 83093TH 2092A | |
Contextual Info: SOLITRON DEVICES INC 48E D • CATALOm PRODUCT fl3bflb02 00G353b SSO « S O D _ J fO lltr a n devices. inc. N-CHANNEL ENHANCEMENT MOS FET 100V, 25A, o. ion 5DF140 SDF140 SDF140 JAA JAB JDA FEATURES • • • • • • • • RUGGED PACKAGE |
OCR Scan |
fl3bflb02 00G353b 5DF140 SDF140 MIL-S-19500 IF-25A. IF-25A 300nS. | |
ANA 618 20010
Abstract: FFFFF486H MB080 20100 ct Cargate Power Convertibles pr 205 voltage regulator ana 618 uPD70F3178 V850E cargate m v850
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d2-2886-9022/9044 ANA 618 20010 FFFFF486H MB080 20100 ct Cargate Power Convertibles pr 205 voltage regulator ana 618 uPD70F3178 V850E cargate m v850 | |
IRFPF50
Abstract: 67a regulator
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OCR Scan |
IRFPF50 O-247 T0-220 O-218 creepage01 50Kii IT13tà IRFPF50 67a regulator | |
19500 TRANSISTOR 50AContextual Info: HARRIS SENICONÏ SECTOR 5ÖE D fX H A R R I S • M3DSE71 DD457S7 BG3 « H A S 2N7299D, 2N7299R 2N7299H SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRK160 D, R, H) December 1992 Radiation Hardened N-Channel Power MOSFETs Features • 50A, 100V, RD6(on) - 0.040Q |
OCR Scan |
M3DSE71 DD457S7 2N7299D, 2N7299R FRK160 2N7299H i00KRAD 300KRAD 1000KRAD 3000KRAD 19500 TRANSISTOR 50A | |
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cargate m v850 6 can 2 lin
Abstract: MB080 BV EI 382 1186 uPD70F3433 FFFFF482 aFCAN 0x00000428 U17411EE1V1UM00 0x00000564 0x00001428
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d2-2886-9022/9044 cargate m v850 6 can 2 lin MB080 BV EI 382 1186 uPD70F3433 FFFFF482 aFCAN 0x00000428 U17411EE1V1UM00 0x00000564 0x00001428 | |
3776a
Abstract: 2092A 2SK1475 7wu7
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OCR Scan |
2SK1475 3776a 2092A 2SK1475 7wu7 | |
uPD70F3178
Abstract: uart c code v850 FFFFF340
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Original |
V850E/CG3TM 32-bit PD70F3178 U16881EE2V1UM00 uPD70F3178 uart c code v850 FFFFF340 | |
BST74AContextual Info: BST74A J _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and for application in relay, high-speed and line-transformer |
OCR Scan |
BST74A O-92s. rnA/10 | |
220n5
Abstract: 2SK1273 2SK1293 hz nec 2SK1271 2SK1272 2SK1274 2SK1276 2SK1277 2SK1278
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OCR Scan |
2SK1271 2SK1272 2SK1273 2SK1274 2SX1275 185ns. 350nstyp 2SK1292 220n5 2SK1293 hz nec 2SK1276 2SK1277 2SK1278 | |
LQFP100
Abstract: uPD70F3178 BVSS50 TIP11
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Original |
d6-9022/9044 LQFP100 uPD70F3178 BVSS50 TIP11 | |
uPD70F3123
Abstract: UPD76F BT600 upd70f3123gj uPD70F3123GJ-UEN ETB29 70F3123 PIN DIAGRAM OF 7 segment display LT 542 "lcd 2 8" KHN 10
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V850E/CA1 32-/16-bit PD703123, PD70F3123 U14913EE1V0UM00 ele88-6130 uPD70F3123 UPD76F BT600 upd70f3123gj uPD70F3123GJ-UEN ETB29 70F3123 PIN DIAGRAM OF 7 segment display LT 542 "lcd 2 8" KHN 10 | |
tip21
Abstract: uPD70F3433 LQFP100 afcan V850E ci pal 007 FLASHPRO4 g0511 uPD70F3433A BVDD50 CarGate-3G-384F
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Original |
PD70F3433 V850E/CG4TM CarGate-3G-384F 32-Bit V850E/CG4 CarGate-3G-384F" 16-bit tip21 uPD70F3433 LQFP100 afcan V850E ci pal 007 FLASHPRO4 g0511 uPD70F3433A BVDD50 CarGate-3G-384F |