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9n60 mosfet Abstract: 9n60 Text: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX9N90 900V N 沟道功率 MOSFET 产品简介地址；成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel：086-28-85198496 85198428 Fax：086-28-8519893	Original	PDF	RX9N90 Tel086-28-85198496 Fax086-28-8519893 RX9N90] RX9N90, 00A/us, 9n60 mosfet 9n60
NTC 220-11 Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,	Original	PDF	transisto25-735. NTC 220-11 PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
RX12N60 Abstract: 12N60 Text: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX12N60 600V N 沟道功率 MOSFET 产品简介地址；成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel：086-28-85198496 85198428 Fax：086-28-8519893	Original	PDF	RX12N60 Tel086-28-85198496 Fax086-28-8519893 RX12N60] 12N60 RX12N60, O-220AB, RX12N60
8N60 Abstract: RX8N60 Text: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX8N60 600V N 沟道功率 MOSFET 产品简介地址；成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel：086-28-85198496 85198428 Fax：086-28-8519893	Original	PDF	RX8N60 Tel086-28-85198496 Fax086-28-8519893 RX8N60] RX8N60, O-220AB, 00A/us, 8N60 RX8N60
POWER BJTs Abstract: AN1540 IXYS SCR Gate Drive vertical pnp bjt failure analysis IGBT Drive Base BJT Nippon capacitors IGBT tail time Text: MOTOROLA Order this document by AN1540/D SEMICONDUCTOR APPLICATION NOTE AN1540 Application Considerations Using Insulated Gate Bipolar Transistors IGBTs Prepared by: C.S. Mitter Motorola Inc. DEVICE CHARACTERISTICS The recently introduced Insulated Gate Bipolar Transistor	Original	PDF	AN1540/D AN1540 AN1540/D* POWER BJTs AN1540 IXYS SCR Gate Drive vertical pnp bjt failure analysis IGBT Drive Base BJT Nippon capacitors IGBT tail time
transistor 6n60 Abstract: RX6N60 power mosfet 6n60 Text: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX6N60 600V N 沟道功率 MOSFET 产品简介地址；成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel：086-28-85198496 85198428 Fax：086-28-8519893	Original	PDF	RX6N60 Tel086-28-85198496 Fax086-28-8519893 RX6N60] RX6N60, O-220AB, 00A/us, transistor 6n60 RX6N60 power mosfet 6n60
5N60 Abstract: No abstract text available Text: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX5N60 600V N 沟道功率 MOSFET 产品简介地址；成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel：086-28-85198496 85198428 Fax：086-28-8519893	Original	PDF	RX5N60 Tel086-28-85198496 Fax086-28-8519893 RX5N60] RX5N60, O-220AB, 00A/us, 5N60
Philips high frequency bipolar transistor with Ft Abstract: equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,	Original	PDF	MGM011 BLV861 BLV2045 Philips high frequency bipolar transistor with Ft equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout
via vn800 Abstract: PS-2403D F-120-9A VN800 VDMOSFET 2403D AN1351 IEC801-6 L6376 VN340 Text: AN1351 APPLICATION NOTE VIPower AND BCDmultipower: MAKING LIFE EASIER WITH ST’s HIGH SIDE DRIVERS P. Laupheimer 1. ABSTRACT Industrial environments need high side switches in applications like PLC programmable logic controllers as actuators of lamps, valves and relays. STMicroelectronics is covering the complete	Original	PDF	AN1351 via vn800 PS-2403D F-120-9A VN800 VDMOSFET 2403D AN1351 IEC801-6 L6376 VN340
Hard Disk drive spindle motor control inductive sense Abstract: design ideas hard drive spindle motors diagram Philips stepper motor PHC21025 EIGHT MOSFET ARRAY Silicon P-Channel Junction FET sot23 Dual N FET spindle and VCM motor controller PHN405 Text: IDEAS FOR DESIGN Page Power/battery switching using VD-MOS FETs 2 Drivers for brushless DC motors 4 Using the PHN708 and PHN405 in hard disk drives 6 Siren driver circuit for car alarms 9 Printed circuit board heatsink area for surface-mount packages 10 Philips Semiconductors	Original	PDF	PHN708 PHN405 MBB446 OT223 Hard Disk drive spindle motor control inductive sense design ideas hard drive spindle motors diagram Philips stepper motor PHC21025 EIGHT MOSFET ARRAY Silicon P-Channel Junction FET sot23 Dual N FET spindle and VCM motor controller
transistor 7n60 Abstract: No abstract text available Text: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX7N60 600V N 沟道功率 MOSFET 产品简介地址；成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel：086-28-85198496 85198428 Fax：086-28-8519893	Original	PDF	RX7N60 Tel086-28-85198496 Fax086-28-8519893 RX7N60] RX7N60, O-220AB, 00A/us, transistor 7n60
Untitled Abstract: No abstract text available Text: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX15N60 600V N 沟道功率 MOSFET 产品简介地址；成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel：086-28-85198496 85198428 Fax：086-28-8519893	Original	PDF	RX15N60 Tel086-28-85198496 Fax086-28-8519893 RX15N60] 15N60 RX12N60,
RX10N60 Abstract: 10n60 transistor Text: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX10N60 600V N 沟道功率 MOSFET 产品简介地址；成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel：086-28-85198496 85198428 Fax：086-28-8519893	Original	PDF	RX10N60 Tel086-28-85198496 Fax086-28-8519893 RX10N60] 10N60 RX10N60, O-220AB, RX10N60 10n60 transistor
via vn800 Abstract: 2403d keytek VDMOSFET VN340 L6376 AN358 design rules AN1351 VN800 IEC61000-4-4 Text: AN1351 APPLICATION NOTE VIPower AND BCDmultipower: MAKING LIFE EASIER WITH ST’s HIGH SIDE DRIVERS P. Laupheimer 1. ABSTRACT Industrial environments need high side switches in applications like PLC programmable logic controllers as actuators of lamps, valves and relays. STMicroelectronics is covering the complete	Original	PDF	AN1351 via vn800 2403d keytek VDMOSFET VN340 L6376 AN358 design rules AN1351 VN800 IEC61000-4-4

PHC21025 Abstract: No abstract text available Text: Philips Semiconductors Ideas for design Small-signal Field-effect Transistors POWER/BATTERY SWITCHING USING VD-MOS-FETS A Power switch can be used to disconnect a load during a period of non use. The load may be anything from a light bulb, an electronic valve, a stepper or brush motor to	OCR Scan	PDF