VERY HIGH AREA IR PHOTODIODE Search Results

Contextual Info: Product Group: Vishay Optoelectronics, Sensors / December 2014 Author: Andreas Puetz Tel: Andreas.Puetz@vishay.com E-mail: +49-7131-67-2662 New VEMD5010X01 and VEMD5110X01 Silicon PIN Photodiodes Deliver 7.5 mm2 Sensitive Area in Low-Profile Packages Product Benefits:

2SC869

Contextual Info: MITSUBISHI SILICON AVALANCHE PHOTODIODES blE D • lflITS PD1XX5 SERIES ^ 4 ^ 0 2 ^ DDIMTGT 535 MITSUBISHI DISCRETE SC FOR OPTICAL COMMUNICATION AND RADAR SYSTEMS TYPE NAME FEATURES DESCRIPTION • High speed response (pulse rise tim e 750ps) PD1XX5 is a silicon avalanche photodiode (Si-APD)

VFIR

Abstract: PIN photodiode 850nm PIN photodiode chip 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm Fiber-optic PIN photodiode A/W 850nm SD150-14-006 VCSEL die bonding PIN photodiode chip 850nm
Contextual Info: SD150-14-006 16/32Mbps Si PIN Photodiode Chip The SD150-14-006 chip is a silicon pin photodiode that has been specifically developed for the price-sensitive OEM optical communication applications, including IrDA-compatible transceivers, fiber-optic LAN, VCSEL-based IR links, and instrumentation. Designed to be fully depleted at

Vactec 8441b

Abstract: VTB8441B Ir photodiodes 2B50 ID12 VTB8440B VTB844DB Vactec VTB process photodiodes photodiodes
Contextual Info: 20/07 '00 11:02 01189845425 PACER COMPONENTS V T B8 44 0B , 8441B VTB Process Photodiodes 7'W 7' A P A C K A G E D IM E N S IO N S \r inch mm -ilû (7.B7) .070 (1.7B) .060 (1.52) (f^ 3 ,soï 60) H0M‘ fib MINIMUM .315 (6-00) .305 (7.75) (5.00) NOM. (5-00)

Contextual Info: SIEMENS SFH 232 GERMANIUM PIN PHOTODIODE Package Dimensions in Inches mm Anode .570(14.5) .492(12.5) 149(3.8) .138(3.5) -X - •J57(4.0j .149 (3.8) *006 (.15) Max. ~ T 0.189(4.80) 0.179(4.55) 0.100 (2.54), _L .018 (0.45) .220(5.6) .208 (5.3) .086 (2.2) ~079 (2.0) /

Contextual Info: bGE D • ÛEBStiGS DD4h725 24b « S I E G 7 SIEMENS AKTIENGESELLSCHAF SIEMENS SFH 232 GERMANIUM PIN PHOTODIODE Package Dimensions in Inches mm Cathode 570(14 5) 492(12 5) 149 (3 8} 138 (3 5) _ u N»_ 0 100 (2541 1 157 (4 0j .149 (3 8) Max /¡fisi I 0 189(4

Contextual Info: bDE D • flEBSbOS D04b727 DIT « S I E G SIEMENS AKT IENGESELLSCHAF SIEMENS SFH 233 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings * Anode Marking: Projection at Package Bottom Operating and Storage Temperature Range T0P, T3Te Reverse Voltage (VR) Power Dissipation (PTO t )

APY12

Abstract: APY 12 Siemens photodiode visible light Germanium power K/HOP-1045
Contextual Info: SFH 231 SIEMENS GERMANIUM PIN PHOTODIODE Package Dimensions in Inches mm FEATURES Maximum Ratings * Anode Marking: Projection at Package Bottom • Usage: Visible Light and Near Infrared Range * High Spectral Sensitivity ■ High Reliability * Very Short Switching Time

Contextual Info: SIEMENS SFH 233 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings • Anode Marking: Projection at Package Bottom Operating and Storage Temperature Range T0P, Ts tg -4 0 “ to +80°C Reverse Voltage (VR) . 10 V

near IR sensors with daylight filter

Contextual Info: Product Group: Vishay Optoelectronics, Sensors / September 2014 Author: Joerg Wedermann Tel: +49 7131 67 3027 E-mail: joerg.wedermann@vishay.com New VEMD6010X01 and VEMD6110X01 Silicon PIN Photodiodes The News: Vishay Intertechnology Automotive-Grade PIN Photodiodes in 1206

germanium photodiode PIN

Abstract: pin photodiode 1550 sensitivity photodiode PIN 1300 sensitivity pin Photodiode 1300 nm Germanium power t2856
Contextual Info: SIEMENS SFH 232 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings * Anode Marking: Tab at Package Bottom Operating and Storage Temperature Range T0P, Tstg .-40" to +80“C Reverse Voltage (VR) .15V

VTB8440B

Abstract: VTB8440 VTB8441B VTB process photodiodes VTB8441
Contextual Info: VTB Process Photodiodes VTB8440B, 8441B PACKAGE DIMENSIONS inch mm CASE 21F 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared

FID08T13TX

Abstract: 08T13TX photodiode 850nm PIN photodiode 10 nm
Contextual Info: FID 08T13TX SILICON UN PHOTOnOK DESCRIPTION The FID08T13TX is a Si-PIN photodiode designed for use in optical local area network LAN system and optical data link system at 0.8jum wavelength region. A photodiode chip having 1000/xm 1mm diameter of photosensitive

InGaAs Photodiode 1550nm

Abstract: Photodiode, 1550nm photodiode responsivity 1550nm 2 1310nm photodiode for 10Gbps 1310nm photodiode 1620nm
Contextual Info: FCI-InGaAs-25C 10Gbps InGaAs Photodiode APPLICATIONS FEATURES  High  High Speed Optical Communications  OC-192  Optical Networking  Optical Measurement Speed, 10 Gbps Data Rates Dark Current  Front Illuminated  High Responsivity, Typ. 0.95A/W

SFH 325 equivalent

Abstract: t2856 SFH100 IRf 334
Contextual Info: SIEMENS SFH 100 SILICON PHOTODIODE HIGH BLUE SENSITIVITY Package Dimensions in Inches mm .523 (13.3) -.020 (.5) .I -12B (3.25) T j » <3.05) I. f m _031 (.8) .028 (.7) .008(20) U r Radiant sensitive area 334 X 098 (8 5 x 2 .5 ) UN FEATURES Maximum Ratings

Contextual Info: MITSUBISHI SILICON AVALANCHE PHOTODIODES blE ]> • PD1XX2 SERIES bSHRflST 0014705 TiT » M I T S MITSUBISHI DISCRETE SC FOR OPTICAL COMMUNICATION AND RADAR SYSTEMS TYPE NAME DESCRIPTION FEATURES PD1XX2 is a silicon avalanche photodiode (Si-APD) • High speed response (pulse rise tim e 150ps)

photodiodes mitsubishi

Contextual Info: blE ]> • GD1 4 7 2 5 MITSUBISHI DISCRETE 7 flfl IMITS MITSUBISHI InGaAs PHOTODIODES PD8XX2 SERIES SC FOR OPTICAL COMMUNICATION TYPE NAME DESCRIPTION PD8XX2 is an FEATURES InGaAs avalanche • High quantum efficiency photodiode suitable fo r receiving the light having a wavelength

GEO06314

Abstract: Q62702-P936
Contextual Info: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode With Very Short Switching Time SFH 216 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Kurze Schaltzeit typ. 5 ns • Hermetisch dichte Metallbauform (TO-18)

GEOY6314

Abstract: Fotodiode tci 571 Q62702-P936
Contextual Info: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode With Very Short Switching Time SFH 216 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Kurze Schaltzeit typ. 5 ns • Hermetisch dichte Metallbauform (TO-18)

foto sensor

Abstract: foto transistor tci 411 Q62702-P936 SFH216
Contextual Info: SFH 216 SFH 216 feo06314 Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● Speziell geeignet für Anwendungen im

ZTX384

Abstract: BPW41D ultrasonic 4046 pll zpd200 low noise ir photodiode amplifier INTRODUCTION OF AUTOMATIC ROOM LIGHT CONTROL Design and construction Wave FM radio transmitter BPW41 IR DATA BPW41 circuit application 4046 self bias amplifier
Contextual Info: Application Note 3 Issue 2 November 1995 Infra-Red Remote Control and Data Transmission An Introduction to Photodiodes - Load Circuits and Applications David Bradbury Introduction The use of short range remote control and data transmission systems in both

CQY78

Abstract: CQY77 CQY78 IV CQY77A DIN5033 BPW33 germanium photodiode PIN phototransistor 600 nm solar cell transistor infrared photodiode germanium
Contextual Info: General IR and Photodetector Information Appnote 37 1. Detectors Radiation-sensitive Components Charge Carrier Generation in a Photodiode Figure 1 shows the basic design of a planar silicon photo-diode with an abrupt pn transition. Due to the differing carrier concentrations, a field region free of mobile carriers, the space charge

quad photodiode

Abstract: OP5925 OPR5911 very high area ir photodiode OPR5925 photodiode encoder
Contextual Info: Surface Mount Quad Photodiode OPR5911, OPR5925 Features: • • • • Surface mountable Closely matched responsivity High temperature operation Separate cathode connections OPR5925 Description: Each OPR5911 and OP5925 device is a four-element photodiode that is enclosed in a compact polyamide chip

Fotodiode

Abstract: GEOY6314 Q62702-P936
Contextual Info: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode With Very Short Switching Time SFH 216 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Kurze Schaltzeit typ. 5 ns • Hermetisch dichte Metallbauform (TO-18)