VF 539 Search Results

MA3J745

Abstract: MA3X704A MA745
Contextual Info: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit : mm 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 • Features • Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704A) • Optimum for high-frequency rectification because of its short

fa 5571 CROSS REFERENCE

Abstract: MCEE bc6 csr MPC500 MPC509 csr bc6 fd98s perfo 124 373 csg 6522 GPR5-48
Contextual Info: Freescale Semiconductor, Inc. Page Number Paragraph Number 2.5.4.3 Development Port Serial Clock Input DSCK . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-16 2.5.4.4 Instruction Fetch Visibility Signals (VF[0:2]) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-17

Contextual Info: 10mm High Power Infrared LED TCI Part No. TIR850-RAW-5393C Radial Infrared LED Chip Power mW/sr Vf (v) Matrial λD(nm) GaAlAs 850 Len Color Water Clear www.taitroncomponents.com ISO 9001 Certified Typ. Max. 1.5 2.1 at IF= mA 150 Viewing Angle Outline (mm)

Contextual Info: SENSITRON SEMICONDUCTOR SPM1007 TECHNICAL DATA DATA SHEET 5393, REV. B 1200 VOLT, 29 AMP THREE PHASE SILICON CARBIDE MOSFET BRIDGE WITH SILICON CARBIDE DIODES FEATURES: • 80mΩ typical on-resistance  Low Vf silicon carbide Schottky barrier diode included in parallel with body diode

Contextual Info: 1N5391G thru 1N5399G Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - Glass passivated chip junction - High efficiency, Low VF - High current capability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and

1N5391S

Abstract: 1N5399S
Contextual Info: IM 1N5391S - 1N5399S TAIWAN SEMICONDUCTOR 1.5 AMPS. Silicon Rectifiers DO-41 RoHS COMPLIANCE Features .205 5.2 .166 (4.2) High current capability, Low VF. -0- High reliability & Current capability. High surge current capability. Low power loss, high efficiency.

Contextual Info: 1N5391S - 1N5399S 1.5 AMPS Silicon Rectifiers DO-41 Features High current capability, Low VF High reliability & Current capability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing code & prefix "G" on datecode

Contextual Info: 1N5391G - 1N5399G Pb 1.5AMPS Glass Passivated Rectifiers DO-15 RoHS COMPLIANCE Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing

Contextual Info: 1N5391G - 1N5399G Pb 1.5AMPS Glass Passivated Rectifiers DO-15 RoHS COMPLIANCE Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing

1N5399G

Contextual Info: 1N5391G - 1N5399G 1.5AMPS Glass Passivated Rectifiers DO-15 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode

Contextual Info: 1N5391G - 1N5399G 1.5AMPS Glass Passivated Rectifiers DO-15 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode

1N5391

Abstract: 1N5399
Contextual Info: TAIWAN 1N5391 -1N5399 m . SEMICONDUCTOR 1.5 AMPS. Silicon Rectifiers RoHS COMPLIANCE DO-15 .140 3.6 Features_ <• 1.0 (2 5 .4 ) TO M MIN. DIA. H High efficiency, Low VF High current capability High reliability High surge current capability

Contextual Info: 1N5391 thru 1N5399 Taiwan Semiconductor CREAT BY ART Silicon Rectifiers FEATURES - High efficiency, Low VF - High current capability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC

Contextual Info: 1N5391 - 1N5399 Pb 1.5 AMPS. Silicon Rectifiers DO-15 RoHS COMPLIANCE Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode

Contextual Info: 1N5391G - 1N5399G 1.5 AMPS. Glass Passivated Rectifiers DO-15 Features Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Mechanical Data Cases: Molded plastic Epoxy: UL 94V-0 rate flame retardant

A75 marking code

Contextual Info: 1N5391 - 1N5399 CREAT BY ART Pb 1.5 AMPS. Silicon Rectifiers DO-15 RoHS COMPLIANCE Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode

Contextual Info: 1N5391S - 1N5399S Pb 1.5 AMPS Silicon Rectifiers DO-41 RoHS COMPLIANCE Features High current capability, Low VF High reliability & Current capability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing code & prefix "G" on datecode

1N5391G

Abstract: 1N5399G
Contextual Info: is TAIWAN SEMICONDUCTOR 1N5391G - 1N5399G 1.5 AMPS. Glass Passivated Rectifiers DO-15 RoHS COMPLIANCE J R . .1 40 3.6 / 104 (5.6) -Y- 444-Y- MIN DIA. Features H t i Glass passivated chip junction. High efficiency, Low VF High current capability High reliability

LB 11917

Abstract: enthalpy
Contextual Info: STEAM TABLES Properties of Saturated & Superheated Steam Table 1. Saturated Steam: Temperature Table Temp. Fahr. t Abs. Press. Lb per Sq. In. p Specific Volume Sat. Sat. Liquid Evap. Vapor vf vfg vg Sat. Liquid hf Enthalpy Evap. hfg Sat. Vapor hg Sat. Liquid

1N5391S

Abstract: 1N5399S
Contextual Info: 1N5391S - 1N5399S 1.5 AMPS. Silicon Rectifiers DO-41 Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Mechanical Data Cases: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: Pure tin plated, lead free., solderable

Contextual Info: 1N5391 - 1N5399 1.5 AMPS. Silicon Rectifiers DO-15 Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Mechanical Data Cases: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: Pure tin plated, lead free., solderable

Contextual Info: 1N5391S thru 1N5399S Taiwan Semiconductor CREAT BY ART FEATURES Silicon Rectifiers - High efficiency, Low VF - High current capability - High reliability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

znr varistor

Abstract: DXT031-38-1A RC SUPPRESSOR 220v ac solenoid valve VF1000 vf3160 VF5000 VF5220 solenoid valve 24v vf312
Contextual Info: 5 Port Pilot Solenoid Valve Rubber Seal VF1000/3000/5000 SY SV SY SYJ Large flow capacity, SX Yet compact size. VK Low power consumption. VZ 1.8WDC VF Exhausting equipment for pilot valve not required. VFR Common exhaust for main valve and pilot valve is available.

triode

Abstract: pj 939 UCH11 SE-450 philips oszillator pj+939+lv
Contextual Info: 6 Minwkdt" l u c H 11 IRIODE-HEXODE for use as frequency converter TRIODE-HEXODE pour utilisation comme changeuse de fréquence TEIODE-HEXODE zur Verwendung als Mischrühre Heating: indirect by A.C. or D.C.; series supply 20 V Chauffage: Indirect par C.A. ou C.C.; Vf