VI SOT23 MARKING Search Results
VI SOT23 MARKING Result Highlights (5)
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Description |
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| TBAW56 |
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Switching Diode, 80 V, 0.215 A, SOT23 |
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| 5962-8950303GC |
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ICM7555M - Dual Marked (ICM7555MTV/883) |
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| 54HC221AJ/883C |
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54HC221AJ/883C - Dual marked (5962-8780502EA) |
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| 54ACT157/VFA-R |
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54ACT157/VFA-R - Dual marked (5962R8968801VFA) |
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| 54LS37/BCA |
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54LS37/BCA - Dual marked (M38510/30202BCA) |
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VI SOT23 MARKING Datasheets Context Search
Catalog Datasheet |
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Contextual Info: STT6N3LLH6 N-channel 30 V, 0.021 Ω typ., 6 A STripFET VI DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet - production data Features Type RDS on VDSS max ID PTOT 6A 1.6 W 0.025 Ω (VGS= 10 V) 4 5 6 3 STT6N3LLH6 30 V 1 0.036 Ω (VGS= 4.5 V) SOT23-6L |
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OT23-6L OT23-6L DocID023012 | |
STT6N3LLH6
Abstract: DIODE marking A2 stt6n3
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OT23-6L OT23-6L STT6N3LLH6 DIODE marking A2 stt6n3 | |
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Contextual Info: Surface M ount Dual Zener Diodes 350mW Dual Zener Diodes/SOT23 Type Number Marking Code Maximum Zener Impedance Zener Voltage Range* VZ @ Izr ZZT @ !zt Typical Temperature Coefficient TC ZZK @ >ZK Volts O hm s mA O hm s mA VI V2 V3 2.5-2.9 2.8-3.2 3.1-3.5 |
OCR Scan |
350mW Diodes/SOT23 DZ23-C2V7 DZ23-C3 DZ23-C3V3 DZ23-C3V6 DZ23-C3V9 DZ23-C4V3 DZ23-C4V7 DZ23-C5V1 | |
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Contextual Info: STT4P3LLH6 P-Channel 30 V, 0.04 Ω typ., 4 A STripFET VI DeepGATE™ Power MOSFET in SOT23-6L package Datasheet - preliminary data Features 4 5 6 3 Order code VDS RDS on max ID STT4P3LLH6 30 V 0.06 Ω at 10 V 4A • RDS(on) * Qg industry benchmark 2 1 |
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OT23-6L OT23-6L DocID024615 | |
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Contextual Info: STT6N3LLH6 N-channel 30 V, 0.021 Ω typ., 6 A STripFET VI DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet - production data Features Order code VDSS RDS on max ID PTOT 6A 1.6 W 0.025 Ω (VGS= 10 V) 4 STT6N3LLH6 5 6 30 V 3 2 1 0.036 Ω (VGS= 4.5 V) |
Original |
OT23-6L OT23-6L DocID023012 | |
CHDTC114EKGPContextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTC114EKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64) |
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CHDTC114EKGP 100OC -40OC 50m100m CHDTC114EKGP | |
CHDTA114YKGPContextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA114YKGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 70 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64) |
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CHDTA114YKGP i-500 100OC -100m -500m -40OC -200m CHDTA114YKGP | |
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Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA144EKPT SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64) |
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CHDTA144EKPT -100m 100OC -500m -40OC -200m | |
high gain PNP POWER TRANSISTOR "SOT23"Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA114YKPT SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 70 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64) |
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CHDTA114YKPT 100OC -100m -500m -40OC -200m high gain PNP POWER TRANSISTOR "SOT23" | |
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Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTC124EKPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE .066 1.70 (3) (2) .055 (1.40) .047 (1.20) MARKING |
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CHDTC124EKPT 100OC -40OC 50m100m | |
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Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTC143EKPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64) |
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CHDTC143EKPT 100OC -40OC 50m100m | |
CHDTC114EContextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTC114EKPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64) |
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CHDTC114EKPT 100OC -40OC 50m100m CHDTC114E | |
CHDTC124EKGPContextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTC124EKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE .066 1.70 (3) (2) .055 (1.40) .047 (1.20) MARKING |
Original |
CHDTC124EKGP 100OC -40OC 50m100m CHDTC124EKGP | |
CHDTC143EKGP
Abstract: a8j* npn transistor
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CHDTC143EKGP 100OC -40OC 50m100m CHDTC143EKGP a8j* npn transistor | |
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CHDTA114EKGPContextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA114EKGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64) |
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CHDTA114EKGP -100m 100OC -500m -40OC -200m CHDTA114EKGP | |
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Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA124EKPT SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64) |
Original |
CHDTA124EKPT -100m 100OC -500m -40OC -200m | |
MARKING 103Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA114EKPT SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64) |
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CHDTA114EKPT -100m 100OC -500m -40OC -200m MARKING 103 | |
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Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA144EKTPT SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64) |
Original |
CHDTA144EKTPT -100m 100OC -500m -40OC -200m | |
CHDTA124EKGPContextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA124EKGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64) |
Original |
CHDTA124EKGP -100m 100OC -500m -40OC -200m CHDTA124EKGP | |
CHDTA144EKGPContextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA144EKGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64) |
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CHDTA144EKGP -100m 100OC -500m -40OC -200m CHDTA144EKGP | |
marking SH SOT23
Abstract: smd marking 619 BB505B smd marking bb marking 12 SOD123 SOD-123 BB801 BB409 BA 811 SIEMENS marking
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OCR Scan |
0235bDS DO-35 OD-123 OT-23 marking SH SOT23 smd marking 619 BB505B smd marking bb marking 12 SOD123 SOD-123 BB801 BB409 BA 811 SIEMENS marking | |
MARKING WRS
Abstract: Q62702-C2266 40VIE
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Q62702-C2266 OT-23 MARKING WRS Q62702-C2266 40VIE | |
Q62702-C2261Contextual Info: NPN Silicon Digital Transistor BCR 148 ● Switching circuit, inverter, interface circuit, driver circuit ● Built-in bias resistor R1 = 47 kΩ, R2 = 47 kΩ 2 3 1 Type BCR 148 Marking WEs Ordering Code (8-mm tape) Pin Configuration 1 2 3 Q62702-C2261 |
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Q62702-C2261 OT-23 Q62702-C2261 | |
Q62702-C2262Contextual Info: PNP Silicon Digital Transistor BCR 183 ● Switching circuit, inverter, interface circuit, driver circuit ● Built-in bias resistor R1 = 10 kΩ, R2 = 10 kΩ 2 3 1 Type BCR 183 Marking WMs Ordering Code (8-mm tape) Pin Configuration 1 2 3 Q62702-C2262 |
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Q62702-C2262 OT-23 Q62702-C2262 | |