VIP ER 50 Search Results

2N4048

Abstract: pnp germanium to36 2N2156 2N4050 T1809 germanium 2N2152 2N2359 TO36 2N4053
Contextual Info: 59 GERMANIUM POWER TRANSISTORS C U R R E f JT G A IN SA T U R A T IO M V O LT A G ES @> @ TYPE N U M BER C A SE T YPE VCBO V V CEO V C ER V V EBO V 30 AM P GE 3MAN UM P VIP V C ES V M IN . hl:E | M AX. V CE V I 'c A V C E s V BE(s> V I V ’c A 'b I A Observe (—) Negative Polarity

Contextual Info: L64013VIP Page 1 Friday, May 29, 1998 8:29 AM LSI LOGIC L64013 VIP Bridge P relim inary Datasheet The L64013 VIP Bridge is a companion chip of LSI Logic’s L64020 Digital Video Decoder DVD . The L64013 provides a fully integrated, low-cost video interface between a VESA Video Interface Port (VIP) and

C8100

Abstract: DIL48 LAL 2.25 K2921 GDTD ISL PKT 4113 QFP64 SAA5244A SAA5247 SAA5249
Contextual Info: NAPC/PHILIPS bâE SEMICOND D t.bSa'iSM GGTGbTS Philips Semiconductors E13 « S IC 3 Preliminary specification Integrateci VIP and Teletext with Background SAA5249 M em ory Controller IVT1.1BMCX FEATURES • Complete teletext decoder featuring a background

Contextual Info: /T 7 SCS-THOMSON * 7 M, « IM ilL Ë O T IM O T S M 221 DUAL CMOS OPERATIONAL AMPLIFIER AND DUAL CMOS COMPARATOR SINGLE SUPPLY OPERATION FROM 2.7V TO 16V LOW SUPPLY CURRENT: 500|jA total package with Vcc = 5V LATCH-UP IMMUNITY OPERATIONAL AMPLIFIERS

Contextual Info: IN TE G R A TE D ClR C U fTS SAA5249 Integrated VIP and Teletext with Background Memory Controller IVT1.1BMCX Preliminary specification File under Integrated Circuits, IC02 PHILIPS September 1996 PHILIPS P h ilip s S e m i c o n d u c t o r s P r e lim in a r y s p e c ific a tio n

2GMI

Contextual Info: MCP6N11 500 kHz, 800 µA Instrumentation Amplifier Features Description • Rail-to-Rail Input and Output • Gain Set by 2 External Resistors • Minimum Gain GMIN Options: 1, 2, 5, 10 or 100 V/V • Common Mode Rejection Ratio (CMRR): 115 dB (typical, GMIN = 100)

MCP6N11

Abstract: MCP6N11-001 6N11001E MCP6N1 Wheatstone Bridge INA 125 P MCP6N11-005 MCP6H01 PICSTART Plus Wheatstone Resistive Bridge amplifier ina 114 sn1121
Contextual Info: MCP6N11 500 kHz, 800 µA Instrumentation Amplifier Features Description • Rail-to-Rail Input and Output • Gain Set by 2 External Resistors • Minimum Gain GMIN Options: 1, 2, 5, 10 or 100 V/V • Common Mode Rejection Ratio (CMRR): 115 dB (typical, GMIN = 100)

Philips PR02

Abstract: SAA5254P SAA5254P/E DIP40 SAA5244A SAA5249 SAA5254 teletext decoder teletext decoder character set Philips FA 291
Contextual Info: Philips Semiconductors Preliminary specification Integrated VIP and teletext decoder IVT1.1X SAA5254 FEATURES • Complete teletext decoder including page memory and FASTEXT links in a 40-pin DIP package • Automatic processing of extension packet 26 for widest

C8100

Abstract: DIP48 QFP64 SAA5244A SAA5247 SAA5249 SAA5249P SAA5254 SAA5281
Contextual Info: Philips Semiconductors Preliminary specification Integrateci VIP and Teletext with Background Memory Controller IVT1.1BMCX FEATURES • Complete teletext decoder featuring a background memory controller in a single 48-pin DIP package. Capable of storing of up to 512 teletext pages in an

DIN 4150

Abstract: TSM221
Contextual Info: TSM221 DUAL CM O S O PERATIONAL A M PLIFIE R AND DUAL CM O S COMPARATOR • SINGLE SUPPLY OPERATION FROM 2.7V TO 16V ■ LOW SUPPLY CURRENT: 500|^A total package with Vcc = 5V ■ LATCH - UP IMMUNITY OPERATIONAL AMPLIFIERS ■ RAIL TO RAIL INPUT AND OUTPUT

night-vision digital goggle

Abstract: Cyclone camera link Altera Cyclone IV FP-5500 altera Date Code Formats Cyclone 2 Fairchild Imaging Altera Digital Camera Development Platform focal plane array defective pixel correction test block diagram of Video graphic array
Contextual Info: Enabling Low-Power EO/IR System Development with FPGAs and Image- and Enabling Low-Power EO/IR System Development with FPGAs and Image- and Sensor-Processing IP WP-01129-1.0 White Paper Before embarking on the development of a next-generation electro-optical and infrared EO/IR

Contextual Info: MCP6N11 500 kHz, 800 µA Instrumentation Amplifier Features Description • Rail-to-Rail Input and Output • Gain Set by 2 External Resistors • Minimum Gain GMIN Options: 1, 2, 5, 10 or 100 V/V • Common Mode Rejection Ratio (CMRR): 115 dB (typical, GMIN = 100)

sot208a

Abstract: SE-1111 str w 5667 3M Philippines TL 2336 ic circuit diagram
Contextual Info: A 6 1993 YIP& 1 INTEGRATED CIRCUITS SAA5246A Integrated VIP and Teletext IV T 1 .0 Preliminary specification Supersedes data of August 1992 File under Integrated Circuits, IC02 January 1993 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Preliminary specification

SAA71111

Contextual Info: INTEGRATED CIRCUITS [M m SM EET f.; jiv: ”jndj Uni BUS SAA7111 Video Input Processor VIP Product specification Supersedes data of 1996 Oct 30 File under Integrated Circuits, IC22 Philips Semiconductors 1998 May 15 PHILIPS PHILIPS Philips Semiconductors

SAA5254P

Abstract: concoat rolling code philips SAA5254P R
Contextual Info: Philips Semiconductors Preliminary specification Integrated VIP and teletext decoder IVT1.1X „ &AAM54 FEATURES • Complete teletext decoder including page memory and FASTEXT links in a single 40-pin DIL package • Autom atic processing of extension packet 26 for

Contextual Info: Philips Semiconductors Product specification Video Input Processor VIP SAA7111 16.2.10 16.2.11 16.2.12 16.2.13 16.2.14 16.2.15 16.2.16 16.2.17 16.2.18 16.2.19 16.2.20 16.2.21 CONTENTS 1 FEATURES 2 APPLICATIONS 3 GENERAL DESCRIPTION 4 QUICK REFERENCE DATA

F917

Abstract: D7519 f-917 D-7519
Contextual Info: KZch Stck EAC EAE EG ENO EPC ER ERB ERI ERK FPS FPV FQS FWA FWB FWQ FWS FWT KE KEL KKR A RKD SAF SAL Kapillarrohrregler bei Spindelstellung Anschlag links gezeichnet 4.6 - 0.1 +100 1730 mm lg. TX / in 05 rv f t * r~ 1-/n r; 11 ffi E 3L Aca.160 SAP SAV SFD

32 pin eprom cdi

Contextual Info: DENSE-PAC MICROSYSTEMS 4 M EGABIT FLASH EEPROM DPZ128X32VI/DPZ128X32VIP DESCRIPTION: T he D P Z 128X32V I/V IP is a 4 m egabit C M O S FLA SH Electrically Erasable and Programmable nonvolatile memory module. The module is built with four 128K x 8 FLASH m em ory devices. The D P Z 1 2 8 X 3 2 V I/V IP can be user

3N50

Abstract: 2N1167A 2N2081 SDG603 2N2078 2N2286 2N2285 2N2287 2N2636 2N511
Contextual Info: 57 GERMANIUM POWER TRANSISTORS SA T U R A T IO r vl V O L T A G E S CURREIV IT G A IN @ T Y PE N U M B ER C ASE TYPE V CBO V V CEO V V EBO v V C ER V V C ES V hl:E MIN. M AX. V CE V I *C A V CE s V BE(s) V I V 'C A I >B A 15 AMP GE 3MAIM UM PIMP Observe (—) Negative Polarity

CSH120

Abstract: E4000000
Contextual Info: VIP400, VIP410 NRJED311206EN 03/2013 VIP400, VIP410 Electrical Network Protection Reference Manual NRJED311206EN 03/2013 www.schneider-electric.com The information provided in this documentation contains general descriptions and/or technical characteristics of the performance of the products contained herein. This documentation is not intended as a

Contextual Info: EPSON PF468-07 SMC6281 4-bit Single Chip Microcomputer • Core CPU Architecture • SVD Circuit/Comparator • Melody Circuit • DESCRIPTION The SMC6281 is an advanced single-chip CMOS 4-bit microcomputer consisting of the SMC6200 CMOS 4-bit core CPU. It also contains the ROM, RAM, LCD driver, time base counter and melody generation circuit.

6261M

Abstract: 6361M
Contextual Info: Semiconductor LM6161 /LM6261 /LM6361 High Speed Operational Amplifier General Description • High unity gain freq The LM6161 fam ily of high-speed am plifiers exhibits an e x­ cellent speed-pow er product in delivering 300 V/|os and 50 MHz unity gain stability w ith only 5 m A o f supply current.

k 3683

Contextual Info: M ay 1999 LM6161/LM6261/LM6361 High Speed Operational Amplifier General Description The LM6161 fam ily of high-speed am plifiers exhibits an e x­ cellent speed-pow er product in delivering 300 V/^is and 50 MHz unity gain stability w ith only 5 m A of supply current.

Contextual Info: scs-imOMSON TS512,A HIGH SPEED PRECISION DUAL OPERATIONAL AMPLIFIERS • LOW OFFSET VOLTAGE : 500^iV max. ■ LOW POWER CONSUMPTION ■ SHORT CIRCUIT PROTECTION ■ LOW DISTORTION, LOW NOISE ■ HIGH GAIN-BANDWIDTH PRODUCT ■ HIGH CHANNEL SEPARATION ■ ESD INTERNAL PROTECTION