VND01 Search Results

VND050

Abstract: vns0300
Contextual Info: li VND050 N-Channel Enhancement-Mode MOSFETs in c o rp o ra te d TYPE PACKAGE DEVICE Single TO-92 TO-226AA • VN50300L Single SOT-23 • VN50300T Single Chip • Available as VND01CHP TYPICAL CHARACTERISTICS Output Characteristics for Low Gate Drive 'd

Contextual Info: JU in c o rp o ra te d VND01 DIE N-Channel Enhancement-Mode MOS Transistor VND 01CHP* VN50300L VN50300T * Meets or exceeds specification for all part numbers listed below Source Pad 0.0034 0 . 086 3 0.0043 For additional design information please consult the

VNE003A

Abstract: VNC003A VND010B VNM005A Siliconix VHC010D VN5001A VN5001D VN5002A VNC010B
Contextual Info: - f a € tt « VN5001A VN5001D VN50Q2A VN5002D VNC003A SILI CON IX SILI CONIX SILI CON IX SILI CONIX SILI CON IX VNC010B SILI CON IX SILICONIX SILI CON IX VNCOI O O VNCÖ11B VNC01 ID VN0010B VND010D VND011B VND011D VNE003A VNE010B VNE010D VNEO1IB VNE011D

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

IRF0120

Abstract: VN0109N5 VN99AK IRF012 IRF0122 VN98AK svn98ak VN-99-A VN98AJ k604
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Clsa t, Min (S) Max (V) Max Max (s) (F) tf Max (s) Toper Max eC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 IXTH67N08 (A) IXTM67N08 (A)