VOLTAGE111 Search Results

Contextual Info: NTE524V42 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage680 V(RMS) Max. Applied Voltage420 V(DC) Max. Applied Voltage560 I(TM) Max.(A) Peak Current6.5k V(C) Nom. (V) Clamping Voltage1110 @I(PP) (A) (Test Condition)1.0m W(TM) Max.(J) Transient Energy160

Contextual Info: .M i P ln r k W n r k c ^ 3.3V SINGLE SUPPLY 1:9 PECL-TO-TTL SYNERGY PRELIMINARY SY10H641L SY100H641L SEM ICONDUCTOR FEATURES DESCRIPTION • 3 .3 V p o w e r s u p p ly ■ P E C L -to -T T L v e rs io n o f p o p u la r E C L in P S E111 ■ G u a ra n te e d lo w s k e w s p e c ific a tio n

TT 2246

Contextual Info: >4MCC PRELIMINARY SPECIFICATION S O N E T/S D H /A TM O C-48 8:1 TR AN SM ITTER FEATURES GENERAL DESCRIPTION • Micro-power Bipolar technology • Complies with ANSI, Bellcore, and ITU-T specifications • On-chip high-frequency PLL for clock generation • Supports 2.4 GHz OC-48

Contextual Info: PRELIMINARY CY7C1020 3 2 K x 16 Static RAM Features BLE is LOW, then data from I/O pins <l/0-| through l/0 8), is written into the location specified on the address pins (A0 through A14). If byte high enable (BHE) is LOW, then data from I/O pins (l/09 through l/0 16) is written into the location speci­

Contextual Info: CY7C197 256Kx 1 Static RAM Features vided by an active LOW chip enable CE and three-state driv­ ers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns Writing to the device is accomplished when the chip enable

ku 602 vc

Contextual Info: B U R R —B R O U J N B U CORP R R H E - B R O W D |l7 3 1 3 b S 0D14ûfc.5 ô I OPA121 N 1 Low Cost Precision OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW NOISE: 6 n V /V H z typ at 10kHz • OPTOELECTRONICS • LOW BIAS CURRENT: 5pA max • DATA ACQUISITION

15 pin to usb

Contextual Info: Pentium /!I, 6x86, K6 Clock Synthesizer/Driver for Desktop/ Mobile PCs with Intel 82430TX and 2 DIMMs or 3 SO-DIMMs Features • Mixed 2.5V and 3.3V operation • Complete clock solution to meet requirem ents of Pen­ tium®, Pentium® II, 6x86, or K6 motherboards

PR3000A

Abstract: MIPS R3000A
Contextual Info: PIPER” ÂPW ÂM CE Ö 1N IF @ 1M /Ä T B Ü [M ! FEATURES: • Highly Integrated single-chip RISC processor that contains the following: - CPU PR3000A based - FPA (PR3010A based) - Write/Read Buffer - Instruction and Data Caches - 32-bit Counters/Timers

SD5501

Abstract: TELEDYNE SD5501J
Contextual Info: TELEDYNE COMPONENTS 5ÖE D • û ilT b O a GODtiMS4 T SD5501 SEMICONDUCTOR N-CHANNEL DEPLETION-MODE 4-CHANNEL D-MOS FET ARRAY ORDERING INFORMATION Sorted Chips in Waffle Pack 16-Pin Ceramic Dual In-tine Package 16-Pin Plastic Dual In-Line Package SD5501CHP&#39;

relay Re 04501

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031
Contextual Info: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997

ASZ18

Contextual Info: H M 5 3 8 1 2 1 J P / Z P - 1 0 / 1 2 / 1 5 — Preliminary 131,072 x 8-Blt Multiport CMOS Video Random Access Memory • DESCRIPTION The HM538121 is a 1-Mbit multiport video RAM equipped with a 128-kword x 8-bit dynamic RAM and a 256-word x 8-bit SAM serial

BSN20 MARKING

Abstract: BSN20
Contextual Info: G en era l \J S e m i c o n d u c t o r _ BSN20 N-Channel Enhancement-Mode MOSFET % Vds 5 0 V RdS ON 6 f i Id 1 8 0 m A TO-236AB (SOT-23) •122(3.1) .110(2.8) 0.031 (0.8) .016 (0.4) T o p V ie w R+ 1— co m 0 035 (0.9) CO in m o o Pin Configuration

CY7B161-12PC

Abstract: b1615 B1616
Contextual Info: PRELIMINARY r ’V P P F Q O 16,384x4 Static RAM Separate I/O SEMICONDUCTOR Features Functional Description • High speed - 10 ns t* The CY7B161 and CY7B162 are high-performance BiCMOS static RAMs orga­ nized as 16,384 by 4 bits with separate I/O. These RAMs are developed by Aspen

A218h

Abstract: IS61C256AH-15JI IS61C256AH Rev IS61C256AH
Contextual Info: ISSI IS61C256AH IS61M256 32K x 8 HIGH-SPEED CMOS STATIC RAM AUGUST 1995 FEATURES DESCRIPTION • High-speed access time: 10, 12, 15, 20, 25 ns The ISSl IS61C256AH and IS61M256 are very high-speed, low power, 32,768 word by 8-bit static RAMs. They are fabricated using ISSI's high-performance CMOS technology.

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

7B164-15

Abstract: 910U
Contextual Info: _ PRELIM INARY SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • BiCMOS for optimum speed/power • High speed - 10 ns t* T he CY7B164 and CY7B166 are high-performance BiCMOS static RAMs organized as 16,384 x 4 bits. These RAMs are devel­

Contextual Info: E M M OPA121 ' Ií Tm^ J I í B U R R - BROW N« I Low Cost Precision ÆJffet OPERATIONAL AMPLIFIER APPLICATIONS FEATURES • LO W NOISE: 6 n V / V H z typ at 10kHz • O P TO ELEC TR O N IC S • LOW BIAS C U RR EN T: 5pA max • DATA ACQUISITION • LO W O F F S ET : 2mV max

CY7C186-45PC

Abstract: CY7C186-55PC 7C186-20PC
Contextual Info: CY7C185 CY7C186 CYPRESS SEMICONDUCTOR Features Automatic power-down when deselected CMOS for optimum speed/power High speed - 20 ns Low active power - 550 mW Low Standby Power - 110 mW TTL-compatible inputs and outputs Capable of withstanding greater than

J FET RF Cascode Input

Abstract: T431 Teledyne Semiconductor teledyne fet u
Contextual Info: TELEDYNE C O M P O N EN T S döE » MI Ö TlTbO H 000 3430 T - US'- b « -S '* SD2100 SEMICONDUCTOR_ N-CHANNEL DEPLETION-MODE D-MOS FET ORDERING INFORMATION TO-2Q6AF (TO-72 Hermetic Package SD2100DË with Shorting Ring on lead«

diagram of ic 7941

Abstract: Teledyne Semiconductor
Contextual Info: eäE TELEDYNE COMPONENTS Ir M Jæ Æ D ÜTL7bü2 QOUb4b7 ? m • Æ TZ5 9 1 1 SEMICONDUCTOR N-CHANNEL DEPLETION-MODE DUAL D-MOS FET ORDERING INFORMATION TQ-78 Hermetic Package TZ5911HD SO-8 Surface Mount Package T259110V FEATURES APPLICATIONS ■ ■ ■ ■

Contextual Info: fax id: 3553 7 ^ CYPRESS P R E L IM IN A R Y C Y 2 3 1 0 A N Z 3.3V SDRAM Buffer for Mobile PCs with 4 SO-DIMMs Features Functional Description One input to 10 output buffer/driver Supports up to four SDRAM SO-DIM Ms Two additional outputs for feedback l2C interface for output control

Contextual Info: 1SMC100 Diodes Unidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage100 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage100 I(PPM) Max.(A)Pk.Pulse Current8.4

Contextual Info: * S O N E T /S D H /A T M O C - 1 2 C L O C K SYNERGY RECOVERING TRAN SC EIVER '.M iC O N D U C T O R FE A T U R E S • ■ A complete SONET/SDH Transmitter & Receiver ■ Complies with Bellcore, ITU/CCITT and ANSI specifications ■ Two on-chip PLLs: One for clock generation &

HYUNDAI i10

Contextual Info: CY62256V25 PRELIMINARY 32K X 8 2.5V Static RAM Features active LOW output enable OE and three-state drivers. The device has an automatic power-down feature, reducing the power consumption by more than 98% when deselected. • Single 2.5V power supply • Ideal for low-voltage and low-power cache memory