VOLTAGE121 Search Results

Contextual Info: VSAC14DK121 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage121 V(RMS) Max. Applied Voltage75 V(DC) Max. Applied Voltage100 I(TM) Max.(A) Peak Current4.5k V(C) Nom. (V) Clamping Voltage200 @I(PP) (A) (Test Condition)50 W(TM) Max.(J) Transient Energy20

Contextual Info: 724 BU R R -BR O W N * E * 1 QUAD ISOLATED D C /D C CONVERTER FEATURES A P P L IC A T IO N S • QUAD ISOLATED +8V OUTPUTS • MEDICAL EQUIPMENT • HIGH BREAKDOWN VOLTAGE. 3000V TEST • INDUSTRIAL PROCESS CONTROL • LOW LEAKAGE CURRENT. < I| A AT 240V/60HZ

ku 602 vc

Contextual Info: B U R R —B R O U J N B U CORP R R H E - B R O W D |l7 3 1 3 b S 0D14ûfc.5 ô I OPA121 N 1 Low Cost Precision OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW NOISE: 6 n V /V H z typ at 10kHz • OPTOELECTRONICS • LOW BIAS CURRENT: 5pA max • DATA ACQUISITION

PR3000A

Abstract: MIPS R3000A
Contextual Info: PIPER” ÂPW ÂM CE Ö 1N IF @ 1M /Ä T B Ü [M ! FEATURES: • Highly Integrated single-chip RISC processor that contains the following: - CPU PR3000A based - FPA (PR3010A based) - Write/Read Buffer - Instruction and Data Caches - 32-bit Counters/Timers

Contextual Info: SMBJ75CA Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage87.7 @I(R) (A) (Test Condition)1m V(RWM) (V) Work.Pk.Rev.Voltage75 I(PPM) Max.(A)Pk.Pulse Current4.9

Contextual Info: 1SMB75CAT3 Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage @I(R) (A) (Test Condition)1m V(RWM) (V) Work.Pk.Rev.Voltage75 I(PPM) Max.(A)Pk.Pulse Current4.9

SY100E111U

Abstract: sk a 3050 c ay 950
Contextual Info: 5V/3.3V 1:9 D I F F E R E N T I A L Ï.Y10E1 SYNERGY C L O C K D R I V ER w/ o E N A B L E S E M IC O N D U C T O R 11A/ L • ; y i o o E i 11 a /l D E S C R IP T IO N FEATURES ■ 3 .3 V an d 5V p o w e r s u p p ly o p tio n s ■ 2 0 0 p s p a rt-to -p a rt sk ew

4556 ad

Abstract: MS6399-45FC
Contextual Info: MOSEL MS6399 PRELIMINARY 32K x 8 SRAM with an Address and Data Multiplexer FEATURES DESCRIPTION • Supports direct interface to high-speed m icro­ controllers • On-chip transparent address latches • 45/70/100 ns access tim es available support high­

MS6264AL-45PC

Abstract: M56264 MS6264AL-45NC
Contextual Info: MOSEL MS6264A 8K x 8 High Speed CMOS Static RAM FEATURES DESCRIPTION • High speed - 4 5 /5 5 ns M ax. T h e M O S E L M S 6 2 6 4 A is a high perform ance, low power C M O S static R A M organized as 8 1 9 2 words by 8 bits. Th e device supports easy m em ory expansion with both an

S-8812

Abstract: S8812B
Contextual Info: MOSEL / _ M S 8 8 1 2 8 / 128K x 8 CMOS Static RAM Module FEATURES DESCRIPTION • Compatible with JEDEC standard pinout for monolithic megabit 128K x 8 The Mosel MS88120 is a 1 Megabit 1,048,576 bits static random access memory module organized as 128K

Contextual Info: P4C163/P4C163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS -FEATURES • Full CMOS, 6T Cell ■ Single 5V±10% Power Supply ■ High Speed Equal Access and Cycle Times - 25/35ns (Commercial)

Contextual Info: PERFORMANCE SEMICONDUCTOR 20E D • 7 0 b 2 5 ci? 0 0 0 0 5 7 = } 7 P4C168/P4C168L, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS SCRAMS FEATURES Three Options - P4C168/L Low Power Standby Mode - P4C169 Fast Chip Select Control - P4C170 Fast Chip Select, Output Enable

Contextual Info: P4C1681, P4C1682 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS SCRAMS FEATURES • Full CMOS, 6T Cell ■ High Speed (Equal Access and Cycle Times) -12/15/20/25/35 ns (Commercial) ■ Low Power Operation (Commercial) -7 1 5 mW Active-1 2 ,1 5 - 550 mW Active - 20/25/35

Contextual Info: P4C150 ULTRA HIGH SPEED 1K x 4 RESETTABLE STATIC CMOS RAM SCRAM FEATURES • Full C M O S, 6T Cell Three-State Outputs ■ High Speed (Equal Access and Cycle Times) -1 0 /1 2 /1 5 /2 0 /2 5 ns (C om m ercial) Fully TTL Com patible Inputs and O utputs Produced w ith PACE II Technology

Contextual Info: P4C116 ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS -FEATURES • Full CMOS, 6T Cell ■ Output Enable Control Function ■ High Speed Equal Access and Cycle Times -10/12/15/20/25/35 ns (Commercial) -15/20/25/35 ns (Military)

Contextual Info: P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS SCRAMS FEATURES • Full CMOS, 6T Cell ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial) ■ Low Power operation (Commercial) - 715 mW Active -10/12 - 550 mW Active - 15/20/25

Contextual Info: E M M OPA121 ' Ií Tm^ J I í B U R R - BROW N« I Low Cost Precision ÆJffet OPERATIONAL AMPLIFIER APPLICATIONS FEATURES • LO W NOISE: 6 n V / V H z typ at 10kHz • O P TO ELEC TR O N IC S • LOW BIAS C U RR EN T: 5pA max • DATA ACQUISITION • LO W O F F S ET : 2mV max

Contextual Info: BZW50-68B Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage84 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage68 I(PPM) Max.(A)Pk.Pulse Current41

Contextual Info: SYNERGY 3. 3V DU AL T T L - t o - D I F F E R E N T I A L PECLTRANSLATOR SY 10 E L T 22 L SY100ELT22L S E M IC O N D U C T O R DESCRIPTION FEATURES 300ps typical propagation delay T he S Y 1 0 /1 0 0 E L T 2 2 L a re d u a l T T L -to -d iffe re n tia l PECL tran sla to rs with +3.3V pow er supply. Because

GE 2L

Abstract: sk 3050 c SK 3050 J
Contextual Info: * SYNERGY 5V /3.3V 1 :9 D IF F E R E N T IA L Clockworks c l o c k d r i v e r w / o e n a b l e s y io o e ! !!^ S E M IC O N D U C T O R FEATURES DESCRIPTION • 3.3 V a n d 5 V p o w e r s u p p ly o p tio n s ■ 2 0 0 p s p a rt-to -p a rt sk ew

u3844

Abstract: 166Q P4C168 P4C169 P4C170
Contextual Info: PERFORMANCE SEMICONDUCTOR SOE D • TObeS^? ÜD01fl2fl Qfl3 « P S C P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS SCRAMS FEATURES Three Options - P4C168 Low Power Standby Mode - P4C169 Fast Chip Select Control - P4C170 Fast Chip Select, Output Enable

Contextual Info: fax id: 3553 7 ^ CYPRESS P R E L IM IN A R Y C Y 2 3 1 0 A N Z 3.3V SDRAM Buffer for Mobile PCs with 4 SO-DIMMs Features Functional Description One input to 10 output buffer/driver Supports up to four SDRAM SO-DIM Ms Two additional outputs for feedback l2C interface for output control

Contextual Info: SMCJ75CA Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage87.7 @I(R) (A) (Test Condition)1m V(RWM) (V) Work.Pk.Rev.Voltage75 I(PPM) Max.(A)Pk.Pulse Current12.4

ku 602 vc

Abstract: ftl2k
Contextual Info: b ur r - broüin corp 34E » 17313b5 DOlfilflB 5 H BUB 7 =-79-/S“ OPA404 B U R R -B R O W N • *= * ■ = * ! Quad High-Speed Precision Difet®OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • WIDE BANDWIDTH: 6.4MHz