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VOOQ Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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67s18258Contextual Info: for spcc. confirrnation SUN HM67S18258 Series 262144 words x 18 bits Synchronous Fast Static R A M P ro d u c t P review Rev. 3 HITACHI Features Dec. 10 1996 Pin A rrangem ent 3,3 V ± 5 % Operation LV C M O S C om patible Input and Output 1 2 ro O o OOo |
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HM67S18258 HM57S18258ESP-6 67S18258BP-7 127mm BP-119F) 67S18258BP-7H PMMSCTD011 67s18258 | |
BP-119Contextual Info: HM67S36130 Series 131,072-words x 36-bits Synchronous Fast Static RAM HITACHI ADE-203-659A Z Product Preview Rev. 1 Feb. 21, 1997 Features • 3.3V ± 5% Operation • LVCMOS Compatible Input and Output • Synchronous Operation • Internal self-timed Late Write |
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HM67S36130 072-words 36-bits ADE-203-659A HM67S36130BP-7 BP-119) HM67S18258BP-7H HM67S18258BP-7 BP-119 | |
9436aContextual Info: ADVANCE MT55L128L18P, MT55L64L32P, MT55L64L36P 2.25Mb ZBT SRAM 3 .3V V od, Selectable Burst Mode FEATURES • • • • • • • • • • • • • • • • • High frequency and 100 percent bus utilization Fast cycle times: 7ns, 7.5ns, 8.5ns and 10ns |
OCR Scan |
12BKx MT55L128L18P 9436a | |
1P 2F MARKINGContextual Info: ADVANCE |v i i c 2 5 6 K x 1 8 /1 2 8 K x 36 3 . 3 V Vod, HSTL. PIPELINED C L A Y M O R E SRAM :r o n R M h tt. U I V I U M T57L256H 18P M T57L128H 36P d FEATURES • • • • • • • • • • • • • • • • • • • • • Fast cycle times: 4.4ns, 5ns, 5.5ns, 6ns and 7ns |
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T57L256H T57L128H 18/126K MT57L256H18P C1996, 1P 2F MARKING | |
82430TX
Abstract: CY2278A CPU-63 3D16E Jittek
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CY2278Ae 82430TX CY2278A CPU-63 3D16E Jittek | |
KM4132G271BContextual Info: KM4132G271B CMOS SGRAM 128K X 32Bit X 2 Banks Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION • • • • The KM4132G271B is 8,388,608 bits synchronous high data rate Dynamic RAM organized as 2 x 131,072 words by 32 bits, fabricated with SAMSUNG'S high performance CMOS technol |
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KM4132G271B 32Bit KM4132G271B | |
WKX 54
Abstract: WKX 62 WKX vll
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KM732V688/L 64Kx32 KM732V688/L WKX 54 WKX 62 WKX vll | |
Contextual Info: KM736V695/L 64Kx36 Synchronous SRAM 64Kx36~Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The KM736V695/L is a 2,359,296-bit Synchronous Static Ran dom Access Memory designed for high performance second |
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KM736V695/L 64Kx36 KM736V695/L 296-bit 36bits | |
6n7p
Abstract: SAL3
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KM736FV4011 KM718FV4011 128KX36 256Kx18 128KX36 14mmx22mm) KM736FV4011H-44 6n7p SAL3 | |
Contextual Info: KM718V895 256Kx18 Synchronous SRAM 256Kx18-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • 2 Stage Pipelined Operation With 4 Buret • On-Chip Address Counter. • Self-Timed Write Cyde. • On-Chip Address and Control Registers. |
OCR Scan |
KM718V895 100-TQFP-1420A 256Kx18 25SKx1S 256KX18 | |
Contextual Info: IBM043611 ULAB IBM041811 ULAB Prelim inary 32K x 36 & 64K x 18 SRAM Features • 32K x 36 or 64K x 18 organizations • Registered outputs • 0.45 Micron CMOS technology • Asynchronous Output Enable and Power Down Inputs • Synchronous pipeline mode of operation with |
OCR Scan |
IBM043611 IBM041811 GA14-4669-02 | |
ci 8602 gn
Abstract: ci 8602 gn block diagram 12v dc cdi schematic diagram L146 IC 8602 gn Alc201A 12v dc cdi schematic diagram for cdi tk 1838 ir m6502 IR TK 1838
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C237D87N STS-05-A 71-M4000-D03) 10MIL STS-05-A ci 8602 gn ci 8602 gn block diagram 12v dc cdi schematic diagram L146 IC 8602 gn Alc201A 12v dc cdi schematic diagram for cdi tk 1838 ir m6502 IR TK 1838 | |
CLAA141XB01
Abstract: 71-22T00-D03 TLR303 LP141X5 cy4h Z768 LP133X7 IK04 JC283 ht13x
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71-22T00-D03) MDI12 HA122_ HAH21, RB751V PR104 DTC114EUA PC105 2N7002 PC112 CLAA141XB01 71-22T00-D03 TLR303 LP141X5 cy4h Z768 LP133X7 IK04 JC283 ht13x | |
TC227
Abstract: IR sensor LFN 2N700Z S14800 U53D LS 2027 audio amp a-b osai em 231 rtd aa2c SOT23-5 LM2729
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855PM LAY10 LM27281 LP2996 1AX1737 LM2729 SI4800 TC227 IR sensor LFN 2N700Z S14800 U53D LS 2027 audio amp a-b osai em 231 rtd aa2c SOT23-5 LM2729 | |
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Contextual Info: ADVANCE M i n P r i M I •■i— i - i h - i i ' w 256K X 18, 128K X 32/36 3.3V I/O, PIPELIN ED , DCD S Y N C B U R S T SR A M MT58LC256K18C6, MT58LC128K32C6, MT58LC128K36C6 SYNCBURST SRAM 3.3V Supply, Pipelined, Burst Counter and Double-Cycle Deselect SYNCBURST SRAM |
OCR Scan |
MT58LC256K18C6, MT58LC128K32C6, MT58LC128K36C6 | |
Contextual Info: TLVH431A-Q1 TLVH431B-Q1 SLVS906B – DECEMBER 2008 – REVISED MARCH 2011 www.ti.com LOW-VOLTAGE ADJUSTABLE PRECISION SHUNT REGULATORS Check for Samples: TLVH431A-Q1, TLVH431B-Q1 FEATURES 1 • • • Qualified for Automotive Applications Low-Voltage Operation: Down to 1.24 V |
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TLVH431A-Q1 TLVH431B-Q1 SLVS906B TLVH431A-Q1, TLVH431 | |
"absg"Contextual Info: 64Kx18 Synchronous SRAM KM718V687 64Kx18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The KM718V687 is a 1,179,648 bits Synchronous Static Ran dom Access Memory designed to support zero wait state per |
OCR Scan |
KM718V687 64Kx18-Bit 100-TQFP-1420A 64Kx18 KM718V687 "absg" | |
DTA 2030Contextual Info: TLVH431A-Q1 TLVH431B-Q1 SLVS906B – DECEMBER 2008 – REVISED MARCH 2011 www.ti.com LOW-VOLTAGE ADJUSTABLE PRECISION SHUNT REGULATORS Check for Samples: TLVH431A-Q1, TLVH431B-Q1 FEATURES 1 • • • Qualified for Automotive Applications Low-Voltage Operation: Down to 1.24 V |
Original |
TLVH431A-Q1 TLVH431B-Q1 SLVS906B TLVH431A-Q1, TLVH431 DTA 2030 | |
5-pen pc technologyContextual Info: 32Kx32 Synchronous SRAM KM732V599A/L 32Kx32-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • 2Stage Pipelined operation with 4Burst. • On-Chip Address Counter. The KM732V599A/L is a 1,048,576-bit Synchronous Static |
OCR Scan |
KM732V599A/L 32Kx32 32Kx32-Bit KM732V599A/L 576-bit 5-pen pc technology | |
XC5LContextual Info: KMM466S204CT 144pin SDRAM SODIMM KMM466S204CT SDRAM SODIMM 2Mx64 SDRAM SODIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S204CT Is a 2M bit x 64 Synchronous Dynamic RAM high density memory module. The SamsunQ |
OCR Scan |
KMM466S204CT KMM466S204CT 144pin 2Mx64 1Mx16 KMM486S204CT 400mII 144-pin XC5L | |
Contextual Info: KM736V687 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • ■ • • • • The KM736V687 is 2,359,296 bits Synchronous Static Random Access Memory designed to support zero wait state perfor |
OCR Scan |
KM736V687 64Kx36-Bit 100-TQFP-1420A 64Kx36 KM736V687 | |
PC2500AH
Abstract: PC2500 12-pin stereo amplifier GD4C5423 22NEC UPC2500A
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b42752S uPC2500A iPC2500A 12-lead PC2500A P12HP-254B2 323-Oou PC2500AH PC2500 12-pin stereo amplifier GD4C5423 22NEC | |
m5m5v1132
Abstract: M5M5V1132A m5m5v1132agp
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OCR Scan |
1048576-BIT 32766-WQRD 32-BIT) M5M5V1132A 32768-words 32-bit. m5m5v1132 m5m5v1132agp | |
Contextual Info: S â fllb b Z G ÜEISbD 3Tb PRELIMINARY CY2278A Pentium and Pentium II™ Compatible Clock Synthesizer/Driver for Mobile PCs Features Functional Description • Mixed 2.5V and 3.3V operation • Complete clock solution to meet requirements of mo bile Pentium™ and Pentium II™ motherboards |
OCR Scan |
CY2278A CY2278A 82430TX |