VP210 Search Results

Contextual Info: VP2106 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability

VP2106

Abstract: VP2106N3 VP2110 VP2110K1 VP2110ND
Contextual Info: VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-236AB* Die† -60V 12Ω -0.5A VP2106N3 — — -100V 12Ω -0.5A — VP2110K1 VP2110ND Product marking for SOT-23:

VP2106

Contextual Info: VP2106 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) VP2106 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

VP2110N3

Contextual Info: SUPERTEX INC blE D • 87732^ DDD32bS ÌSfl « S T X Super te x inc. VP21A P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVoss / BVdos Rd8 ON (max) If Standard Commercial Devices Order Number / Package TO-92 DICE* -40V 120 -0.5A VP2104N3

Contextual Info: VP2106 VP2110 Superte jc¡ne. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ BV Order Number / Package ^DS ON ' d (ON) (max) (min) TO-92 TO-236AB* Diet 12fi -0.5A VP2106N3 — VP2106ND P1 A * VP2110ND where * = 2-week alpha date code

Contextual Info: Supertex inc. VP2106 P-Channel Enhancement-Mode Vertical DMOS FETs General Description Features ►► ►► ►► ►► ►► ►► ►► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,

Contextual Info: Bothhandusa.com 10/100 BASE-TX VOICE OVER IP MAGNETICS P/N: VP2109A DATA SHEET Page : 1/1 Feature ! ! ! ! ! ! ! IEEE 802.3af/ANSI X3.263 compliant performance. 350mA current capability. Designed for IP phone or switch applications. Compact footprint. The mold offer Auto MDIX capability.

Contextual Info: VP2106 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2106 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

Contextual Info: VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-236AB* Die† Product marking for SOT-23: -60V 12Ω -0.5A VP2106N3 — — P1A❋ -100V 12Ω -0.5A

Contextual Info: ^ Supertex inc. VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs BVdss/ ^DS ON B V dos (max) -60V 120 -100V If Ordering Information_ _ _ -0.5A -0.5A 120 Order Number / Package TO-92 DICE* TO-236AB* VP2106N3 VP2106ND - VP2110ND VP2110N3

SIVP

Abstract: VP2106
Contextual Info: VP2106 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex VP2106 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

MARKING P1a

Abstract: VP2110N3
Contextual Info: = J U r — J J j S VP2106 VP2110 . P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON Order Number / Package I d (ON) BVdgs (max) (min) TO-92 DICE+ TO-236AB* -60V 12Q -0.5A VP2106N3 VP2106ND - -100V 12Q -0.5A VP2110N3 VP2110ND

VP2106

Contextual Info: Supertex inc. VP2106 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) VP2106 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

VP2106

Abstract: VP2106N3 VP2110 VP2110K1 VP2110ND
Contextual Info: VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-236AB* Die† Product marking for SOT-23: -60V 12Ω -0.5A VP2106N3 — — P1A❋ -100V 12Ω -0.5A

VP2110N3

Abstract: VP21A vp2104
Contextual Info: VP21A inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices II Order Number / Package BV DSS/ R d S O N BV dgs (max) TO-92 DICE+ -40V 12Î2 -0.5A VP2104N3 VP2104ND -60V 12 £! -0.5A VP2106N3 VP2106ND -100V 12Q

Contextual Info: VP2106 VP2110 Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / ^DS ON ^D(ON) b v dgs (max) (min) TO-92 TO-236AB* Diet -60V 12& -0.5 A VP2106N3 — — -100V 12& -0.5 A — VP2110K1 VP2110ND Product marking for SOT-23:

Contextual Info: Bothhandusa.com 10/100BASE-TX VOICE OVER IP MAGNETICS P/N: VP2109B DATA SHEET Page : 1/1 Feature ! ! ! ! ! ! ! IEEE 802.3af/ANSI X3.263 compliant performance. 350mA current capability. Designed for IP phone or switch applications. Compact footprint. The mold offer Auto MDIX capability.

Contextual Info: Bothhandusa.com 10/100 BASE–TX VOICE OVER IP MAGNETICS P/N: VP2109 DATA SHEET Page : 1/1 Feature ! ! ! ! ! ! ! IEEE 802.3af/ANSI X3.263 compliant performance. 350mA current capability. Designed for IP phone or switch applications. Compact footprint. The model offer Auto MDIX capability.

transistors N3

Contextual Info: VP2106 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2106 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

VP2110N3

Abstract: VP2106 VP2106N3 VP2106ND VP2110 VP2110K1 VP2110ND 944 SOT23
Contextual Info: VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 DICE† TO-236AB* Product marking for SOT-23: -60V 12Ω -0.5A VP2106N3 VP2106ND - P1A❋ -100V 12Ω

VP2110

Abstract: VP2110K1 VP2110ND VP2106 VP2106N3 VP2106ND
Contextual Info: VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-236AB* Die† Product marking for SOT-23: -60V 12Ω -0.5A VP2106N3 — VP2106ND P1A❋ -100V 12Ω

Backlight Drivers

Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
Contextual Info: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs

WH17

Abstract: BC118 VP2122 bc102 "SERIES MELPS 740" BC117 transistor BC118 bbc cs5 BC78 "MELPS 740"
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

1933E

Abstract: caption 1AB3 25816 bc136 BC154 CR16 mitsubishi cr64 cr65 VP1160 vp251
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog