VP2206N2 Search Results
VP2206N2 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
---|---|---|---|---|---|---|---|
VP2206N2 | Supertex | 60V P-channel enhancement-mode vertical DMOS FET | Original | 466.04KB | 4 |
VP2206N2 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: VP2206N2 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)1.6 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)6 Minimum Operating Temp (øC)-55 |
Original |
VP2206N2 Junc-Case20 | |
VP2210ND
Abstract: VP2210N2
|
OCR Scan |
VP2206 vp22io -100V VP2206N2 VP2210N2 VP2206N3 VP2210N3 VP2206ND VP2210ND VP2206/V VP2210ND VP2210N2 | |
Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dgs RdS ON (max) -60V 0.9£2 Order Number / Package If b v dss/ -4A TO-39 VP2206N2 TO-92 Diet VP2206N3 VP2206ND ÎM IL visua l screening a vailable Advanced DMOS Technology |
OCR Scan |
VP2206 VP2206N2 VP2206N3 VP2206ND | |
Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RdS<ON -60V 0.9Q max) Order Number / Package TO-92 TO-39 If BVoss / BVoos -4A VP2206N2 Diet VP2206ND VP2206N3 *MJL visual screening available Advanced DMOS Technology |
OCR Scan |
VP2206 VP2206N2 VP2206N3 VP2206ND | |
VP2210Contextual Info: VP2206 VP2210 Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package ^OS ON TO-39 TO-92 DICEt -60V 0.90. -4A VP2206N2 VP2206N3 VP2206ND -100V 0.9Q -4A VP2210N2 VP2210N3 VP2210ND If BVoss / BV bqs (max) * MIL visual screening available |
OCR Scan |
VP2206 VP2210 VP2206N2 VP2206N3 VP2206ND -100V VP2210N2 VP2210N3 VP2210ND VP2206/VP2210 VP2210 | |
VP2210
Abstract: VP2206N2 VP2206 VP2206N3 VP2206ND VP2210N2 VP2210N3 VP2210ND To-92 60w 2a
|
Original |
VP2206 VP2210 VP2206N2 VP2206N3 VP2206ND -100V VP2210N2 VP2210N3 VP2210ND VP2210 VP2206N2 VP2206 VP2206N3 VP2206ND VP2210N2 VP2210N3 VP2210ND To-92 60w 2a | |
VP2206N3
Abstract: VP2206 VP2206N2
|
Original |
VP2206 VP2206N2 VP2206N3 VP2206N3 VP2206 VP2206N2 | |
mos die
Abstract: VP2206 VP2206N2 VP2206N3 VP2206ND
|
Original |
VP2206 VP2206N2 VP2206N3 VP2206ND de-10 mos die VP2206 VP2206N2 VP2206N3 VP2206ND | |
vp22a
Abstract: VP2210N2
|
OCR Scan |
VP2204N3 VP2206N3 VP2210N3 VP2204ND VP2206ND VP2210ND -100V VP2204N2 VP2206N2 VP2210N2 vp22a VP2210N2 | |
TN0604N3
Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
|
Original |
2N6659 VN2210N2 TN0104N3 2N7007 TN5325N3 AN0332 AP0332 VN2110K1 BSS123 DN2535 TN0604N3 HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex | |
Contextual Info: VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing |
Original |
VP2206 DSPD-3TO39N2, A070808. VP2206 DSPD-3TO92N3, D070808. DSFP-VP2206 A072808 | |
2206N2Contextual Info: VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing |
Original |
VP2206 DSFP-VP2206 B122608 2206N2 | |
PLCC-6 5050
Abstract: P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG
|
Original |
SA146RS PLCC-6 5050 P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG | |
Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability |
Original |
VP2206 VP2206 DSFP-VP2206 D031411 | |
|
|||
Contextual Info: VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing |
Original |
VP2206 DSFP-VP2206 B091508 | |
2206n2
Abstract: SIVP VP2206 VP2206N2 B06030
|
Original |
VP2206 VP2206 DSFP-VP2206 B060309 2206n2 SIVP VP2206N2 B06030 | |
VP2206N2
Abstract: VF52 2206N2 VP2206 vp5206
|
Original |
VP2206 VP2206 DSFP-VP2206 D031411 VP2206N2 VF52 2206N2 vp5206 | |
2206N2Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► High input impedance and high gain |
Original |
VP2206 VP2206 DSFP-VP2206 E082313 2206N2 | |
Contextual Info: blE » SUPERTEX INC • fl?732c15 OQOBEb^ ST3 « S T X VP22A Super te x inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BV oss/ R d S ON • d(0N) B V DGS (max) (min) TO-39 Order Number / Package TO-92 DICE* |
OCR Scan |
VP22A VP2204N2 VP2204N3 VP2204ND VP2206N2 VP2206N3 VP2206ND -100V VP2210N2 VP2210N3 | |
HV50530PG
Abstract: hv9910p-g TN0604N3 HV5808PJ VN2460N8-G HV-801 HV801 VP0120N5 VN0360N5 TN0520N3
|
Original |
2N6659 2N7007 AN0332CG AP0332CG BSS123 DN2535N2 DN2540N2 DN2620N3 DN2624N3 DN2625K6-G HV50530PG hv9910p-g TN0604N3 HV5808PJ VN2460N8-G HV-801 HV801 VP0120N5 VN0360N5 TN0520N3 |