VQ3001 Search Results

VQ3001

Contextual Info: lJì Supertex inc. TQ3001 VQ3001 VQ7254 Surface Mount N- and P-Channel Quad Power MOSFET Arrays Ordering Information Standard Commercial Devices V ^ D S ON GS |ttl) Order Number / Package (max) (max) Q1 + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 14-Pin C-Dip*

11105 IC

Abstract: ic 11105 circuits voltage
Contextual Info: Tem ic VQ3001J/3001P Siliconix N-/P-Channel Enhancement-Mode MOS Transistor Arrays Product Summary fDS on M ax (£2) V(BR)DSS M i“ (Y) I d (A) . Vos(»h) (V) N-Channel 30 1 @ V GS = 12 V 0.8 to 2.5 0.85 P-Channel -3 0 2 @ V GS= - 1 2 V - 2 to -4 .5 -0 .6

VN0300M

Abstract: VN0300D VQ7254J VQ7254P 25XX VP1001P VQ1001J VQ3001J VQ3001P VNMH03
Contextual Info: Pulse width 80^s—300^s, Duty cycle 1%, Tc=25°C Part Numbers: VN0300D, VN0300M, VP1001P, VQ1001J, Segments 1 and 3: VQ3001P, VQ3001J, VQ7254P, VQ7254J Leakage Currents Ohmic Region T c — CASE TEMPERATURE (°C) ON Resistance Characteristics Temperature Effects on rps(on)

VQ3001J

Abstract: VQ3001P
Contextual Info: VQ3001J/3001P N-/P-Channel Enhancement-Mode MOS Transistor Arrays Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 Features Benefits Applications

Contextual Info: VQ3001N6 Transistors N-Ch & P-Ch Enhancement Mode MOSFET Array Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)30 I(D) Max. (A)-.65 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)3.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.5

Contextual Info: VQ3001N7 Transistors N-Ch & P-Ch Enhancement Mode MOSFET Array Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)30 I(D) Max. (A)-.65 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)3.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)2.0

VQ3001

Abstract: TQ3001 VQ3001N6 VQ7254 VQ7254N6 FAST DMOS FET Switches
Contextual Info: VQ3001 VQ7254 N- and P-Channel Quad Power MOSFET Arrays Ordering Information VGS th (max) RDS (ON) (max) Q1 + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 40V 3.0Ω 2.0V -3.0V VQ3001N6 20V 3.0Ω 2.0V -3.0V VQ7254N6 BVDSS / BVDGS Order Number / Package

MOSFET 923 54

Abstract: N06L vq3001 quad N-Channel MOSFET dip package 40v N- and P-Channel dip
Contextual Info: TQ3001 VQ3001 VQ7254 Supertax inc. N- and P-Channel Quad Power MOSFET Arrays Ordering Information vYa s th R ds (ON) (max) Q l + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 40V 3.0Q 2.0V -3.0V VQ3001N6 — 40V 3.o n 1.6V -2.4V — TQ3001N7 20V 3.0Q 2.0V

Contextual Info: Temic VQ3001J/3001P S e m i c o n d u c t o r s N-/P-Ch. Enhancement-Mode MOSFET Transistor Arrays Product Summary V BR DSS M in (V ) r o s i » ) M a x (fi) V e s o u ) (V ) I d (A ) N -Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Chan nel -3 0 2 @ V Gs = - 1 2 V

Contextual Info: VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 FEATURES BENEFITS APPLICATIONS

9907

Abstract: 9907 a VQ3001J VQ3001P
Contextual Info: VQ3001J/3001P Siliconix NĆ/PĆChannel EnhancementĆMode MOS Transistor Arrays Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) NĆChannel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 PĆChannel -30 2 @ VGS = -12 V -2 to -4.5 -0.6 Features Benefits

N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V

Abstract: VQ3001 P-Channel mosfet 40V TQ3001N7 20V P-Channel Power MOSFET DIODE S4 75a p mosfet VQ7254N7 VQ7254N6 DIODE S4 41
Contextual Info: TQ3001 VQ3001 VQ7254 Surface Mount N- and P-Channel Quad Power MOSFET Arrays Ordering Information VGS th (max) RDS (ON) (max) Q1 + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 14-Pin C-Dip* 40V 3Ω 2.0V -3.0V VQ3001N6 VQ3001N7 20 Terminal LCC Quad VQ3001NF

TQ3001

Abstract: VQ3001 VQ3001N6 VQ7254 VQ7254N6 Supertex Quad quad N-Channel MOSFET dip package 2NQ1
Contextual Info: VQ3001 VQ7254 Supertex inc. N- and P-Channel Quad Power MOSFET Arrays Ordering Information V GS th R d S (ON) b v dss/ Order Num ber / Package (max) (max) Q1 + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 40V 3.0Î2 2.0V -3.0V VQ3001N6 20V 3.0Î2 2.0V

Contextual Info: VQ3001J Transistors N-Ch & P-Ch Enhancement Mode MOSFET Array Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)600m I(DM) Max. (A) Pulsed I(D)370m @Temp (øC)100 IDM Max (@25øC Amb)2 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)2.0

VQ3001/VQ7254

Contextual Info: TQ3001 VQ3001 VQ7254 Surface Mount | N- and P-Channel Quad Power MOSFET Arrays Ordering Information R b v dss/ dS VGS th (ON) Order Number / Package (max) (max) Q1 + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 14-Pin C-Dip* 20 Terminal LCC Quad 40V 3Q

vq3001

Contextual Info: m essb VQ3001 s e rie s N- and P- Channel Enhancement-Mode _ MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR DSS VQ3001J 30/-30 ' X VQ3001P 30/-30 1 TOP VIEW •d (A) PACKAGE N = 1 P = 2 N = 0.85 P = 0.6 Plastic

VQ3001J

Abstract: VQ3001P 70221
Contextual Info: VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 FEATURES BENEFITS APPLICATIONS

Contextual Info: VQ3001NF Transistors N-Ch & P-Ch Enhancement Mode MOSFET Array Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)30 I(D) Max. (A)-.65 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)3.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0

70221

Abstract: mosfet vq3001p VQ3001J VQ3001P
Contextual Info: VQ3001J/3001P N-/P-Ch. Enhancement-Mode MOSFET Transistor Arrays Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 Features Benefits Applications

Contextual Info: VQ3001P Transistors N-Ch & P-Ch Enhancement Mode MOSFET Array Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)600m I(DM) Max. (A) Pulsed I(D)370m @Temp (øC)100 IDM Max (@25øC Amb)2 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)2.0

Contextual Info: Supertex inc. TQ3001 VQ3001 VQ7254 S urface M ount N- and P-Channel Quad Power MOSFET Arrays Ordering Information V R DS ON GS (ttl) Order Number / Package (max) (max) Q1 + 0 2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 14-Pin C-Dip* 20 Terminal LCC Quad

Contextual Info: VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY V (B R ) D S S M i n ( V ) r D S (o n ) Max ( Q ) Id (A) V G S (th )(V ) N-Channel 30 1 @ VGS= 12V 0.8 to 2.5 0.85 P-C hannel -3 0 2 @ Vq s » -1 2 V - 2 to -4 .5 -0 .6 FEATURES

Contextual Info: Tem ic VQ3001J/3001P Siliconix N-/P-Channel Enhancement-Mode MOS Transistor Arrays Product Summary V BR DSS Mín (V) r DS(on) Max (Q) VGS(th) (V) Id (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel -3 0 2 @ V Gs = - 1 2 V - 2 to -4 .5 -0 .6 Features

VP0300M

Abstract: VP0300L VQ2001J VQ2001P VQ3001J VQ3001P VQ7254J VQ7254P IN4080 VPMH03
Contextual Info: VPMH03 TYPICAL STATIC CHARACTERISTICS Pulse width 80ns— 30(Vs, Duty cycle 1%, Tc=25°C Part Numbers: VP0300M, VP0300L, VQ2001P, VQ2001J Segments 2 and 4: VQ3001P, VQ3001J, VQ7254P, VQ7254J Ohmic Region 1102 3 O : и. VDS = Ü. 0H 110 3 O z 10V VGS = iïTTTT