VQ2001J Search Results

VQ2001J Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
VQ2001J	Vishay	P-Channel Enhancement-Mode MOSFET Transistors	Original	PDF	78.85KB	4
VQ2001J	Vishay Intertechnology	P-Channel 30-V (D-S) MOSFET	Original	PDF	40.92KB	4
VQ2001J	Unknown	FET Data Book	Scan	PDF	60.21KB	1
VQ2001J	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	123.38KB	1
VQ2001J	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	124.25KB	1
VQ2001J	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	85.39KB	1
VQ2001J	Siliconix	MOSPOWER Design Data Book 1983	Scan	PDF	169.98KB	5
VQ2001J	Vishay Siliconix	Shortform Siliconix Datasheet	Short Form	PDF	181.85KB	1
VQ2001J	Vishay Telefunken	P-Channel Enhancement-Mode MOSFET Transistors	Scan	PDF	255.23KB	4

VQ2001J Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
VP0300M Abstract: VP0300M equivalent TA 7061 TO-205AD VP0300B VP0300L VQ2001J VQ2001P Contextual Info: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300M	Original	VP0300B/L/M, VQ2001J/P VP0300B VP0300L VP0300M VQ2001J VQ2001P O-226AA, VP0300L P-38283--Rev. VP0300M VP0300M equivalent TA 7061 TO-205AD VP0300B VQ2001J VQ2001P	PDF
Contextual Info: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number rDS »n M a x (Q ) V GS(th) (V) I d (A) VP0300B 2.5 @ VGs = -1 2 V - 2 to -4.5 -1.25 VP0300L 2.5 @ VGs - - 1 2 V - 2 to -4.5 -0.32 2.5 @ VGs = -1 2 V -2 to -4.5	OCR Scan	VP0300B/L/M, VQ2001J/P VP0300B VP0300L VPG300M VQ200U VQ2001P P-38283--Rev. 15-Aug-94	PDF
VQ2001P Contextual Info: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number rDS on Max (W) VGS(th) (V) ID (A) VP0300L V(BR)DSS Min (V) 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5	Original	VP0300L/LS, VQ2001J/P VP0300L VP0300LS VQ2001J VQ2001P O-226AA, VP0300L S-00591--Rev. 04-Apr-00 VQ2001P	PDF
VP0300B Abstract: VQ2001P VP0300L VP0300LS VQ2001J Contextual Info: VP0300B/L/LS, VQ2001J/P Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5	Original	VP0300B/L/LS, VQ2001J/P VP0300B VP0300L VQ2001J VQ2001P VP0300LS O-226AA, VP0300L S-58620--Rev. VP0300B VQ2001P VP0300LS VQ2001J	PDF
VP0300M Abstract: VP0300B Contextual Info: Tem ic VP0300B/L/M, VQ2001J/P Siliconix P-Channel Enhancement-Mode MOS Transistors Product Summary Part N um ber «•DS on M ax (Q ) VoSith) (V) I d (A) VP0300B 2 .5 @ V gs = - 1 2 V - 2 to -4 .5 -1 .2 5 VP0300L 2 .5 @ V GS = - 1 2 V - 2 to -4 .5 -0 .3 2	OCR Scan	VP0300B/L/M, VQ2001J/P VP0300B VP0300L VP0300M VQ2001J VQ2001P P-38283--	PDF
VP0300M Abstract: 150EC VP0300L Contextual Info: T e m ic siiiconh_ VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number • V br dss Min (V) ; ■ Id (A) r DS(on) Max (Q) VGS(th) (V) VP0300B 2.5@ V GS= -1 2 V - 2 to -4.5 -1.25 VP0300L 2.5 @ VGS = -1 2 V	OCR Scan	VP0300B/L/M, VQ2001J/P VP0300B VP0300L VP0300M VQ2001J VQ2001P AN804, P-38283--Rev. 150EC	PDF
VP0300M Abstract: VP0300L Contextual Info: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300M	Original	VP0300B/L/M, VQ2001J/P VP0300B VP0300L VP0300M VQ2001J VQ2001P O-226AA,	PDF
s4 vishay Abstract: AN804 VP0300L VP0300LS VQ2001J VQ2001P 0300L Contextual Info: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5 –0.5 2 @ VGS = –12 V	Original	VP0300L/LS, VQ2001J/P VP0300L VP0300LS VQ2001J VQ2001P 18-Jul-08 s4 vishay AN804 VP0300L VP0300LS VQ2001J VQ2001P 0300L	PDF
0300L Abstract: 70217 marking code Sk transistors Contextual Info: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number r DS(on) M a * (Î2) v GS(th) (V) Id (A) VP0300L 2.5 V q S = - 1 2 V - 2 to -4 .5 -0 .3 2 VP0300LS 2 .5 ® V a s = -1 2 V - 2 to -4 .5 -0 .5 2 @ V gs = - 1 2 V	OCR Scan	VP0300L/LS, VQ2001J/P VP0300L VP0300LS VQ2001J VQ2001P -226A 16-Jul-01 VP0300LVLS, 0300L 70217 marking code Sk transistors	PDF
VP0300M Abstract: VP0300L VQ2001J VQ2001P VQ3001J VQ3001P VQ7254J VQ7254P IN4080 VPMH03 Contextual Info: VPMH03 TYPICAL STATIC CHARACTERISTICS Pulse width 80ns— 30(Vs, Duty cycle 1%, Tc=25°C Part Numbers: VP0300M, VP0300L, VQ2001P, VQ2001J Segments 2 and 4: VQ3001P, VQ3001J, VQ7254P, VQ7254J Ohmic Region 1102 3 O : и. VDS = Ü. 0H 110 3 O z 10V VGS = iïTTTT	OCR Scan	80hs-30 VP0300M, VP0300L, VQ2001P, VQ2001J VQ3001P, VQ3001J, VQ7254P, VQ7254J VPMH03 VP0300M VP0300L VQ2001J VQ2001P VQ3001J VQ3001P VQ7254J VQ7254P IN4080 VPMH03	PDF
VP0300B Abstract: vishay LT VP0300L VP0300LS VQ2001J VQ2001P 70217 Contextual Info: _VP0300B/L/LS, VQ2001J/P Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS M in (V ) rDS(on) Max (Q ) Id (A) V GS(th) (V ) VP0300B 2.5 @ VGS = —12 V - 2 to —4.5 -1.25 VP0300L	OCR Scan	VP0300B/L/LS, VQ2001J/P VP0300B VP0300L VP0300LS VQ2001J VQ2001 S-58620â -Jun-99 vishay LT VP0300L VP0300LS VQ2001J VQ2001P 70217	PDF
75576 Abstract: AN804 VP0300B VP0300L VP0300M VQ2001J VQ2001P Contextual Info: VP0300B/L/M, VQ2001J/P Siliconix PĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = -12 V -2 to -4.5 -1.25 VP0300L 2.5 @ VGS = -12 V -2 to -4.5 -0.32 2.5 @ VGS = -12 V	Original	VP0300B/L/M, VQ2001J/P VP0300B VP0300L VQ2001J VQ2001P VP0300M AN804 VP0300B O226AA, 75576 AN804 VP0300L VP0300M VQ2001J VQ2001P	PDF
VP0300L Abstract: VP0300LS AN804 VQ2001J VQ2001P 0300l Contextual Info: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5 –0.5 2 @ VGS = –12 V	Original	VP0300L/LS, VQ2001J/P VP0300L VP0300LS VQ2001J VQ2001P O-226AA, VP0300L 0300L VP0300LS AN804 VQ2001J VQ2001P 0300l	PDF
AN804 Abstract: VP0300L VP0300LS VQ2001J VQ2001P 1g1s Contextual Info: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5 –0.5 2 @ VGS = –12 V	Original	VP0300L/LS, VQ2001J/P VP0300L VP0300LS VQ2001J VQ2001P 08-Apr-05 AN804 VP0300L VP0300LS VQ2001J VQ2001P 1g1s	PDF

Contextual Info: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì \|g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)	OCR Scan	T0220 14-Pin VQ2001J VQ200IP VQ2004J T0236 TP0101T TP0202T TP06I0T VP06I0T	PDF
vp0300m Abstract: VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B	OCR Scan	VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln vp0300m VP0300B VP0808L VQ2001P VQ2004P	PDF
VP0808B Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 5.0 5.0 -90 -60 -30 5.0 5.0 2.0 -8 0	OCR Scan	VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP0300B VP0300M VP0808L VQ2001P VQ2004P	PDF
BSR78 Abstract: VP0300M VP0808L 041 itt diode VP0300B VP0808B VP0808M VP1008B VP1008L VP1008M Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B	OCR Scan	VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln BSR78 VP0300M VP0808L 041 itt diode VP0300B	PDF
VP0808M Abstract: VQ2006P VP0300B VP0300M VP0808B VP0808L VP1008B VP1008L VP1008M VQ2001P Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 -8 0 -3 0 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 -90 -60 -30 1.3 Powor Dissipation	OCR Scan	VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VQ2006P VP0300B VP0300M VP0808L VQ2001P	PDF
VP0808B Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B	OCR Scan	VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP0300B VP0300M VP0808L VQ2001P VQ2004P	PDF
VP100 Abstract: VP1001P VP0300B VP0300M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 5.0 5.0 2.5 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B 0.37 0.37 0.48 1.0	OCR Scan	VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP100 VP1001P VP0300B VP0300M VP0808L	PDF
S4 12 Contextual Info: VQ2001 SERIES P-Channel Enhancement-Mode _ MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR\|DSS V Q 2001J -3 0 VQ 2001P 2 -3 0 2 TOP VIEW Dual-ln-Line Package Id (A PACKAGE - 0 .6 Plastic - 0 .6 S idebraze Ï7] D4	OCR Scan	VQ2001 2001J 2001P 14-PIN S4 12	PDF
VP0808M Abstract: IN400 VP0300B VP0300M VP0808B VP0808L VP1008B VP1008L VP1008M VQ2001P Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B	OCR Scan	VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln IN400 VP0300B VP0300M VP0808L VQ2001P	PDF
VP0300M Abstract: k 2541 30v IN400 VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B	OCR Scan	VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP0300M k 2541 30v IN400 VP0300B VP0808L	PDF

VQ2001J Search Results

VQ2001J Datasheets (9)

VQ2001J Datasheets Context Search

VP0300M

VQ2001P

VP0300B

VP0300M

VP0300M

VP0300M

s4 vishay

0300L

VP0300M

VP0300B

75576

VP0300L

AN804

vp0300m

VP0808B

BSR78

VP0808M

VP0808B

VP100

S4 12

VP0808M

VP0300M