VQA 10 Search Results

VQA 23

Abstract: Funkamateur VQA 13 ESBR5501 vqa 33 FUNKAMATEUR - Bauelementeinformation VQA13 esbg5501 CQX51 TLUY5400
Contextual Info: FUNKAMATEUR - Bauelementeinformation Vergleichslisten Optoelektronik Uchtemitterdioden Lichtemitterdioden, Durchmesser 5 mm o Farbe WF rot rot rot grün gelb rot grün gelb orange rot grün VQA VQA VOA VQA VQA VQA VQA VQA VQA VQA VQA 10 13 13-1 23 33 16 26

VQA 23

Contextual Info: date 09/23/2013 page 1 of 7 SERIES: VQA │ DESCRIPTION: DC-DC CONVERTER FEATURES • • • • • • designed for IGBT driver modules small footprint 3,000 Vac isolation short circuit protection temperature range -40~105°C efficiency up to 80% input

Contextual Info: date 07/01/2013 page 1 of 5 SERIES: VQA │ DESCRIPTION: DC-DC CONVERTER FEATURES • • • • • • designed for IGBT driver modules small footprint 3,000 Vac isolation short circuit protection temperature range -40~85°C efficiency up to 80% MODEL

S9S12

Contextual Info: date 02/05/2013 page 1 of 5 SERIES: VQA │ DESCRIPTION: DC-DC CONVERTER FEATURES • • • • • • designed for IGBT driver modules small footprint 3,000 Vac isolation short circuit protection temperature range -40~85°C efficiency up to 80% MODEL

A277D

Abstract: applikation heft A225D "halbleiterwerk frankfurt" VQA 13 VQA13 information applikation A302D Transistoren DDR halbleiterwerk
Contextual Info: J motkr^elel-ctsnonH-c Information Information - Applikation v : 1 . •' LEDAnsteuerungsscbaltkreis A 277 D * Eigenschaften und Einsatzmöcjlichkeiten - M ikroelektronik H eft 10 v e b h albleiterw erk fr a n k fu r t/ o d e r laitbetrieb im veb Kombinat mikraelektronik

5252 F 1006

Abstract: 40r6 NF 846 RFT service-mitteilungen "service-mitteilungen" vqe 21 RFT Servicemitteilungen servicemitteilungen service-mitteilungen 5252 f 1201
Contextual Info: SERVICE-MITTEILUNGEN 12-15 Iradio - television VEB RFT INDUSTRIEVERTRIEB RUNDFUNK UND F E R N S E H E N Ausgabe Seite S e p t. 88 1- 3 16 M itte ilu n g aus dem VEB S te r n -B a d io B e r l in , K u n d en d ien st Laufw erk MU 3oo S-DB - S e r v ic e v a r ia n te n

DZ800S17K3

Abstract: FF800R17KE3
Contextual Info: Technische Information / technical information DZ800S17K3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Emitter Controlled³ Diode 62mm C-series module with Emitter Controlled³ diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data

Contextual Info: Technische Information / technical information DD600S17K3_B2 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ $ 1 # % 7 28 6( 1 $ ,-. / ,

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

UEI 20 SP 010

Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Contextual Info: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"

max4440

Contextual Info: APT10086BVFR A dvanced w Tæ p o w e r Te c h n o l o g y iooov i3a 0.8600 POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

LA6358

Abstract: LA6358NM 777T
Contextual Info: Ordering number: EN 3192 Monolithic Linear IC LA6358NM High-Performance Dual Operational Amplifier Overview The LA6358NM is an IC integrating two high-performance operational amplifiers in a single package. This operational amplifier contains an internal phase compensator and is designed to operate from a

crt bw diagram

Abstract: CR2424 CR2425 SC05 VQA 23
Contextual Info: DISCRETE SEMICONDUCTORS [M m Ü IK IE E T CR2424; CR2425 Video driver hybrid amplifiers Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC05 1995 Apr 04 Philips Semiconductors PH ILIPS 713,Dfl2fc. 0 0 T 5 1 7 t. S1G

Contextual Info: A dvanced APT8065BVFR pow er Te c h n o lo g y 800V POWER MOS V 13A 0.650Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

LF33

Abstract: IRT 1250
Contextual Info: IRFR/Ü210A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ H Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 n A Max. @ VDS= 200V Low Rdsjon) ■ 1.250 (Typ.)

Contextual Info: SSF25N40A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ VDS= 400V

VQA 13

Abstract: IRF634A
Contextual Info: ERF634A Advanced Power MOSFET FEATURES b vdss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 m A Max. @ VDS= 250V ■ - 250 V

BUZ21

Contextual Info: «ç»FVF SIPMOS Power MOS Transìstor BUZ 21 L VDS = 100 V /D = 21 A ^DS on = 0.085 Q • • • • • N channel Enhancement mode Logic level Avalanche-proof Package: TO -220A B ') Type O rdering code BUZ 21 L C67078-S1338-A2 Maximum Ratings Parameter

rema andante

Abstract: GER-A service-mitteilungen stern R 160 REMA VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN Stassfurt rema adagio 830 adagio rema adagio
Contextual Info: SERVICE-MITTEILUNGEN VEB IN DUSTRIEVERTRIEB RUNOFUNK UND FERNSEH EN r a d io -television CHROMAT 1060 Der VEB Fernsehgerätewerke Staßfurt wird, im Verlauf des 2. Halbjah­ res 1976 die ersten Farbfernsehgeräte vom neuen Typ "CHROMAT 1060" an den Handel ausliefera. Der "CHROMAT 1060" gilt offiziell als

754C

Abstract: L3036 2082c K/EL2082J
Contextual Info: EL2082/EL2082C P ta n frf iHIGHl PtfffpAMANfiE l H iAilAlOG i pINTEGRATE W QftClJITS P • Current-Mode Multiplier F ea tu r es G en eral D esc rip tio n • Flexible inputs and outputs, all ground referred • ISO M Hz large and small-signal bandwidth • 46 dB of calibrated gain control

TDB1080

Abstract: rms audio amplifier circuit diagram TDB1080T Limiting Amplifier fm detector phase detector 500 khz 5PQA audio signal detector circuit 100 audio amplifier circuit diagram Long-Tailed
Contextual Info: TDB1080 TDB1080T I.F. LIMITING AMPLIFIER, FM DETECTOR AND AUDIO AMPLIFIER G E N E R A L DESCRIPTIO N The TDB1080 is a bipolar integrated circuit comprising a limiting amplifier, a balanced FM detector and a class-B audio amplifier. It is intended for frequencies up to 500 kHz with either narrow-band or

Contextual Info: Tem ic Cell Based CB8 0.8|im CMOS Cell-Based Designs MATRA MHS Description MHS calibrated COMPASS Cell Based tools and libraries • the density and the speed are close to those of a full on CMOS 0.8 xm, bringing an additional option to its custom, while keeping a design cycle close to the

marking BSs sot23

Abstract: BSS-229 s 100 139 004 BSS229 marking BSs sot23 siemens
Contextual Info: SIEMENS SIPMOS Small-Signal Transistors VDS lD ^ D S o n • • • BSS 139 BSS 229 = 250 V = 0 .0 4 /0 .0 7 A = 100 Q N channel Depletion mode Packages: SOT-23, T O -9 2 1) Type Marking Ordering code fo r version in bulk Ordering code Ordering code

Contextual Info: MSD INC. ENGINEERING DATA SHEET RELAYTYPE': HZA,-2iO'D^ô COMPUTERPARTNo.:922f 5 7 TEST PROCEDURE MSDP- 791 CUSTOMER/SPECIFICATION: CATAIOÔ- XTcM REV K /^ TEST REQUIREMENTS COIL CpRggviP A OPERATETIME:15mSM&* RELEASETIME:50fttS MAX CONTACT MAKEBOUNCE: \ mS MA*