REMA Search Results

TA8659AN

Abstract: toshiba TA8615N TA8601BN TA8655an ta8615 7644BP ta7644bp ta8615n ta8659a TA7622AP
Contextual Info: TOSHIBA 5. Video/Chroma Systems 5-1 ICs fo r V id e o /C h ro m a \F u n c tio n Video Process­ ing Type NoN ^ Chroma Processing NTSC PA L SECAM Deflection System System Switch Package Remarks TA7608CP •■ ■■ - - - - NTSC Video/Chroma DIP 28 TA 7644BP

1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80

Contextual Info: USED ON 1.6 5 ± 0.15 DIA HOLE SEE REMARKS NDTESi œ r- co in Ln DIMENSIONS WITH MAX. TOLERANCES DIMENSIONES CON TOLERANCIAS MAX FDR REVERSE REAL SEE DWG. 155098 DASCHES 1 - 2 - 3 AND 4 ONLY. (PARA ENROLLADO OPUESTO VER DIDUJO 155098- 1, 2, 3 Y 4 SOLEMANTE.)

CMS3216LAF

Abstract: CMS3216LAG CMS3216LAH
Contextual Info: CMS3216LAx-75xx 32M 2Mx16 Low Power SDRAM Revision 0.2 January, 2007 Rev0.2, Jan. 2007 CMS3216LAx-75xx Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions

Contextual Info: CMS4A16LAx–75Ex 128M 8Mx16 Low Power SDRAM Revision 0.5 May. 2007 Rev. 0.5, May. ‘07 CMS4A16LAx–75Ex Document Title 128M(8Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1

Contextual Info: BKS-16V24T500 Miniature Surface Mount Polymeric ESD Suppressors BKS-16V24T500 Specification PRODUCT OVERVIEW Surface Mount Polymeric ESD Suppressor is the leading ESD protection solution to meet IEC 61000-4-2 level 4 transient and at the same time remain signal integrity above 4.5 Gbps. It is

DS90LV011AQ

Abstract: DS90Lv0
Contextual Info: DS90LV011AQ DS90LV011AQ Automotive LVDS Differential Driver Literature Number: SNLS296C DS90LV011AQ Automotive LVDS Differential Driver General Description Features The DS90LV011AQ is an LVDS driver optimized for high data rate and low power applications. The DS90LV011AQ is a current mode driver allowing power dissipation to remain low

Contextual Info: Tech Brush - Detail 2030-2033 Techspray’s TechClean brushes are made of premium grade materials. Don’t be fooled by cheap imports. Bristles are securely stapled in place, eliminating loose hairs. High precision brushes for cleaning and coating Five tons of pressure are applied to each metal brush handle to ensure that the bristles remain intact

32176 Group PWM CODE

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

iso 5459

Contextual Info: Coaxial Amplifier 50Ω ZHL-50W-52 High Power 50W 50 to 500 MHz Features • over voltage protection, shuts off above 29V • over temperature protection shuts off above 100°C • excellent IP3, 55 dBm typ. • class A amplifier, usable up to 75W. • regulated internal power supply current remains constant over 22 to 28V

A416316B

Contextual Info: A416316B Series Preliminary 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue November 15, 2000 Preliminary November, 2000, Version 0.0

K1S161611A

Abstract: K1S161611A-I
Contextual Info: Preliminary K1S161611A UtRAM Document Title 1Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft October 6, 2003 0.1 Revised - Added Lead Free 48-FBGA-6.00x7.00 Product November 25, 2003 Preliminary

K9S2808V0C

Abstract: K9S6408V0C K9S5608V0X
Contextual Info: K9S5608V0C/B K9S2808V0C/B K9S6408V0C/B SmartMediaTM Document Title SmartMediaTM Card Revision History Revision No Draft Date Remark 0.0 Initial issue July 17th 2000 0.1 1. Explain how pointer operation works in detail. 2. Updated operation for tRST timing

KL-05

Contextual Info: LIGHT PIPE Part Number: KL-05 Features z WIDE VIEWING ANGLE. z DESIGNED TO REPLACE RECTANGULAR RIGHT ANGLE THROUGH HOLE DEVICE. z HIGH TRANSMISSIVITY PLOYCARBONATE MATERIAL. z UL94V-0 COMPLIANCE. z RoHS COMPLIANT. Package Dimensions Remarks: 1.Operating temperature -45°C To +85°C

TIB0

Abstract: K9F6408Q0C K9F6408Q0C-B K9F6408U0C K9F6408U0C-B K9F6408U0C-QCB0
Contextual Info: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA

K6F2008S2E

Abstract: K6F2008S2E-F
Contextual Info: K6F2008S2E Family CMOS SRAM Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft February 28, 2001 1.0 Finalize September 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

tba 2003

Abstract: K6F1616U6C-FF70 K6F1616 K6F1616U6C
Contextual Info: Preliminary CMOS SRAM K6F1616U6C Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark November 14, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K7A323600M

Abstract: K7B321825M-QC65 K7A321800M
Contextual Info: K7A323600M K7A321800M 1Mx36 & 2Mx18 Synchronous SRAM Document Title 1Mx36 & 2Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial draft May. 10. 2001 Advance 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary

K7Q161852A

Abstract: K7Q161852A-FC10 K7Q161852A-FC13 K7Q161852A-FC16 K7Q163652A K7Q163652A-FC10 K7Q163652A-FC13 K7Q163652A-FC16
Contextual Info: K7Q163652A K7Q161852A 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. April, 30, 2001 Advance 0.1 1. Amendment 1 Page 3,4 PIN NAME DESCRIPTION W 4A) : from Read Control Pin to Write Control

K7Z327285M

Contextual Info: K7Z327285M Preliminary 512Kx72 DLW Double Late Write RAM Document Title 512Kx72 DLW(Double Late Write) RAM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial document. 1. Device name change from Double Late Write SigmaRAM to Double Late Write RAM

A67L7332

Abstract: A67L7336 A67L8316 A67L8318
Contextual Info: A67L8316/A67L8318/ A67L7332/A67L7336 Series 256K X 16/18, 128K X 32/36 Preliminary LVTTL, Pipelined DBA SRAM Document Title 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue

K7M321825M

Abstract: K7M321825M-QC75 K7M323625M K7M323625M-QC75
Contextual Info: K7M323625M K7M321825M 1Mx36 & 2Mx18 Flow-Through NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 10. 2001 Preliminary 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary

LP62S2048AX-70LLTF

Abstract: 8X13 LP62S2048A-T
Contextual Info: LP62S2048A-T Series 256K X 8 BIT LOW VOLTAGE CMOS SRAM Document Title 256K X 8 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. History Issue Date Remark 0.0 Initial issue June 24, 2002 Preliminary 0.1 Change VCC range from 2.7V~3.3V to 2.7V~3.6V October 15, 2002

K7A401800B-QC

Abstract: K7A401809B K7A401809B-QC K7A403200B-QC K7A403209B K7A403209B-QC K7A403609B K7B401825B-QC K7B403225B-QC
Contextual Info: K7A403609B K7A403209B K7A401809B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters