VQA 33 Search Results

VQA 23

Abstract: Funkamateur VQA 13 ESBR5501 vqa 33 FUNKAMATEUR - Bauelementeinformation VQA13 esbg5501 CQX51 TLUY5400
Contextual Info: FUNKAMATEUR - Bauelementeinformation Vergleichslisten Optoelektronik Uchtemitterdioden Lichtemitterdioden, Durchmesser 5 mm o Farbe WF rot rot rot grün gelb rot grün gelb orange rot grün VQA VQA VOA VQA VQA VQA VQA VQA VQA VQA VQA 10 13 13-1 23 33 16 26

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

5252 F 1006

Abstract: 40r6 NF 846 RFT service-mitteilungen "service-mitteilungen" vqe 21 RFT Servicemitteilungen servicemitteilungen service-mitteilungen 5252 f 1201
Contextual Info: SERVICE-MITTEILUNGEN 12-15 Iradio - television VEB RFT INDUSTRIEVERTRIEB RUNDFUNK UND F E R N S E H E N Ausgabe Seite S e p t. 88 1- 3 16 M itte ilu n g aus dem VEB S te r n -B a d io B e r l in , K u n d en d ien st Laufw erk MU 3oo S-DB - S e r v ic e v a r ia n te n

A277D

Abstract: applikation heft A225D "halbleiterwerk frankfurt" VQA 13 VQA13 information applikation A302D Transistoren DDR halbleiterwerk
Contextual Info: J motkr^elel-ctsnonH-c Information Information - Applikation v : 1 . •' LEDAnsteuerungsscbaltkreis A 277 D * Eigenschaften und Einsatzmöcjlichkeiten - M ikroelektronik H eft 10 v e b h albleiterw erk fr a n k fu r t/ o d e r laitbetrieb im veb Kombinat mikraelektronik

UEI 20 SP 010

Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Contextual Info: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"

max4440

Contextual Info: APT10086BVFR A dvanced w Tæ p o w e r Te c h n o l o g y iooov i3a 0.8600 POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: A dvanced APT8065BVFR pow er Te c h n o lo g y 800V POWER MOS V 13A 0.650Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

service-mitteilungen

Abstract: SAL 41 C-951 colortron Servicemitteilungen RFT Service Mitteilung Stassfurt Colortron Mitteilung VEB RFT SAY16 scans-048
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N M M IR a d io - Television I OKTOBER 1984 A 9 SEITE 1-4 Mitteilung aus dem VEB Fernsehgerätewerke "Friedr.Engels" Staßfurt Farbbildröhren vom Werk für Fernsehelektronik Berlin

754C

Abstract: L3036 2082c K/EL2082J
Contextual Info: EL2082/EL2082C P ta n frf iHIGHl PtfffpAMANfiE l H iAilAlOG i pINTEGRATE W QftClJITS P • Current-Mode Multiplier F ea tu r es G en eral D esc rip tio n • Flexible inputs and outputs, all ground referred • ISO M Hz large and small-signal bandwidth • 46 dB of calibrated gain control

TDB1080

Abstract: rms audio amplifier circuit diagram TDB1080T Limiting Amplifier fm detector phase detector 500 khz 5PQA audio signal detector circuit 100 audio amplifier circuit diagram Long-Tailed
Contextual Info: TDB1080 TDB1080T I.F. LIMITING AMPLIFIER, FM DETECTOR AND AUDIO AMPLIFIER G E N E R A L DESCRIPTIO N The TDB1080 is a bipolar integrated circuit comprising a limiting amplifier, a balanced FM detector and a class-B audio amplifier. It is intended for frequencies up to 500 kHz with either narrow-band or

Contextual Info: MSD INC. ENGINEERING DATA SHEET RELAYTYPE': HZA,-2iO'D^ô COMPUTERPARTNo.:922f 5 7 TEST PROCEDURE MSDP- 791 CUSTOMER/SPECIFICATION: CATAIOÔ- XTcM REV K /^ TEST REQUIREMENTS COIL CpRggviP A OPERATETIME:15mSM&* RELEASETIME:50fttS MAX CONTACT MAKEBOUNCE: \ mS MA*

A209K

Abstract: 1pm05 tda 7812 KA213A KP303D B342D sft353 GL 7812 u 711 service-mitteilungen
Contextual Info: SERVICE-MITTEILUNGEN VEB IN D US TR IEV E R TR IE B R U N D F U N K U N D FERNSEHEN jf jl f j= = Ì 3 I ra d io - television AUSGABE: 1985 3 S e ite 1 - 4 Ü b e r s i c h t über d ie w ic h tig s te n H a lb le ite r Stand* A p ril 1985 Die in den S e rv ic e -M itte ilu n g e n N r. 3 /8 2 v e r ö f f e n t l ic h t e Über­

3D24N2Y

Abstract: transistor sc 238 9008 transistor transistor sc 308 SAL 41 transistor 9013 1008 transistor X2C70 transistor D 1002 3D24N
Contextual Info: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB R U N O F U N K U N D FE R N SE H E N AUSGABE: M m ri r a d i o - t e i e v i s i o n l 1 9 8 4 14-16 S e ite 1 - 1 2 Mitteilung aus dem VSB RFT Industrievertrieb R.u.F. Leipzig Serviceinformationen zuin neuen Auto-Stereo-Kassettenabspielgerät

VEB mikroelektronik

Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
Contextual Info: H albleiter-B auelem ente Semiconductors D ie vorliegend e Übersicht en th ält in g ed rä n g te r Form d ie wichtigsten G renz- und Kenn­ d aten d e r in d er D D R g efertigten H a lb le ite rb au e le m e n te . Dem A n w en der soll durch diese Übersicht die Auswahl der jew eils in Frage kom menden

Contextual Info: A dvanced PO W ER Te c h n o lo g y APT10050LVFR iooov 21 a o.sooq POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

rema andante

Abstract: GER-A service-mitteilungen stern R 160 REMA VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN Stassfurt rema adagio 830 adagio rema adagio
Contextual Info: SERVICE-MITTEILUNGEN VEB IN DUSTRIEVERTRIEB RUNOFUNK UND FERNSEH EN r a d io -television CHROMAT 1060 Der VEB Fernsehgerätewerke Staßfurt wird, im Verlauf des 2. Halbjah­ res 1976 die ersten Farbfernsehgeräte vom neuen Typ "CHROMAT 1060" an den Handel ausliefera. Der "CHROMAT 1060" gilt offiziell als

sm 0038

Abstract: 0038Q
Contextual Info: A dvanced APT20M38BVR pow er Te c h n o lo g y 200V 67A 0.038Q POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: A dvanced APT30M70BVR pow er Te c h n o lo g y 300V 48A 0.070Í2 POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

vga plug

Abstract: vga D-sub connector D-Sub 9-pin female connector RoHS 1.5mm 5 pin connector 9 pin vga dvi plug spec VGA specification sheet Molex hst VGA PLUG Dimensions HST 2004
Contextual Info: N O T E :! A D A P T O R CO VER M A T E R IA L 1.1 UL G R AD E A B S 1.2 COLOR: P A N T O N E 661C M A TER IA L LIST: 2. DVI CONNCETOR SPEC IFIC ATIO N 2.1 R E F E R TO PRO DU CT SPEC. PS 74 320 - 0 01. 2.2 C O N T A C T P LA TIN G : A U F L A S H . 3. TH IS PRO DU CT M U ST M E E T MX RoH S COMPLIANCE.

0038Q

Contextual Info: A dvanced APT20M38SVR pow er Te c h n o lo g y 200V P O W E R 67A 0.038Q M O S V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

SM 96 diode

Contextual Info: A dvanced PO W ER Te c h n o lo g y A PT10050JVFR iooov POWER MOS V 19 A o.sooq FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT5010LVFR A dvanced pow er Te c h n o lo g y 5 0 0 V POWER MOS V 4 7 A 0 .1 0 0 Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

5017B

Abstract: DIODE TH 5 N
Contextual Info: A P T 5017B V F R A dvanced PO W ER Te c h n o lo g y 500v POWER MOS V 30a 0.170s 2 FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

tic 1260

Abstract: E 212 JFET
Contextual Info: APT6015B2VR A dvanced pow er Te c h n o lo g y 600V 38A 0.150Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™