VR10V Search Results

induction cooker fault finding diagrams

Abstract: enamelled copper wire swg table AC digital voltmeter using 7107 wiring diagram IEC320 C14 Inlet Male Power Socket Fuse Switch db 3202 diac siemens mkl capacitor YY63T varta CR123A HXD BUZZER lt700 transformer
Contextual Info: 03front order p1_3 1/29/02 3:01 PM C3 Page 1 components cables & connectors actives 18 57 semiconductors optoelectronics passives contents 72 81 87 91 capacitors resistors transformers, ferrites & inductors emc, filters & suppression electromechanical 92 120

SK9860

Abstract: SK5036A SK9000 0/B60C 800 Si SK7183
Contextual Info: TH On S O N / DISTRIBUTOR 5flE D • ^031.073 aOÜMêflM 77b ■ TCSK GENERAL PURPOSE RECTIFIERS/DIODES Maximum Ratings Power Devices High Speed Devices ■ H Peak Reverse Current TCE Type SK3017B SK3031A SK3032A SK3033A SK3043B SK3051 SK3051P10 SK3080 SK3081

MTD7030

Abstract: MTE1050A MTE1100 T-W-53 diode tw
Contextual Info: HARKTECH INTERNATIONAL IflE D STTTiaSS Gcmoaìs ? PHOTO DIODE T - 41-S.3 MTD7030 SILICON PIN PHOTO DIODE CATHODE INDEX LK APPLICATIONS • REMOTE CONTROL SYSTEM • OPTICAL SWITCH SENSOR CENTER FEATURES 1. ANODE 2. CATHODE • High sensitivity: lsc=1-5i<A Typ.

Contextual Info: SA0YO Smal 1-Signal High-Voltage Schottky Barrier Diodes 3 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.

VDR300

Abstract: K6711 VR10V241C 100n x2 Velleman K8046 Velleman 1n4148 LED3RL K8006 K8000
Contextual Info: Total solder points: 55 Difficulty level: beginner 1o 2þ 3o 4o 5oadvanced Relay output module for K8006 Features: K8027 þ For use with K8006 Base unit for home modular light system. þ Suited for both resistive and inductive loads. þ Can be operated from an external push button & open collector

Contextual Info: SAflYO Schottky Barrier Diodes otc C o a x i a l Type F o r i- e c t i f 1e t-s A p p l icat i o n s ☆ Suited for high frequency rectifying circuits of switching regulators,converter and choppers. F e a t u r e s ☆ Very small forward voltage. ☆ Small switching noise.

"Smoke Sensor"

Abstract: TLN105B TLN115A TPS705 TPS706
Contextual Info: T O S H IB A TPS705JPS706 TPS705, TPS706 TOSHIBA PHOTO DIODE SILICON PIN Unit in mm SILICON PIN PHOTO DIODE FOR REMOTE CONTROL VARIOUS KINDS OF REMOTE CONTROL SYSTEMS 15 ± 0.25 SMOKE SENSOR 54.4±0.25 • Small package makes it possible to make a set thin.

JVR 431 0.7

Abstract: 1N276 A145C thermal 141L t41l
Contextual Info: ● l_l r NCH-POUNO MIL-S-19500/192B 6 October 1989 141L-S-19500/192A 19 Aprfl 1968 MILITARY I SPECIFICATION SEMICONOUCTOR DEVICE, OIOOE, GERMANIUM, WITCHING TYPE 1N276, JAN, JANTX, AND JANTXV I This specification Agencies of the 1. is approved Department

sb11-04

Contextual Info: SMYO Schottky Barrier Diodes C oa x i a 1 Type For r e c t if ie r s A p p l i c a t i o n s ☆ Suited for high frequency rectifying circuits of switching regulators, converter and choppers. F e a t u r e s ☆ Very small forward voltage. ☆ Small switching noise.

MV1401

Abstract: MV1402 MV1403 MV1405 MV1406 MV1407 MV1408 MV1409
Contextual Info: M S I ELECTRONICS INC 3SE D E3 SbSbMbb QG0G3fl3 electronics m e The large capacitance tu n in g ratio in the hyperabrupts listed here make them suitable fo r broad band tu n in g applications. T heir large values of nom inal capacitance are fo r A M applications w ith th e lo w e r capacitance

FU12AP

Abstract: M51000 Ge APD FU-12AP-N
Contextual Info: MITSUBISHI DISCRETE SC 0014631 TbE blE D in iT s FU-12AP-N, FU-32AP APD Module for Long Wavelength Band FU-12AP-N and FU-32AP are detector module containing highly reliable Ge APD (Avalanche photodiode) for long wavelength band (0.8—1.5 wm) and has high-speed response.

1ss37

Contextual Info: smm Small-Signal High-Voltage Schottky Barri r Di odes 3 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.

Contextual Info: SIEMENS SFH 234 S SILICON FOUR-QUADRANT PHOTODIODE Package Dimensions in Inches mm | |.141 (0.3)| A] Chip Location 012 (.3) max Common ~ . Cathode GrJd .018* 002 (0 45*0.05) 1 A Anode B - - 0 I g | .570* 039 (14.5*1.0)' .118±.008 I (3.0*0 2) .141 Anode \

fototransistor

Abstract: AFD3000 AFE2000 FPE100 fototransistor ir T0180 AFD1200 AFE5100
Contextual Info: ABORN ELECTRONICS S3E J> Special Devices OGTTblM DDDODSb bT^ H A B E -p¿S -07 FIBER OPTIC EMITTERS DESCRIPTION DEVICE units çonditlons WAVELENGTH POWER OUT FORWARD VOLTAGE nM Ip=50mA Volts Ip*50mA uW Ip=5QmA T i n r PACKAGE FACE TIME DRAWING numerical APERATURE