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    VSC1520 Search Results

    VSC1520 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    VSC1520
    Vitesse Semiconductor High Speed GaAs - 1500 / 1520 Gate Structured Cell Array Scan PDF 527.8KB 12

    VSC1520 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    pin diagram of ic ha 741

    Abstract: of ttl 741 ic
    Contextual Info: PRELIMINARY DA TA SHEET VSL4480 VITESSE High Performance Clock Distribution Chip SEMICONDUCTOR CORPORATION Features VOH = 4V, Compatible with popular pPu • Up to 80 MHz Performance Outputs Can Drive up to 120 pF Loads • Single +5V Power Supply 1Typical Power Dissipation: 1 Watt


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    VSL4480 VSL4480 pin diagram of ic ha 741 of ttl 741 ic PDF

    A2N transistor

    Abstract: FZJ 165 VSC1520 VSC1500TC s92 FET trace inverter schematic VSC1500 transistor ZA 16
    Contextual Info: Features • Superior Performance: Supports clock rates up to 2.5 GHz in Mux/Demux applications • Proven H-GaAs E/D MESFET Process • Array performance - Typical gate delay high speed section : 150 ps @ 23 mW (2-input XOR/XNOR, F.O. = 1, 0,5 mm wire) - Typical gate delay (low power section):


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    VSC1500/VSC1520 100K/10KH A2N transistor FZJ 165 VSC1520 VSC1500TC s92 FET trace inverter schematic VSC1500 transistor ZA 16 PDF

    Contextual Info: * te - PRELIMINARY DATA SHEET VITESSE VIPER Fam ily High Performance, Low Cost GaAs Gate Arrays SEMICONDUCTOR CORPORATION Features • Superior S peed/Pow er Perform ance and Com parable in Cost to BiCM OS Solutions 3 Arrays Sizes: 1,5K, 7K, and 13K Usable


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    PDF

    Contextual Info: - Features • Superior Performance: Supports clock rates up to 2.5 GHz in Mux/Demux applications • Proven H-GaAs E/D MESFET Process • Array performance - Typical gate delay high speed section : 150 ps @ 23 mW (2-input XOR/XNOR, F.O. = 1,0.5 mm wire)


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    100K/10KH PDF

    Contextual Info: VITESSE FEATURES • Superior Performance: Supports clock rates up to 2.5 GHz in Mux/Demux applications • Proven H-GaAs E/D MESFET process • Array performance - Typical gate delay high speed section : 150 ps @ 23 mW (2-input XOR/XNOR, F.O. = 1,0.5 mm wire)


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    VSC1520 VSC1500DUT VS15E0Ã PDF