BCR133W
Abstract: VSO05561
Text: BCR133W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR133W WCs Pin Configuration 1=B 2=E Package 3=C SOT323
|
Original
|
PDF
|
BCR133W
VSO05561
EHA07184
OT323
Nov-29-2001
BCR133W
VSO05561
|
BCR142W
Abstract: VSO05561
Text: BCR142W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR142W WZs Pin Configuration 1=B 2=E Package 3=C SOT323
|
Original
|
PDF
|
BCR142W
VSO05561
EHA07184
OT323
Nov-29-2001
BCR142W
VSO05561
|
BCR108W
Abstract: VSO05561
Text: BCR108W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323
|
Original
|
PDF
|
BCR108W
VSO05561
EHA07184
OT323
Nov-29-2001
BCR108W
VSO05561
|
BCR112W
Abstract: VSO05561
Text: BCR112W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in resistor R 1=4.7k, R 2=4.7k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR112W WFs Pin Configuration 1=B 2=E Package 3=C SOT323
|
Original
|
PDF
|
BCR112W
VSO05561
EHA07184
OT323
Nov-29-2001
BCR112W
VSO05561
|
BCR198W
Abstract: VSO05561 MARKING WRS
Text: BCR198W PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=47k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR198W WRs Pin Configuration 1=B 2=E Package 3=C SOT323
|
Original
|
PDF
|
BCR198W
VSO05561
EHA07183
OT323
Dec-13-2001
BCR198W
VSO05561
MARKING WRS
|
VSO05561
Abstract: 818-25W
Text: BC 817W, BC 818W NPN Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC 807W, BC 808W PNP 1 Pin Configuration VSO05561 Type
|
Original
|
PDF
|
VSO05561
17-16W
OT-323
17-25W
17-40W
18-16W
18-25W
VSO05561
818-25W
|
BCR146W
Abstract: VSO05561
Text: BCR146W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=47k, R 2=22k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR146W WLs Pin Configuration 1=B 2=E Package 3=C SOT323
|
Original
|
PDF
|
BCR146W
VSO05561
EHA07184
OT323
Jul-13-2001
BCR146W
VSO05561
|
BAS40-04W
Abstract: BAS40-05W BAS40-06W VSO05561
Text: BAS40-04W.BAS40-06W 3 Silicon Schottky Diode General-purpose diode for high-speed switching Circuit protection 2 Voltage clamping High-level detecting and mixing BAS40-04W 1 BAS40-05W BAS40-06W 3 3 3 1 2 1 EHA07005 VSO05561 2 1 2 EHA07006 EHA07004
|
Original
|
PDF
|
BAS40-04W.
BAS40-06W
BAS40-04W
BAS40-05W
EHA07006
EHA07004
EHA07005
VSO05561
BAS40-04W
BAS40-05W
BAS40-06W
VSO05561
|
wns marking
Abstract: BCR185W VSO05561
Text: BCR185W PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R 1=10k, R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR185W WNs Pin Configuration 1=B 2=E Package 3=C SOT323
|
Original
|
PDF
|
BCR185W
VSO05561
EHA07183
OT323
Jul-20-2001
wns marking
BCR185W
VSO05561
|
BCR108W
Abstract: VSO05561
Text: BCR108W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323
|
Original
|
PDF
|
BCR108W
VSO05561
EHA07184
OT323
Jul-16-2001
BCR108W
VSO05561
|
BAT15-05W
Abstract: VSO05561 noise diode
Text: BAT15-05W Silicon Schottky Diode DBS mixer applications up to 12 GHz 3 Low noise figure Low barrier type 2 1 VSO05561 BAT 15-05W C1/C2 3 1 2 A1 A2 EHA07179 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-05W
|
Original
|
PDF
|
BAT15-05W
VSO05561
5-05W
EHA07179
OT323
Jul-06-2001
EHD07079
EHD07081
BAT15-05W
VSO05561
noise diode
|
BAT68-04W
Abstract: BAT68-05W BAT68-06W BAT68W VSO05561
Text: BAT68W Silicon Schottky Diodes For mixer applications in the VHF / UHF range 3 For high-speed switching applications 2 1 BAT68W BAT68-05W BAT68-04W 1 3 1 2 3 1 2 EHA07005 EHA07002 BAT68-06W 3 3 VSO05561 1 2 EHA07006 EHA07004 ESD: Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
PDF
|
BAT68W
BAT68-05W
BAT68-04W
EHA07005
EHA07002
BAT68-06W
VSO05561
EHA07006
EHA07004
BAT68-04W
BAT68-05W
BAT68-06W
BAT68W
VSO05561
|
VSO05561
Abstract: No abstract text available
Text: BCR 166W PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR 166W WTs Pin Configuration 1=B 2=E Package
|
Original
|
PDF
|
VSO05561
EHA07183
OT-323
Oct-19-1999
VSO05561
|
VSO05561
Abstract: No abstract text available
Text: BAW 56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type Marking BAW 56W A1s Pin Configuration 1 = C1 2 = C2 Package 3 = A1/A2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
PDF
|
VSO05561
EHA07187
OT-323
Oct-08-1999
EHB00093
EHB00090
VSO05561
|
|
|
WFs transistor
Abstract: VSO05561
Text: BCR 112W NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R 1=4.7kΩ, R 2=4.7kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR 112W WFs Pin Configuration 1=B 2=E Package
|
Original
|
PDF
|
VSO05561
EHA07184
OT-323
Oct-19-1999
WFs transistor
VSO05561
|
VSO05561
Abstract: No abstract text available
Text: BCR 191W PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R 2=22kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR 191W WOs Pin Configuration 1=B 2=E Package
|
Original
|
PDF
|
VSO05561
EHA07183
OT-323
Oct-19-1999
VSO05561
|
Untitled
Abstract: No abstract text available
Text: BAS 16W Silicon Switching Diode 3 For high-speed switching applications 2 1 VSO05561 1 3 EHA07002 Type Marking BAS 16W A6s Pin Configuration 1=A 2 = n.c. Package 3=C SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage
|
Original
|
PDF
|
VSO05561
EHA07002
OT-323
Mar-02-2001
EHB00025
EHB00022
|
marking 5bs
Abstract: BC818W VSO05561 BC807-16W BC807-25W BC807-40W BC807W BC808-16W BC808-25W BC808-40W
Text: BC807W, BC808W PNP Silicon AF Transistors 3 For general AF applications High collector current High current gain Low collector-emitter saturation voltage 2 Complementary types: BC817W, BC818W NPN 1 Pin Configuration VSO05561 Type Marking Package
|
Original
|
PDF
|
BC807W,
BC808W
BC817W,
BC818W
VSO05561
BC807-16W
OT323
BC807-25W
BC807-40W
marking 5bs
BC818W
VSO05561
BC807-16W
BC807-25W
BC807-40W
BC807W
BC808-16W
BC808-25W
BC808-40W
|
BF799W
Abstract: VSO05561
Text: BF799W NPN Silicon RF Transistor 3 For linear broadband amplifier application up to 500 MHz SAW filter driver in TV tuners 2 1 Type BF799W Marking LKs 1=B Pin Configuration 2=E 3=C VSO05561 Package SOT323 Maximum Ratings Parameter Symbol Collector-emitter voltage
|
Original
|
PDF
|
BF799W
VSO05561
OT323
Apr-15-2003
100MHz
EHT07116
EHT07117
BF799W
VSO05561
|
RBS 200
Abstract: BF771W VSO05561
Text: BF771W NPN Silicon RF Transistor 3 For modulators and amplifiers in TV and VCR tuners 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF771W RBs Pin Configuration 1=B 2=E Package 3=C SOT323 Maximum Ratings
|
Original
|
PDF
|
BF771W
VSO05561
OT323
Jun-27-2001
RBS 200
BF771W
VSO05561
|
Untitled
Abstract: No abstract text available
Text: BFR92W NPN Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
PDF
|
BFR92W
VSO05561
OT323
|
Untitled
Abstract: No abstract text available
Text: BFR280W NPN Silicon RF Transistor 3 For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2 mA to 8 m fT = 7.5 GHz 2 F = 1.5 dB at 900 MHz 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
PDF
|
BFR280W
VSO05561
OT323
|
VSO05561
Abstract: No abstract text available
Text: BCR 185W PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R 1=10kΩ, R2=47kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR 185W WNs Pin Configuration 1=B 2=E Package
|
Original
|
PDF
|
VSO05561
EHA07183
OT-323
Oct-19-1999
VSO05561
|
Untitled
Abstract: No abstract text available
Text: BFS17W NPN Silicon RF Transistor 3 For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17W MCs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage
|
Original
|
PDF
|
BFS17W
VSO05561
OT323
|