VTB1012B Search Results

Contextual Info: VTB Process Photodiodes VTB1012B, 1013B PACKAGE DIMENSIONS inch mm CASE 17 TO-46 HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. The package

VTB1012BH

Abstract: VTB1013BH dual photodiode
Contextual Info: VTB Process Photodiode VTB1012BH, 1013BH PACKAGE DIMENSIONS inch mm CASE 17 TO-46 HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. The package

Contextual Info: VTB Process Photodiode VTB1012BH, 1013BH PACKAGE DIMENSIONS inch mm CASE 17 TO-46 HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. The package

1013B

Abstract: VTB1013B VTB1012B
Contextual Info: VTB Process Photodiodes VTB1012B, 1013B PACKAGE DIMENSIONS inch mm CASE 17 TO-46 HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. The package

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

VTB1012BI

Abstract: VTB1013BI
Contextual Info: StiE D BOBGbQi Q0Q1G3D IVCT SOT 'V ' 1 V T B 1 0 1 2 B I , 13BI VTB Process Photodiodes E G 8« 6 V A C T E C PACKAGE D IM EN SIO N S inch mm PRODUCT DESCRIPTIO N Small area planar silicon photodiode in a “flat" window, dual lead TO-46 pack­ age. The package incorporates an in­

Vactec

Abstract: dual photodiode VTB1012BI VTB1013BI k420
Contextual Info: 5L.E ]> • 303DbGT 00G1G3D ÔOT « V C T VTB Process Photodiodes T ' 4^' 6 I V T B 1 0 1 2 B I , 1 3B I E G 8, G VACTEC " PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 18 TO-46 HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) Small area planar silicon photodiode in

1013B

Abstract: VTB1012B
Contextual Info: VTB Process Photodiodes V T B 1 0 1 2 B , 1013B PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 17 Small area planar silicon photodiode in a “flat" window, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes

Contextual Info: VT B 1 0 1 2B , 1013B VTB Process Photodiodes PACKAGE DIMENSIONS inch mm * ïtst PRODUCT DESCRIPTION CASE 17 ABSOLUTE MAXIMUM RATINGS Storage Temperature: -4 0 °C to 110°C Operating Temperature: -4 0 °C to 1 10°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C

VTB8440

Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
Contextual Info: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue

VTP1220FBH

Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
Contextual Info: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0