VTB6061UVJ Search Results

Contextual Info: VTB Process Photodiodes VTB6061UVJH PACKAGE DIMENSIONS inch mm CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a three lead TO-8 package with a UV transmitting window. Chip is isolated from case. Third lead is

Contextual Info: VTB Process Photodiodes VTB6061UVJ PACKAGE DIMENSIONS inch mm CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a three lead TO-8 package with a UV transmitting window. Chip is isolated from case. Third lead is

Contextual Info: VTB6061UVJ VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION C A S E 16A Large area planar silicon photodiode in a three lead TO-8 package with a UV transmitting window. Chip is isolated from case. Third lead is grounded to case. These diodes have very high shunt

VTB6061UVJH

Abstract: D92-02 uv led 365
Contextual Info: VTB Process Photodiodes VTB6061UVJH PACKAGE DIMENSIONS inch mm CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a three lead TO-8 package with a UV transmitting window. Chip is isolated from case. Third lead is

D92-02

Abstract: d9202 uv led 365 VTB6061UVJ
Contextual Info: VTB Process Photodiodes VTB6061UVJ PACKAGE DIMENSIONS inch mm CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a three lead TO-8 package with a UV transmitting window. Chip is isolated from case. Third lead is

UV diode 365 nm

Abstract: UV led 200 nm peak uv led 365 VTB6061UVJ
Contextual Info: VTB6061UVJ VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION C ASE IS A Large area planar silicon photodiode in a three lead TO -8 package with a UV transmitting window. Chip is isolated from case. Third lead is grounded to case. These diodes have very high shunt

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

VTB6060UVJ

Abstract: VTB6061UVJ
Contextual Info: SbE D BGaGbDT DDOIDHT Tflb I VCT VTB6060UVJ, 1UVJ VTB Process Photodiodes E G & G V AC TE C T -4 1 -5 1 PACKAGE D IM EN SIO N S inch mm PRODUCT DESCRIPTION Large area planar silicon photodiode in a three lead TO-8 package with a UV transmitting window. Chip is isolated

TB505

Contextual Info: VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS PRODUCT DESCRIPTION FEATURES • • • • • This series of P on N silico n d iod es is primarily intended for use in the photovoltaic mode but may be used with a small reverse bias. The diod es have

VTB8440

Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
Contextual Info: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue

VTP1220FBH

Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
Contextual Info: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0

5041J

Abstract: photodiode vtb 5041 VTB8440B operational amplifier-741 thermopile array 5050J VTB1013B VTB8444B 9415B VTB1012B
Contextual Info: This Material VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS Copyrighted P R O D U C T D ESC RIPTIO N FEATURES • Enhanced UV to IR spectral range. • Integral IR rejection filters available • No UV enhancement- By Its • Response @ 220 nm, 0.06 A/W, Typ with