VTE1163 Search Results

VTE1163 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
VTE1163		PerkinElmer Optoelectronics	GaAlAs Infrared Emitting Diode	Original	PDF	22.92KB	1
VTE1163		EG&G	HIGH POWER GaAIAs INFRARED EMITTING DIODES 880 nm	Scan	PDF	186.62KB	2
VTE1163		EG&G Vactec	GaAlAs Infrared Emitting Diodes	Scan	PDF	78.23KB	1

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Excelitas Technologies Corporation


Excelitas Technologies Corporation VTE1163H Ir Emitter, 880Nm, 4.78Mm, To-46-2, Though Hole; Viewing Angle:10°; Diode Case Style:To-46; Forward Current If(Av):100Ma; Forward Voltage Vf Max:2.8V; Rise Time:1Μs; Fall Time Tf:1Μs; Operating Temperature Min:-55°C; Product Range:- Rohs Compliant: Yes \|Excelitas Tech VTE1163H
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	VTE1163H	Bulk			500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

VTE1163 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
VTE1163 Abstract: VTE1166 VTE1168 Contextual Info: SbE D 3 D 3 D b P q 0 0 0 1 2 1 7 13a Bi VCT GaAIAs Infrared Em itting Diodes VTE1163 TO-46 Lensed Package — 880 nm T- MV- I3 E G & G VACT EC « PAC K AG E DIMENSIONS inch mm CA SE 24 DESCRIPTION TO-46 HERMETIC (LENSED) CHIP SIZE: .018- x .018- This narrow beam angle TO-46 hermetic emit	OCR Scan	VTE1163 018-X VTE1163 VTE1166 VTE1168	PDF
Contextual Info: GaAlAs Infrared Emitting Diodes VTE1163H TO-46 Lensed Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip	Original	VTE1163H	PDF
VTE1163H Abstract: 880nm Contextual Info: GaAlAs Infrared Emitting Diodes VTE1163H TO-46 Lensed Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip	Original	VTE1163H VTE1163H 880nm	PDF
VTE1163 Contextual Info: GaAlAs Infrared Emitting Diodes VTE1163 TO-46 Lensed Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip	Original	VTE1163 VTE1163	PDF
C1383 NPN transistor collector base and emitter Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,	Original	10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383	PDF
H0A0872-n55 Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12 Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1	OCR Scan	1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12	PDF
VTE1063 Abstract: VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285 Contextual Info: infrared emitting diodes Features 880 nm • Nine standard packages in hermetic and low-cost epoxy • End- and side-radiating packages • Graded Output • High efficiency GaAIAs, 880 nm LPE process Delivers twice the power of conventional GaAs 940 nm emitters	Original	VTE7172 VTE7173 VTE1013 VTE1113 VTE3322LA VTE3324LA VTE3372LA VTE3374LA VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285	PDF
VTE1291-2 Abstract: VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 Contextual Info: GaAlAs Infrared Emitting Diodes VTE1063 TO-46 Flat Window Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" x .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher	Original	VTE1063 VTE7172 VTE7173 VTE1291-2 VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2	PDF
Contextual Info: SbE D 3D 3 D b 0 q Ü G G 1 S 1 7 13fl * V C T GaAIAs Infrared Emitting Diodes V T E 1 1 6 3 , 66, 68 TO-46 Lensed Package — 880 nm T-41-I3 E G 8. G VACTE C PACKAGE DIMENSIONS inch mm til CASE 24 DESCRIPTION TO-46 HERMETIC (LENSED) CHIP SIZE:.01 S 'x .01 S'	OCR Scan	T-41-I3 Coe11icient VTE1163 VTE1166 VTE1168	PDF