VTH MOS Search Results

Contextual Info: HN1L02FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L02FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common 2.5V gate drive Low threshold voltage Q1: Vth = 0.5~1.5V High speed Q2: Vth =−0.5~−1.5V

HN1L03FU

Contextual Info: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common Low threshold voltage Q1: Vth = 0.8~2.5V High speed Q2: Vth =−0.5~−1.5V Small package

Pch MOS FET

Abstract: HN1L03FU
Contextual Info: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common Low threshold voltage Q1: Vth = 0.8~2.5V High speed Q2: Vth =−0.5~−1.5V Small package

Pch MOS FET

Contextual Info: HN1L02FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L02FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common 2.5V gate drive Low threshold voltage Q1: Vth = 0.5~1.5V High speed Q2: Vth =−0.5~−1.5V

HN1L03FU

Contextual Info: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU Unit in mm High Speed Switching Applications Analog Switch Applications Q1, Q2 common z Low threshold voltage Q1: Vth = 0.8~2.5V z High speed Q2: Vth =−0.5~−1.5V z Small package

HN1L03FU

Abstract: FET MARKING Silicon NP Channel MOS FET High Speed Power Switching
Contextual Info: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common z Low threshold voltage Q1: Vth = 0.8~2.5V z High speed Q2: Vth =−0.5~−1.5V z Small package

Pch MOS FET

Abstract: HN1L03FU
Contextual Info: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common l Low threshold voltage Q1: Vth = 0.8~2.5V l High speed Q2: Vth =−0.5~−1.5V l Small package

Contextual Info: HN1L03FU TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-P CHANNEL MOS TYPE HN1L03FU HIGH SPEED SWITCHING APPLICATIONS U nit in mm ANAROG SWITCH APPLICATIONS Q l, Q2 COMMON • Low Threshold Voltage Q l : Vth = 0 .8 -2 .5 V Q2 : Vth = - 0 . 5 ~ - l . 5 V

HN1L02FU

Contextual Info: HN1L02FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L02FU Unit in mm High Speed Switching Applications Analog Switch Applications Q1, Q2 common z 2.5V gate drive z Low threshold voltage Q1: Vth = 0.5~1.5V z High speed Q2: Vth =−0.5~−1.5V

Contextual Info: HN1L02FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L02FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common z 2.5V gate drive z Low threshold voltage Q1: Vth = 0.5~1.5V z High speed Q2: Vth =−0.5~−1.5V

Pch MOS FET

Abstract: HN1L02FU
Contextual Info: HN1L02FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L02FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common l 2.5V gate drive l Low threshold voltage Q1: Vth = 0.5~1.5V l High speed Q2: Vth =−0.5~−1.5V

Contextual Info: SEMICONDUCTOR KTK5132V TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=0.5～1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode.

Contextual Info: SEMICONDUCTOR KTK5131E TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=0.5～1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode.

KTK5132E

Contextual Info: KTK5132E SEMICONDUCTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS E FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=0.5～1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode.

ktk5132u

Abstract: ktk5
Contextual Info: SEMICONDUCTOR KTK5132U TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS E FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=0.5～1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode.

Contextual Info: SEMICONDUCTOR KTK5132E TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=0.5～1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode.

Contextual Info: SEMICONDUCTOR KTK7132E TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=0.5～1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode.

Contextual Info: SEMICONDUCTOR KTK5164U TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=0.5～1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode.

Contextual Info: SEMICONDUCTOR KTK7132E TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=0.5～1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode.

Contextual Info: SEMICONDUCTOR KTK5131S TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=0.5～1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode.

STJ828SF

Contextual Info: STJ828SF Semiconductor P-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch applications. Features • -2.5V Gate drive. • Low threshold voltage : Vth = -0.5~ -1.5V. • High speed. Ordering Information Type NO.

2SJ342

Abstract: 2SK1825
Contextual Info: TOSHIBA 2SJ342 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2SJ342 ANAROG SWITCH APPLICATIONS Low Threshold Voltage : Vth = - 0 .8 - - 2.5 V High Speed Enhancement-Mode Small Package Complementary to 2SK1825

STJ828UF

Abstract: kst30
Contextual Info: STJ828UF Semiconductor P-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • -2.5V Gate drive. • Low threshold voltage : Vth = -0.5~ -1.5V. • High speed. Ordering Information Type NO.

STJ828M

Contextual Info: STJ828M Semiconductor P-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • -2.5V Gate drive. • Low threshold voltage : Vth = -0.5~ -1.5V. • High speed. Ordering Information Type NO.