VTP4085 Search Results

Contextual Info: 5bE ]> 3 D 3 0 b m OOOIQ?1* D31 « V C T VTP4085, 5H, 5S VTP Process Photodiodes E 6 & G VACTEC T-4 1-5 1 PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC CHIP ACTIVE AREA: .032 in2 (21 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode mounted on a two lead ceramic sub­

Contextual Info: VTP4085, 4085S VTP Process Photodiodes PACKAGE DIMENSIONS inch mm .265 ( 6 . 73 ) .067 ( 1 .70 ) ( 0 . 51 ) CASE 13 CERAMIC PRODUCT DESCRIPTION Large area planar silicon photodiode mounted on a two lead ceramic sub­ strate and coated with a layer of clear

VTP4085

Abstract: VTP4085S
Contextual Info: VTP Process Photodiodes VTP4085, 4085S PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC CHIP ACTIVE AREA: .032 in2 (21 mm2) PRODUCT DESCRIPTION Large area planar silicon mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. Low junction capacitance permits

VTP4085H

Contextual Info: VTP Process Photodiodes VTP4085H, 4085SH PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC CHIP ACTIVE AREA: .032 in2 (21 mm2) PRODUCT DESCRIPTION Large area planar silicon mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. Low junction capacitance permits

Contextual Info: VTP Process Photodiodes VTP4085H, 4085SH PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC CHIP ACTIVE AREA: .032 in2 (21 mm2) PRODUCT DESCRIPTION Large area planar silicon mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. Low junction capacitance permits

Contextual Info: VTP Process Photodiodes VTP4085, 4085S PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC CHIP ACTIVE AREA: .032 in2 (21 mm2) PRODUCT DESCRIPTION Large area planar silicon mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. Low junction capacitance permits

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

VTP8651

Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
Contextual Info: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).

photodiode ge

Abstract: VTP4085
Contextual Info: 5bE a o a O b O 1! D 0 Ü1 G7 4 Ü31 • VCT J> VTP Process Photodiodes V T P4 085 , 5H, 5S E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC CHIP ACTIVE AREA: .032 in2 (21 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode mounted on a two lead ceramic sub­

VTP1220FBH

Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
Contextual Info: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0

Vactec

Abstract: VTP4085 VTP4085S
Contextual Info: VTP Process Photodiodes V T P 4085, 4085S PACKAGE DIMENSIONS inch mm .067 (1 .7 0 ) .305 ( 7 . 7 5 ) CASE 13 (0 . 5 1 ) CERAMIC CHIP ACTIVE AREA: .032 in2 ¡21 ram2) PRODUCT DESCRIPTION Large area planar silicon photodiode mounted on a two lead ceramic sub­