N5256AW12
Abstract: N5256AW10 N5260-60003 N5256AW15 N5257AR10 N5260
Text: Agilent Technologies N5256/7/8A Millimeter-wave Modules User’s Guide Use this manual with the following document: Technical Overview 5989-7620EN Millimeter Modules N5256AW01, W02, W03, W05, W06, W08, W10, W12, W15, W22, X10, X12, N5257AR02, R03, R05, R06, R08, R10, R12, R15, R22
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N5256/7/8A
5989-7620EN
N5256AW01,
N5257AR02,
N5258AD02,
N5256-90001
N5256AW12
N5256AW10
N5260-60003
N5256AW15
N5257AR10
N5260
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Untitled
Abstract: No abstract text available
Text: 256K x 16 EDO DRAM MT4C16270 DRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process
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512-cycle
MT4C16270
40-Pin
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Untitled
Abstract: No abstract text available
Text: 256K x 16 EDO DRAM TECHNOLOGY, INC. MT4C16270 DRAM FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • All inputs, outputs and clocks are TTL-compatible
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MT4C16270
512-cycle
40-Pin
MT4C16270DJ-4
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MT4C16270
Abstract: MT4C16270DJ-4
Text: OBSOLETE 256K x 16 EDO DRAM MT4C16270 DRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process
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MT4C16270
512-cycle
40-Pin
MT4C16270
MT4C16270DJ-4
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MT4C16270DJ-4
Abstract: MT4C16270
Text: MT4C16270 256K x 16 DRAM TECHNOLOGY, INC. DRAM 256K x 16 DRAM 5V, EDO PAGE MODE FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • Low power, 3mW standby; 300mW active, typical
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MT4C16270
300mW
512-cycle
40-Pin
MT4C16270DJ-4
MT4C16270
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MT4C16270DJ-5
Abstract: MT4C16270
Text: MT4C16270 256K x 16 DRAM TECHNOLOGY, INC. DRAM 256K x 16 DRAM 5V, EDO PAGE MODE FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • Low power, 3mW standby; 300mW active, typical
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MT4C16270
300mW
512-cycle
40-Pin
MT4C16270DJ-5
MT4C16270
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w04 rectifier
Abstract: marking w04 w04 rectifier bridge W02 rectifier
Text: Formosa MS Bridge Rectifier W005 THRU W10 List List. 1 Package outline. 2 Features. 2
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MIL-STD-750D
METHOD-1036
JESD22-A102
METHOD-1051
METHOD-4066-2
1000hrs.
METHOD-1021
w04 rectifier
marking w04
w04 rectifier bridge
W02 rectifier
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marking CODE W04
Abstract: W04 bridge rectifier w08 bridge rectifier bridge rectifier w02 w08 MARKING MARKING W04 W04 54 w04 marking w02 rectifier bridge transistor w04
Text: Formosa MS Bridge Rectifier W00 THRU W10 List List. 1 Package outline. 2 Features. 2
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MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
1000hrs.
METHOD-1038
175OC
marking CODE W04
W04 bridge rectifier
w08 bridge rectifier
bridge rectifier w02
w08 MARKING
MARKING W04
W04 54
w04 marking
w02 rectifier bridge
transistor w04
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transistor w06
Abstract: marking code w06 transistor CBTD3306 CBTD3306D CBTD3306PW w06 transistor marking W06
Text: CBTD3306 Dual bus switch with level shifting Rev. 04 — 25 March 2010 Product data sheet 1. General description The CBTD3306 dual FET bus switch features independent line switches. Each switch is disabled when the associated output enable nOE input is HIGH.
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CBTD3306
CBTD3306
JESD78B
JESD22-A114F
JESD22-C101E
transistor w06
marking code w06 transistor
CBTD3306D
CBTD3306PW
w06 transistor
marking W06
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BRIDGE-RECTIFIER w10
Abstract: w08 marking transistor marking w04 W04 bridge rectifier rectifier bridge w10 marking W04 W08 marking diode 202E W005 w04 marking
Text: W005 THRU W10 SINGLE PHASE SILICON BRIDGE RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5 Ampere FEATURES ● ● ● WOB Ideal for printed circuit board Surge overload rating: 50A peak High case dielectric strength MECHANICAL DATA Case: UL-94 Class V-0 recognized Flame Retardant Epoxy
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UL-94
300us
BRIDGE-RECTIFIER w10
w08 marking
transistor marking w04
W04 bridge rectifier
rectifier bridge w10
marking W04
W08 marking diode
202E
W005
w04 marking
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bwz06
Abstract: BZW06P10 diode bzw06-14 BZW06 7V0 BZW06P33B bzw06p376 BZW06P
Text: BZW06-5V8,B/376,B BZW06P5V8,B/376,B TRANSILTM FEATURES PEAK PULSE POWER= 600 W @ 1ms STAND-OFF VOLTAGE RANGE : From 5V8 to 376 V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED F126 Plastic DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transients makes them particularly
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BZW06-5V8
B/376
BZW06P5V8
bwz06
BZW06P10
diode bzw06-14
BZW06 7V0
BZW06P33B
bzw06p376
BZW06P
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nitto SWT 10
Abstract: nitto SWT-20 W07 sot 23 w04 transistor sot 23 UE-111AJ W04 sot 23 transistor w07 transistor marking w08 marking W07 transistor marking w04
Text: PRODUCT CODING SYSTEM QSP0005_WEB.028 1 2.4.2007 Page 1 of 6 GENERAL AND DEFINITIONS This procedure defines the identification system for MAS products. The following abbreviations are used in this document. ESD EWS ID MAS MBB T&R 2 Electrostatic Sensitive Device
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QSP0005
MAS1234AB3
MAS1234AB3xxxxx)
98AA2
MAS9198AA2xxxxx)
nitto SWT 10
nitto SWT-20
W07 sot 23
w04 transistor sot 23
UE-111AJ
W04 sot 23
transistor w07
transistor marking w08
marking W07
transistor marking w04
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CBD3306
Abstract: sot902 marking w06 D306 tssop8 CBTD3306
Text: CBTD3306 Dual bus switch with level shifting Rev. 8 — 1 May 2012 Product data sheet 1. General description The CBTD3306 dual FET bus switch features independent line switches. Each switch is disabled when the associated output enable nOE input is HIGH.
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CBTD3306
CBTD3306
JESD78B
JESD22-A114F
JESD22-C101E
CBTD3306D
CBD3306
sot902
marking w06
D306 tssop8
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CBTD3306
Abstract: No abstract text available
Text: CBTD3306 Dual bus switch with level shifting Rev. 8 — 1 May 2012 Product data sheet 1. General description The CBTD3306 dual FET bus switch features independent line switches. Each switch is disabled when the associated output enable nOE input is HIGH.
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CBTD3306
CBTD3306
JESD78B
JESD22-A114F
JESD22-C101E
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JESD22-C101E
Abstract: CBTD3306 CBTD3306D CBTD3306PW D306 FET marking codes 1B
Text: CBTD3306 Dual bus switch with level shifting Rev. 5 — 28 April 2011 Product data sheet 1. General description The CBTD3306 dual FET bus switch features independent line switches. Each switch is disabled when the associated output enable nOE input is HIGH.
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CBTD3306
CBTD3306
JESD78B
JESD22-A114F
JESD22-C101E
CBTD3306D
CBTD3306PW
D306
FET marking codes 1B
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IBM25CPC700DB3A83
Abstract: DH27 DH06 DH07 IBM25CPC700DB3A83Z ae02 marking dh03 marking CODE W04 ae09 MARKING CODE k07
Text: . CPC700 Memory Controller and PCI Bridge Features • PowerPC 60x/7xx bus. • 66.66 MHz • 83.33 MHz • Synchronous DRAM interface operates at the processor bus speed with support for ECC. • PCI Revision 2.1 Compliant Interface. • ROM/SRAM/External peripheral controller.
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CPC700
60x/7xx
32-bit
25MHz
CPC700
IBM25CPC700DB3A83
DH27
DH06
DH07
IBM25CPC700DB3A83Z
ae02 marking
dh03
marking CODE W04
ae09
MARKING CODE k07
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T4C16270
Abstract: T4C16270DJ
Text: |U|IC=RON 256K M T4C16270 X 16 DRAM 256K x 16 DRAM DRAM FEATURES PIN ASSIGNMENT Top View • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply* • Low power, 3m W standby; 300m W active, typical
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T4C16270
512-cycle
40-Pin
MT4C16270
MT4C16870
T4C16270DJ
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Untitled
Abstract: No abstract text available
Text: MT4C16270 256K X 16 DRAM MICRON I TECHNOLOGY. INC. 256K x 16 DRAM DRAM 5V, EDO PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply*
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OCR Scan
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PDF
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MT4C16270
300mW
512-cycle
40-Pin
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Untitled
Abstract: No abstract text available
Text: |U |IC R O N MT4C16270 256KX 16 DRAM 2 5 6 K x 16 DRAM DRAM 5V, EDO PAGE MODE • Industry-standard x l6 pinouts, tim ing, functions and packages • High-performance CM O S silicon-gate process • Single +5V +10% pow er supply* • Low power, 3m W standby; 300m W active, typical
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PDF
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MT4C16270
256KX
512-cycle
40-Pin
t2/95
00133m
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Untitled
Abstract: No abstract text available
Text: 2 5 6 K X 16 EDO DRAM |uiic: r o n MT4C16270 DRAM FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • All inputs, outputs and clocks are TTL-compatible
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PDF
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MT4C16270
512-cycle
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Untitled
Abstract: No abstract text available
Text: 2 5 6 K X 16 EDO DRA M [M IC R O N DRAM M T 4C 16270 FEATURES • Industry-standard x l6 pinouts, tim ing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% pow er supply* • A ll inputs, outputs and clocks are TTL-com patible
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OCR Scan
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PDF
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512-cycle
40-Pin
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Untitled
Abstract: No abstract text available
Text: MT4C16270 256K x 16 DRAM MICRON I TECHNOLOGY, NIC. DRAM 256K x 16 DRAM 5V, EDO PAGE MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • Low power, 3mW standby; 300mW active, typical
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OCR Scan
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PDF
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MT4C16270
300mW
512-cycle
MT4C16270D
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MT4C16270DJ-7
Abstract: No abstract text available
Text: MICRON I 256K TECHNOLOGY. INC DRAM MT4C16270 X 16 DRAM 2 5 6 K X 16 D R A M m 5V, EDO PAGE MODE o O FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply*
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OCR Scan
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PDF
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MT4C16270
40-Pin
300mW
512-cycle
MT4C16270DJ-7
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Untitled
Abstract: No abstract text available
Text: MT4C16270 256K X 16 DRAM MICRON DRAM 256K x 16 DRAM 5V, EDO PAGE MODE PIN ASSIGNMENT (Top View • In d u stry-stan d ard x l 6 p in o u ts, tim in g , fu nction s an d p ackages • H ig h -p erfo rm a n ce C M O S silico n -g a te p ro cess • Sin g le + 5 V ± 1 0 % p o w er su p p ly*
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MT4C16270
512-cycle
40-Pin
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