W16 70 Search Results

FV5T-016

Abstract: 470 pF 400V 470 uf 400V ec jf FVST-064
Contextual Info: _ P R E M O FVST RFI Power Line Filters Three Phase Double Stage ElectricaJ schematics OJyfcjf 6/W16 Amp General Specifications Maximum operating voltage: 520Vac. Operating frequency: D C - 60Hz. Hipot test voltage: L/N->PE: 3000Vdc 2s.

Contextual Info: PREM O FVST RFI Power Line Filters Three Phase Double Stage ElectricaJ schematics OJyfcjf 6/W16 Amp o o 2 L2 - < lïïiïïT “S i General Specifications Maximum operating voltage: 520Vac. Operating frequency: D C - 60Hz. Hipot test voltage: L/N->PE: 3000Vdc 2s.

PD-1503

Abstract: pd1503 h24 sot23-6 MS-026C PBGA272 MO-153-AB PD1002 MO-194AF NA-256 PD1704
Contextual Info: SSOP SSOP H20 H24 TSSOP L8 L20 A56 L14 L24 L16 L28 Q16 Q24 Q20 Q28 TFBGA NC64 SOIC W8 S24 PDIP W14 P20 S28 V56 A48 QSOP SOIC W16 H28 TSSOP S16 V48 BQSOP K56 B48 K48 B40 SOT23 T5 C6 T6 NA256 PBGA MSOP ZB56 PLCC J44 NA272 LFBGA NB64 NB96 NB114 U8 QFN J32 B80

U100

Abstract: MB91F469 P-316 P356 b20 p03
Contextual Info: 1 2 3 4 5 R100 6 8 7 MONCLK GND X0 X1 A1 D8 D13 D17 A20 H17 N17 U17 Y20 Y15 U13 U8 U4 Y1 N4 H4 D4 Y19 Y18 Y17 D6 D11 D15 F17 L17 R17 U15 U10 U6 R4 K4 F4 A16 A15 A18 T19 R18 M19 N20 W17 W16 U14 V14 W15 C16 C15 Y16 U16 V17 V16 V15 G18 G17 F19 F18 E20 E19 E18

cf 455

Abstract: 455 XTAL cf 455 a fm 485 Delta W16 transistor w16 CMX7031 cf-455 PE0201 4C00
Contextual Info: Application Note CML Microcircuits COMMUNICATION SEMICONDUCTORS CMX7031 Synthesiser Lock Time Publication: AN/2WR/7031SYNTH/1 March 2006 1 Introduction This document has been produced to illustrate the performance of the integrated synthesisers used in the CMX7031 Two-Way Radio Processor IC.

27C512

Abstract: CY27C512 CY27C512-150WC 27C512-70
Contextual Info: ¥ CYPRESS Features • C M O S for optim um speed/pow er • High speed — tAA = 70 n s max. Low power • — 220 m W m ax. — L ess than 85 mW w hen d eselected • Byte-w ide m em ory organization • 100% reprogram m able in the w indow ed package •

27C512

Abstract: 27C512-15 27C512-150 eprom 27C512 CY27C512
Contextual Info: r CYPRESS 64Kx 8 CMOS EPROM Functional Description Features • CMOS for optimum speed/power • High speed — t.v\ = 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the

Contextual Info: CYPRESS 64K x 8 CMOS EPROM Functional Description Features • CMOS for optimum speed/power • High speed — t*A = 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the

27C512-70

Abstract: 1N3064 27C512 27C512-150 CY27C512 CY27C512-150WC
Contextual Info: ?/ CYPRESS 64Kx 8 CMOS EPROM Functional Description Features • CMOS for optimum speed/power • High speed — t.v\ = 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the

Contextual Info: à * T7CC1 CY27C512 ADVANCED INFORMATION C Y r n h o o 64K x 8 CMOS EPROM Features Functional D escription • CMOS for optimum speed/power • High speed — Iaa - 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization

27C64 8k EPROM

Abstract: ic 27c64 27c642
Contextual Info: CY27C64 8K x 8 EPROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 70 ns commercial Functional Description The CY27C64 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY27C64 automatically

27C64 8k EPROM

Abstract: eprom 27c64 27C64 27C64-20 7258 P15 Package CY27C64 CY7C266 200JC
Contextual Info: CY27C64 F / CYPRESS 8K x 8 EPROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 70 ns commercial Functional D escription • Low power — 440 mW (commercial) — 530 mW (military) • Super low standby power

27C64-120

Abstract: 27C64-70 27C64 CY27C64 CY7C266 27C6470 27C61 27C64-90
Contextual Info: CY27C64 F / CYPRESS 8K x 8 EPROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 70 ns commercial Functional D escription • Low power — 440 mW (commercial) — 530 mW (military) • Super low standby power

Contextual Info: TOSHIBA TC514273BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514273BJ is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514273BJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques

intel topside mark

Abstract: TE28F160S5-70 28F160S3 28F160S5 28F320S3 28F320S5 DT28F320S3-110 DT28F320S3-140 DT28F320S5-90 dt28f160s570
Contextual Info: WORD-WIDE FlashFile MEMORY FAMILY 28F160S3, 28F160S5 28F320S3, 28F320S5 SPECIFICATION UPDATE Release Date: November 1998 Order Number: 297849-009 The 28F160S3, 28F320S3, 28F160S5 and 28F320S5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current

DT28F160S5-70

Abstract: DT28F320S5-90 TE28F160S5-70 DT28F320S3-110 w16 90 TE28F160S3-100 PBT-GF30 transistor w16 28F160S5 28F320S5
Contextual Info: 3 VOLT AND 5 VOLT FlashFile MEMORY 28F160S3, 28F160S5 28F320S3, 28F320S5 x8/x16 SPECIFICATION UPDATE Release Date: February, 1999 Order Number: 297849-010 The 28F160S3, 28F320S3, 28F160S5 and 28F320S5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current

TE28F160S5-70

Abstract: 28F160S5 DT28F160S5-70 DT28F320S5-90 28F160S5-70 te28f160s3-100 w16 90 DT28F160S3-75 28F160S3 28F320S3
Contextual Info: 3 Volt and 5 Volt FlashFile Memory 28F160S3, 28F320S3, 28F160S5, 28F320S5 x8/x16 Specification Update July 1999 Notice: The 28F160S3, 28F320S3, 28F160S5 and 28F320S5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications.

CY27C256A-45WMB

Abstract: w16 06 CY27C256A-45JC CY27C256A-45PC CY27C256A-45QMB CY27C256A-45WC CY27C256A-45ZC CY27C256A-55JC CY27C256A-70WC CY27C256A-90JC
Contextual Info: fax id: 3026 CY27C256A 1-Megabit 32K x 8 CMOS EPROM Features • • • • • • windowed packages (28-pin hermetic DIP and 32-pin LCC) which allow the device to be erased with UV light for 100% reprogrammability. Very fast read access time: (45−200 ns)

CY27C256A-45JC

Abstract: CY27C256A-45PC CY27C256A-45QMB CY27C256A-45WC CY27C256A-45WMB CY27C256A-45ZC CY27C256A-55JC
Contextual Info: fax id: 3026 1CY 27C2 56 A CY27C256A 32K x 8 CMOS EPROM Features • • • • • • windowed packages 28-pin hermetic DIP and 32-pin LCC which allow the device to be erased with UV light for 100% reprogrammability. Very fast read access time: (45−200 ns)

Delta W16

Abstract: 27C128 C128 CY27C128 27C128-45
Contextual Info: CY27C128 128K 16K x 8ĆBit CMOS EPROM CY27C128 automatically powers down into a lowĆpower standĆby mode. The CY27C128 is packaged in the industry standard 600Ćmil DIP and LCC packages. military) The CY27C128 is also available in a CerĆ D Low power DIP package equipped with an erasure

27C128

Abstract: 27C128-200 eprom 27C128 27C128 eprom transistor C128 27C1 C128 CY27C128 c1281
Contextual Info: fax id: 3011 1CY 27C1 28 CY27C128 128K 16K x 8-Bit CMOS EPROM Features CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the EPROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and byte-wide intelligent programming algorithms.

Contextual Info: CY27C256A 5 H S F J? p Y P P p c q J,. 1. I ,L,¿ k 3 k.^3 32K x 8 CMOS EPROM Features • • • • • • Very fast read access time: 4 5 -200 ns 5V ± 10% power supply Capable of withstanding >2001V ESD Latch-up protection up to 200 mA Two line control functions to prevent bus contention

C5121

Abstract: C5127 C512 CY27C512 CY27C512-45JC CY27C512-45PC CY27C512-45QMB CY27C512-45WC CY27C512-45WMB CY27C512-45ZC
Contextual Info: fax id: 3019 1CY 27C5 12 CY27C512 64K x 8 CMOS EPROM Features • • • • • • Very Fast Read Access Time: 45 - 200 ns 5V ± 10% Power Supply Capable of withstanding >2001V ESD Latch-up Protection up to 200mA Two line control functions to prevent bus contention

Contextual Info: CY27C128 '0 C Y PR ESS 128K 16K x 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns (commercial and military) • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected • ±10% Power supply tolerance