W16 PLC Search Results

PD-1503

Abstract: pd1503 h24 sot23-6 MS-026C PBGA272 MO-153-AB PD1002 MO-194AF NA-256 PD1704
Contextual Info: SSOP SSOP H20 H24 TSSOP L8 L20 A56 L14 L24 L16 L28 Q16 Q24 Q20 Q28 TFBGA NC64 SOIC W8 S24 PDIP W14 P20 S28 V56 A48 QSOP SOIC W16 H28 TSSOP S16 V48 BQSOP K56 B48 K48 B40 SOT23 T5 C6 T6 NA256 PBGA MSOP ZB56 PLCC J44 NA272 LFBGA NB64 NB96 NB114 U8 QFN J32 B80

27C256-200

Abstract: CY27C256 27C256 27C256-45 27C256-70 27C256-150 27c256 cypress 27C256200 eprom 27c256 28 PIN DIP 150 NS
Contextual Info: CY27C256 32K x 8ĆBit CMOS EPROM into a lowĆpower standĆby mode. The and low current requirements allow for CY27C256 is packaged in the industry gang programming. The EPROM cells alĆ standard 600Ćmil DIP, PLCC, and TSOP low each memory location to be tested

Contextual Info: CY27C256 y CYPRESS 32K x 8-Bit CMOS EPROM into a low-power stand-by mode. The CY27C256 is packaged in the industry standard 600-mil DIP, PLCC, and TSO P packages. T he CY27C256 is also available in a C erD IP package equipped with an erasure window to provide for reprogram ­

CY27C256A-120WC

Abstract: c256a CY27C256A-90WC CY27C256A-90JC CY27C256A-200PC 1N3064 CY27C256A-120PC W16 O4
Contextual Info: fax id: 3026 CY27C256A 32K x 8 CMOS EPROM Features 28-pin, 600-mil DIP, 32-pin LCC and PLCC, and 28-pin TSOP-I packages. The CY27C256A is available in windowed and opaque packages. Windowed packages allow the device to be erased with UV light for 100% reprogrammability.

C5121

Abstract: c5125 C5126 1N3064 27C512-120 27C512-150 C512 CY27C512 C5124 CY27C512-150PC
Contextual Info: ADVANCED INFORMATION CY27C512 64K x 8 CMOS EPROM Functional Description Features D D D D D The CY27C512 is a highĆperformance, 512K CMOS EPROM organized in 64 Kbytes. It is available in industryĆstandard 28Ćpin, 600Ćmil DIP, 32Ćpin LCC and PLCC, and 28Ćpin TSOPĆI packages. The

Contextual Info: fax id: 3026 CY27C256A w CYPRESS 32K x 8 CMOS EPROM Features 28-pin, 600-mil DIP, 32-pin LCC and PLCC, and 28-pin TSOP-I packages. The CY27C256A is available in windowed and opaque packages. Windowed packages allow the device to be erased with UV light for 100% reprogrammability.

Contextual Info: fax id: 3026 izzszzzs? ¿¡à w ,rnn ir~îo o L > 1 1 r i ï L O 0Y270256A D - 32K x 8 CMOS EPROM Features 28-pin, 600-mil DIP, 32-pin LCC and PLCC, and 28-pin TSOP-I packages. The CY27C256A is available in windowed and opaque packages. W indowed packages allow the device to be

32k nsk 2 pins

Contextual Info: fax id: 3026 -W C Y 2 7 C2 5 6 A CYPRESS 32K x 8 CMOS EPROM 28-pin, 600-mil DIP, 32-pin LCC and PLCC, and 28-pin TSOP-I packages. The CY27C256A is available in windowed and opaque packages. Windowed packages allow the device to be erased with UV light tor 100% reprogrammability.

27h256

Abstract: h2566 H2567 CY27H256-70LMB CY27H256 H256 27H256-30
Contextual Info: PRELIMINARY CY27H256 32K x 8 HighĆSpeed CMOS EPROM Functional Description Features D D D D D The CY27H256 is a highĆperformance, 256K CMOS EPROM organized in 32 Kbytes. It is available in industryĆstandard 28Ćpin, 600Ćmil DIP, 32Ćpin LCC and PLCC, and 28Ćpin TSOPĆI packages.

CY27H512

Contextual Info: fax id: 3020 ,.V.Ï.Ï.V.^ y nr' Æ CYPRESS CY27H512 P R E L IM IN A R Y 64K x 8 High-Speed CMOS EPROM Features 28-pin, 600-mil DIP, 32-pin LCC and PLCC, and 28-pin TSOP-I packages. These devices offer high-density storage combined with 40-MHz performance. The CY27H512 is avail­

Contextual Info: fax id: 3020 ¿¡¡P: CYPRESS CY27H512 PRELIMINARY 64K x 8 High-Speed CMOS EPROM Features 28-pin, 600-mil DIP, 32-pin LCC and PLCC, and 28-pin TSOP-I packages. These devices offer high-density storage combined with 40-MHz performance. The CY27H512 is avail­

H256

Abstract: CY27H256 H256-4 27H256-25
Contextual Info: fax id: 3014 CY27H256 — —— Æ r~'fV D D 17 Q Q jr I 1 IT COO 32K X 8 High-Speed CMOS EPROM Features 28-pin, 600-mil DIP, 32-pin LCC and PLCC, and 28-pin TSOP-I packages. These devices offer high-density storage com­ bined with 40-MHz performance. The CY27H256 is available

27H256-25

Abstract: CY27H256 H256-4 27H256-30 318Q H2564 OTICO
Contextual Info: fax id: 3014 —— — Æ j r r ~ 'f V D I 1 CY27H256 D 17 Q Q IT C O O 32K X 8 High-Speed CMOS EPROM Features 28-pin, 600-mil DIP, 32-pin LCC and PLCC, and 28-pin TSOP-I packages. These devices offer high-density storage com­ bined with 40-MHz performance. The CY27H256 is available

CY27C256A-45WMB

Abstract: w16 06 CY27C256A-45JC CY27C256A-45PC CY27C256A-45QMB CY27C256A-45WC CY27C256A-45ZC CY27C256A-55JC CY27C256A-70WC CY27C256A-90JC
Contextual Info: fax id: 3026 CY27C256A 1-Megabit 32K x 8 CMOS EPROM Features • • • • • • windowed packages (28-pin hermetic DIP and 32-pin LCC) which allow the device to be erased with UV light for 100% reprogrammability. Very fast read access time: (45−200 ns)

Delta W16

Abstract: 27C128 C128 CY27C128 27C128-45
Contextual Info: CY27C128 128K 16K x 8ĆBit CMOS EPROM CY27C128 automatically powers down into a lowĆpower standĆby mode. The CY27C128 is packaged in the industry standard 600Ćmil DIP and LCC packages. military) The CY27C128 is also available in a CerĆ D Low power DIP package equipped with an erasure

27C128

Abstract: 27C128-200 eprom 27C128 27C128 eprom transistor C128 27C1 C128 CY27C128 c1281
Contextual Info: fax id: 3011 1CY 27C1 28 CY27C128 128K 16K x 8-Bit CMOS EPROM Features CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the EPROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and byte-wide intelligent programming algorithms.

Contextual Info: CY27C256A 5 H S F J? p Y P P p c q J,. 1. I ,L,¿ k 3 k.^3 32K x 8 CMOS EPROM Features • • • • • • Very fast read access time: 4 5 -200 ns 5V ± 10% power supply Capable of withstanding >2001V ESD Latch-up protection up to 200 mA Two line control functions to prevent bus contention

C5121

Abstract: C5127 C512 CY27C512 CY27C512-45JC CY27C512-45PC CY27C512-45QMB CY27C512-45WC CY27C512-45WMB CY27C512-45ZC
Contextual Info: fax id: 3019 1CY 27C5 12 CY27C512 64K x 8 CMOS EPROM Features • • • • • • Very Fast Read Access Time: 45 - 200 ns 5V ± 10% Power Supply Capable of withstanding >2001V ESD Latch-up Protection up to 200mA Two line control functions to prevent bus contention

Contextual Info: CY27C128 '0 C Y PR ESS 128K 16K x 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns (commercial and military) • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected • ±10% Power supply tolerance

Contextual Info: fax id: 3026 1-Megabit 32K x 8 CMOS EPROM Features • • • • • • Very fast read access time: (45-200 ns) 5V ± 10% power supply Capable of withstanding >2001V ESD Latch-up protection up to 200 mA Two line control functions to prevent bus contention

stria

Abstract: 3011P 9027C
Contextual Info: fax id: 3011 CY27C128 p vp: v « *1 X X - 128K 16K x 8-Bit CMOS EPROM Features • W ide speed range — 45 ns to 200 ns (commercial and military) • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected

CY27C256

Contextual Info: fax id: 3013 p yXpX : v « *1 CY27C256 - 32K x 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) able in a CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light,

CY27C256

Abstract: 27C256-70 27C256 27C256-200 27C256-45 27C256 UV 27C256-150 27c256120
Contextual Info: fax id: 3013 1CY 27C2 56 CY27C256 32K x 8-Bit CMOS EPROM Features able in a CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the EPROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and

LC 7258

Contextual Info: fax id: 3026 CY27C256A 32Kx8 CMOS EPROM Featu res windowed packages 28-pin hermetic DIP and 32-pin LCC which allow the device to be erased with UV light for 100% reprogrammability. • Very fa s t read a cce ss tim e : (45-200 ns) • 5 V ± 1 0 % p o w e r s u p p ly