WB1 MARKING Search Results

MARKING WB1

Abstract: marking 18T Marking W3 18T MARKING WB1 MARKING MARKING W1 Marking ON TS93XXT3 MTVA
Contextual Info: l ~ ~ TSO3XX [] PLANER & TT3XXX PLANER ~ REF417 SCREENED dB VALUE BLACK ~ d B GREEN DOT ADD .5dB . TOP SIDE BOTTOM TSO3XXW1/WB1 GREEN DOT ADDS .5 dB SCREENED dB VALUE rl ~ (WHITE) U ~ TOP SIDE BOTTOM TSO3XXW3 ~ ~ r~~~ SCREENED dB VALUE (BLACK) bzJ O ~~-

Contextual Info: WB1 HEW LETT mLnM P A C K A R D 1 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-50311 Features • Internally Biased, Single 5 V Supply 17 mA • 19 dB Gain • 3.6 dB NF • Unconditionally Stable SOT-143 Surface Mount Package Description Pin Connections and

TS05XXW3

Abstract: TS0500 marking code wb1 TS05XX ts0506 TS0507 EMC TS-050
Contextual Info: ATTENUATORS THIN FILM CHIP ATTENUATORS GENERAL INFORMATION GENERAL SPECIFICATIONS: The TS03XX and TS05XX chip attenuators consist of a thin film Impedance: 50 Q element on an alumina ceramic substrate with solderable terminals Operating Temperature: -55°C to +150°C

ts0505

Abstract: marking code wb1 mw 772 TS05XXW1 TS05XXW3 ts0506 TS0503 TS05 TS0518 TS0509
Contextual Info: Attenuators Introduction Features • Substrate - Alumina • Power Rating - 0.1 to 2 Watts • Frequency Range DC to 18 GHz • Tape and Reel Packaging Available • VSWR under 1.50:1 • Variety of Chip Sizes • Attenuation Values from 1 to 20 dB in 1 dB increments; consult the factory

Contextual Info: THIN FILM CHIP ATTENUATORS GENERAL INFORMATION GENERAL SPECIFICATIONS: The TS03XX and TS05XX chip attenuators consist of a thin film element on an alumina ceramic substrate with solderable terminals in two sizes. The larger TS03XX Series operates to 12.4 GHz and the

ts0505

Abstract: ts0506 TS03XX
Contextual Info: ATTENUATORS gg THIN FILM CHIP ATTENUATORS GENERAL INFORMATION GENERAL SPECIFICATIONS: The TS03XX and TS05XX chip attenuators consist of a thin film element on an alumina ceramic substrate with solderable terminals in two sizes. The larger TS03XX Series operates to 12.4 GHz and the

tva0300n07

Abstract: mmic amplifier marking code N10 MTVA0300N05 PST-02-A-1 TVA0300N07W3 electronic passive components catalog SC-1016 MTVA0300 SMT2010TALN 42TVA
Contextual Info: EMC TECHNOLOGY Custom Engineered Solutions 8851 SW Old Kansas Ave. 772 286-9300 ISO 9001 & 14001 Certified M I C R OWAV E C O M P O N E N T S www.emct.com Resistive Products, Smart Loads , High Reliability Stuart, FL 34997 (800) 544-5594 Thermopads®, Equalizers,

Contextual Info: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045MR1 MRF9045MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

MRF9030NR1

Abstract: marking z17 100B470JP
Contextual Info: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030MR1 MRF9030MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

Contextual Info: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors

ts0505

Abstract: TS0503 TS0506 marking code wb1 TS0510 TS0504
Contextual Info: A ttenuators General Specifications Teclutologi/ TS05 M arking Code Part # dB Value TS0500 TS0501 TS0502 TS0503 TS0504 TS0505 TS0506 TS0507 TS0508 TS0509 TS0510 TS0511 TS0512 TS0513 TS0514 TS0515 TS0516 TS0517 TS0518 TS0519 TS0520 0 dB 1 dB 2 dB 3 dB 4 dB

MRF9060L

Contextual Info: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

Contextual Info: Freescale Semiconductor Technical Data MRF9045MR1 Rev. 9, 5/2006 Replaced by MRF9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MRF9045MR1

TO-270-2

Contextual Info: Freescale Semiconductor Technical Data MRF9030M Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

VIPer 32

Abstract: MARKING WB1 viper gate control circuits MRF9030M VIPER 300 series A113 MRF9030MBR1 MRF9030MR1 marking z17
Contextual Info: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors

Contextual Info: Document Number: MRF9045N Rev. 12, 9/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9045NBR1 • Typical Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 19 dB

MRF9045N

Abstract: A113 MRF9045MR1 MRF9045NBR1 MRF9045NR1 MARKING WB1 6020G
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045NR1 MRF9045NBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

93F2975

Abstract: marking 865 amplifier 100B120JP 865 marking amplifier
Contextual Info: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

0805 capacitor 10 pf

Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.

Contextual Info: Freescale Semiconductor Technical Data Rev. 10, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9085LR3 MRF9085LSR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

MRF9060MR1

Abstract: 93F2975
Contextual Info: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060MR1 MRF9060MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

MARKING WB1

Abstract: marking us capacitor pf l1 marking Z4 wb1 99 A113 MRF9045MBR1 MRF9045MR1
Contextual Info: Freescale Semiconductor Technical Data MRF9045MR1 Rev. 9, 5/2006 Replaced by MRF9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MRF9045MR1

MRF9030N

Abstract: wb1 99 MRF9030NBR1 A113 MRF9030NR1 marking wb2
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9030NR1 MRF9030NBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these