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    WB1 MARKING Search Results

    WB1 MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    WB1 MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING WB1

    Abstract: marking 18T Marking W3 18T MARKING WB1 MARKING MARKING W1 Marking ON TS93XXT3 MTVA
    Text: l ~ ~ TSO3XX [] PLANER & TT3XXX PLANER ~ REF417 SCREENED dB VALUE BLACK ~ d B GREEN DOT ADD .5dB . TOP SIDE BOTTOM TSO3XXW1/WB1 GREEN DOT ADDS .5 dB SCREENED dB VALUE rl ~ (WHITE) U ~ TOP SIDE BOTTOM TSO3XXW3 ~ ~ r~~~ SCREENED dB VALUE (BLACK) bzJ O ~~-


    Original     		PDF REF417 TS93XXT3 MARKING WB1 marking 18T Marking W3 18T MARKING WB1 MARKING MARKING W1 Marking ON TS93XXT3 MTVA

    ts0505

    Abstract: marking code wb1 mw 772 TS05XXW1 TS05XXW3 ts0506 TS0503 TS05 TS0518 TS0509
    Text: Attenuators Introduction Features • Substrate - Alumina • Power Rating - 0.1 to 2 Watts • Frequency Range DC to 18 GHz • Tape and Reel Packaging Available • VSWR under 1.50:1 • Variety of Chip Sizes • Attenuation Values from 1 to 20 dB in 1 dB increments; consult the factory


    Original     		PDF TS0500 TS0501 TS0502 TS0503 TS0504 TS0505 TS0506 TS0507 TS0508 TS0509 marking code wb1 mw 772 TS05XXW1 TS05XXW3 TS05 TS0518

    tva0300n07

    Abstract: mmic amplifier marking code N10 MTVA0300N05 PST-02-A-1 TVA0300N07W3 electronic passive components catalog SC-1016 MTVA0300 SMT2010TALN 42TVA
    Text: EMC TECHNOLOGY Custom Engineered Solutions 8851 SW Old Kansas Ave. 772 286-9300 ISO 9001 & 14001 Certified M I C R OWAV E C O M P O N E N T S www.emct.com Resistive Products, Smart Loads , High Reliability Stuart, FL 34997 (800) 544-5594 Thermopads®, Equalizers,


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045MR1 MRF9045MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9045MR1) MRF9045MR1 MRF9045MBR1 MRF9045MBR1)

    MRF9030NR1

    Abstract: marking z17 100B470JP
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030MR1 MRF9030MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9030MBR1) MRF9030NR1 MRF9030MR1 MRF9030MBR1 marking z17 100B470JP

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors


    Original     		PDF MRF9030NR1/NBR1. MRF9030M MRF9030MR1 MRF9030MBR1 MRF9030MR1

    MRF9060L

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9060LR1 MRF9060LSR1 MRF9060L

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9045MR1 Rev. 9, 5/2006 Replaced by MRF9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MRF9045MR1


    Original     		PDF MRF9045MR1 MRF9045NR1/NBR1. MRF9045MBR1 MRF9045MR1

    TO-270-2

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9030M Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9030M MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 TO-270-2

    MRF9045N

    Abstract: 945 TRANSISTOR AN1955 EB212 MRF9045MR1 MRF9045NR1 A113 6020G marking wb2 MRF9045
    Text: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9045N MRF9045NR1 MRF9045N 945 TRANSISTOR AN1955 EB212 MRF9045MR1 MRF9045NR1 A113 6020G marking wb2 MRF9045

    VIPer 32

    Abstract: MARKING WB1 viper gate control circuits MRF9030M VIPER 300 series A113 MRF9030MBR1 MRF9030MR1 marking z17
    Text: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors


    Original     		PDF MRF9030NR1/NBR1. MRF9030M MRF9030MR1 MRF9030MBR1 MRF9030MR1 VIPer 32 MARKING WB1 viper gate control circuits MRF9030M VIPER 300 series A113 MRF9030MBR1 marking z17

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF9045N Rev. 12, 9/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9045N MRF9045NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9045NBR1 • Typical Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 19 dB


    Original     		PDF MRF9045N MRF9045NBR1

    MRF9045N

    Abstract: A113 MRF9045MR1 MRF9045NBR1 MRF9045NR1 MARKING WB1 6020G
    Text: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045NR1 MRF9045NBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9045N MRF9045NR1 MRF9045NBR1 MRF9045NR1 MRF9045N A113 MRF9045MR1 MRF9045NBR1 MARKING WB1 6020G

    0805 capacitor 10 pf

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.


    Original     		PDF MRF9080LR3 MRF9080LSR3 0805 capacitor 10 pf

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 10, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9085LR3 MRF9085LSR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9085LR3 MRF9085LSR3

    MRF9060MR1

    Abstract: 93F2975
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060MR1 MRF9060MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9060MR1 MRF9060MBR1 93F2975

    MARKING WB1

    Abstract: marking us capacitor pf l1 marking Z4 wb1 99 A113 MRF9045MBR1 MRF9045MR1
    Text: Freescale Semiconductor Technical Data MRF9045MR1 Rev. 9, 5/2006 Replaced by MRF9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MRF9045MR1


    Original     		PDF MRF9045MR1 MRF9045NR1/NBR1. MRF9045MBR1 MRF9045MR1 MARKING WB1 marking us capacitor pf l1 marking Z4 wb1 99 A113 MRF9045MBR1

    MRF9030N

    Abstract: wb1 99 MRF9030NBR1 A113 MRF9030NR1 marking wb2
    Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9030NR1 MRF9030NBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9030N MRF9030NR1 MRF9030NBR1 MRF9030NR1 MRF9030N wb1 99 MRF9030NBR1 A113 marking wb2

    Untitled

    Abstract: No abstract text available
    Text: WB1 HEW LETT mLnM P A C K A R D 1 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-50311 Features • Internally Biased, Single 5 V Supply 17 mA • 19 dB Gain • 3.6 dB NF • Unconditionally Stable SOT-143 Surface Mount Package Description Pin Connections and


    OCR Scan     		PDF INA-50311 OT-143 INA-50311 self-aligb30 INA-30/50 INA-50311-TRI

    TS05XXW3

    Abstract: TS0500 marking code wb1 TS05XX ts0506 TS0507 EMC TS-050
    Text: ATTENUATORS THIN FILM CHIP ATTENUATORS GENERAL INFORMATION GENERAL SPECIFICATIONS: The TS03XX and TS05XX chip attenuators consist of a thin film Impedance: 50 Q element on an alumina ceramic substrate with solderable terminals Operating Temperature: -55°C to +150°C


    OCR Scan     		PDF TS03XX TS05XX TS0300 TS0500 TS03XX, TS03XXW3, TS05XX, TS0500WB1 TS05XXW3 marking code wb1 ts0506 TS0507 EMC TS-050

    Untitled

    Abstract: No abstract text available
    Text: THIN FILM CHIP ATTENUATORS GENERAL INFORMATION GENERAL SPECIFICATIONS: The TS03XX and TS05XX chip attenuators consist of a thin film element on an alumina ceramic substrate with solderable terminals in two sizes. The larger TS03XX Series operates to 12.4 GHz and the


    OCR Scan     		PDF TS03XX TS05XX TS0518 TS0519 TS0520 TS0510 TS0300 TS0500

    ts0505

    Abstract: ts0506 TS03XX
    Text: ATTENUATORS gg THIN FILM CHIP ATTENUATORS GENERAL INFORMATION GENERAL SPECIFICATIONS: The TS03XX and TS05XX chip attenuators consist of a thin film element on an alumina ceramic substrate with solderable terminals in two sizes. The larger TS03XX Series operates to 12.4 GHz and the


    OCR Scan     		PDF TS03XX TS05XX TS0300 TS0500 TS03XX, TS03XXW3, TS05XX, TS05XXW1, ts0505 ts0506

    ts0505

    Abstract: TS0503 TS0506 marking code wb1 TS0510 TS0504
    Text: A ttenuators General Specifications Teclutologi/ TS05 M arking Code Part # dB Value TS0500 TS0501 TS0502 TS0503 TS0504 TS0505 TS0506 TS0507 TS0508 TS0509 TS0510 TS0511 TS0512 TS0513 TS0514 TS0515 TS0516 TS0517 TS0518 TS0519 TS0520 0 dB 1 dB 2 dB 3 dB 4 dB


    OCR Scan     		PDF TS0500 TS0501 TS0502 TS0503 TS0504 TS0505 TS0506 TS0507 TS0508 TS0509 marking code wb1 TS0510