WIDTHS300 Search Results

irf9540

Abstract: l 9143 irfp9140 IRFP9143 IRF9540 mosfet IRF9541 9142 ha 9141 9143 15a 50v p-channel mosfet
Contextual Info: SAMSUNG ELSTC^ONTCS IN C h4 E D WÊ 7 T b m M 2 IK I-y ö 4 Ü /»ö4 1 /y ö 4 2 /9 5 4 3 IRFP9140/914179142/9143 FEATURES • • • • • • • □□122bG GG E • SI1GK P-CHANNEL POWER MOSFETS TO-220 Lower Rds ON Improved inductive ruggedness Fast switching times

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2N3904U

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3904U EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEjj=50nA Max. , IBL=50nA(Max.) @Vce=30V, Veb=3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage

Contextual Info: sb TOSHIBA -CDISCRETE/OPTO> 9097250 TOSHIBA ï>F| ^ a ^ s a 0D 077t,a t T-33-35 56C 07768 <DISCRETE/OPTO SILICON NPN TRIPLE DIFFUSED M ESA TYPE _ DARLINGTON POWER)_ 2SD698 INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATION.

KTA1666

Abstract: KTC4379 OB2 SOT-89
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC4379 EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • Low Saturation Voltage. : VcE sat =0.5V(Max.) (IC=1A) • High Speed Switching Time: tstg=1.0j/S(Typ.) • PC=1~2W (Mounted on Ceramic Substrate)

Contextual Info: fT P e FORWARD INTERNATIONAL ELECTRONICS LTD. BC807S SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR *Conpfement to BC817S ABSOLUTE MAXIMUM RATINGS at Tjwdrt5*C Characteristic Symbol Rating Unit Collector-Base Voltage

KTA1666

Abstract: KTC4379 high speed amplfier
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC4379 EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • Low Saturation Voltage. : VcE sat =0.5V (Max.) (Ic=lA) • High Speed Switching Time: tstg=1.0//S(Typ.)

sot-89, amplifier, H1

Abstract: H1 SOT-89 amplifier A1666 KTA1666 KTC4379
Contextual Info: K E C SEMICONDUCTOR KTA1666 TECHNICAL DATA e p it a x ia l p l a n a r p n p ti POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES • Low Saturation Voltage : VcE sat =- 0.5V(Max.) (Ic=-1A) • High Speed Switching Time : tstg=1.0//S(Typ.)

MPSA44

Abstract: MPSA94
Contextual Info: SEMICONDUCTOR TECHNICAL DATA MPSA94 EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES • High Breakdown Voltage. • Complementary to MPSA44. ABSOLUTE MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage

2N3905

Abstract: 2N3906 transistor 2N3905
Contextual Info: SAMSU NG SEMICON DU CTO R .INC 2N3905 14E 0 7 ^ 4 1 4 2 OOQTlba b | PNP EPITAXIAL SILICOJN TRANSISTOR T-29-21 GENERAL PURPOSE TRANSISTOR • C o lle cto r-E m ltte r Voltage: Vcco=40V • C o lle cto r D issipation : P c (max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

2n5551 samsung

Abstract: transistor 2n5550 2N5550 2N5551
Contextual Info: SAMSUNG S E MI CON DU C T DR INC 2N5550 14E D | 7^4142 0007],fi? NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V ceo=140V • Collector Dissipation: P c m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic

2SD698

Abstract: OPTO 701 1C00 251C DD077
Contextual Info: TOSHIBA "st ÍDISCRETE/OPTO> DË'l'iciTPasa o o D 7 7 ba b "I“ / j / 9097250 TOSHIBA <D I S C R E T E / O P T O S IL IC O N NPN T R IP L E D IF F U SE D M E S A T YPE D A R L IN G T O N POWER)_ INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATION.

mpsa44v

Abstract: MPSA44 bi 370 transistor MPSA45 bi 370 transistor e
Contextual Info: SEMICONDUCTOR TECHNICAL DATA MPSA44/45 EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES • High Breakdown Voltage. • Collector Power Dissipation : Pc=625mW. ABSOLUTE MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL Collector-Base Voltage