WIFI 2W POWER AMPLIFIER Search Results

D1 diode

Abstract: diode 400V 1A SOD-123 GRM39Y5V104Z25V RO4003 TC3541 cap 1210 Murata WiFi
Contextual Info: TC3541 REV0_20060921 5.2 – 5.9 GHz 2W Single Bias MMIC FEATURES PHOTO ENLARGEMENT ! P-1 dB: 33 dBm ! Small Signal Gain: 20 dB ! Power Added Efficiency: 25 % ! IP3: 42 dBm ! Input/Output 50 Ω Match ! Bias condition: 1000 mA @ 9 V DESCRIPTION The TC3541 is a 2-stage PHEMT Single Bias MMIC power amplifier. It is designed for use in low cost and high

AU1250

Abstract: wifi 5w amplifier 6pin tft lcd inverter board pin connection lvds wire DB9 RS232 stereo JAck 2.5mm 24 pin connection lvds wire DB9 jack 12V2A wifi sensor 5 wire lcd inverter
Contextual Info: DG1250-SBC-ver2.0 多媒体单板计算机 广州市联智电子科技有限公司 GuangZhou DeviceGate Technology Co.,Ltd www.devicegate.com 地址：广州市天河区中山大道中77号时尚名苑1栋501.512室 电邮：Service@devicegate.com Feng@devicegate.com

SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR AMP

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

RF5632

Abstract: PNP-1090-P22 UMX-254-D16-G UMX-333-D16-G RF1194 UMX-406-D16 SPF-5043Z UMX-519-D16-G SHF-0289 spf-5122z
Contextual Info: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product

pnp-1500-p22

Abstract: UMZ-1147-R16-G RF5632 UMX-254-D16-G SPA-1002-27H UMX-119-D16-G spf-5189z ums-2000-A16-g spf-5122 UMX-406-D16
Contextual Info: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

Contextual Info: AH314 2.3-2.9 GHz 2W 5V Linear Driver Amplifier Applications • • WCDMA / WiMAX / WiBro / WiFi / LTE Wireless infrastructure 24-pin 5x5mm leadless QFN SMT package Product Features • • • • • • • • Functional Block Diagram 2.3 – 2.9 GHz

wifi 2.4 ghz pcb layout

Abstract: 06035J1R3ABTTR AH314 AH314-PCB AH315 AH323 wifi 2W Power Amplifier A0827
Contextual Info: AH314 2.3-2.9 GHz 2W 5V Linear Driver Amplifier Applications • • WCDMA / WiMAX / WiBro / WiFi / LTE Wireless infrastructure 24-pin 5x5mm leadless QFN SMT package Product Features • • • • • • • • Functional Block Diagram 2.3 – 2.9 GHz

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR AMP

Abstract: SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR SZM-2066Z vpc3 s 2.4 ghz transistor wifi amplifier wifi 2.4 ghz wifi 2.4 ghz pcb layout SZM-2066 vpc3 c wifi 2.4ghz DETECTOR CIRCUIT DIAGRAM
Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

2.4 ghz transistor wifi amplifier

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

SzM2166

Abstract: SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR AMP SZM - 238
Contextual Info: Advanced Information Product Description Sirenza Microdevices’ SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR

Abstract: SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR AMP SZM-2166 wifi 2.4 ghz pcb layout transistor 2.4GHz amplifier schematic wifi 2.4 ghz transistor wifi amplifier szm2166 2.4GHz Power Amplifier module wifi 2.4 ghz SZM-2166Z
Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs

dm9161aep board

Contextual Info: FES90xxx_080 Display Embedded System Features • 400MHz 32 bit RISC architecture ARM926EJ core. • Support DDR2 64MB/128MB system memory. • OS WinCE 6.0 / Linux 2.6.x in 2Gbit NAND Flash. • Interface TTL/LVDS for either 18/24 bit LCD panel. • Built-in Vgh,Vgl,Vcom and LED backlight Driver.

dm9161aep board

Abstract: vgh vgl vcom
Contextual Info: FES90xxx_070 Display Embedded System Features • 400MHz 32 bit RISC architecture ARM926EJ core. • Support DDR2 64MB/128MB system memory. • OS WinCE 6.0 / Linux 2.6.x in 2Gbit NAND Flash. • Interface TTL/LVDS for either 18/24 bit LCD panel. • Built-in Vgh,Vgl,Vcom and LED backlight Driver.

vpc3 c

Abstract: TRANSISTOR MARKING CODE R2A SZM-2066Z
Contextual Info: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip

Contextual Info: SZM-2166Z SZM-2166Z 2.3GHz to 2.7GHz 2W Power Amplifier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT

dk39

Abstract: SZM-2166 szm2166 SZM2166ZSR 600S100JW250 12NXJBB 600S100 42 dbm 2.4GHz amplifier schematic
Contextual Info: SZM-2166Z SZM-2166Z 2.3GHz to 2.7GHz 2W Power Amplifier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT

Contextual Info: RFPA5026 RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: DFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features        RFPA5026 P1dB=33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,

Contextual Info: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features        RFPA5026 P1dB=33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,

600S100JW250

Abstract: cap 10pF 50V 10 0603 X7R 600S2R0JW250 MCH18
Contextual Info: RFPA2226 RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features     P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance POUT =26dBm at 2.5% EVM, VCC 5V POUT =27dBm at 2.5% EVM, VCC 6V

Contextual Info: RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA2226 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features     P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance POUT =26dBm at 2.5% EVM, VCC 5V POUT =27dBm at 2.5% EVM,

Contextual Info: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor

Contextual Info: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features RFPA5026  P1dB =33dBm at 5V  802.11g 54Mb/s Class AB Performance  POUT =25dBm at 2.5% EVM,