WLGL Search Results

44c256

Abstract: 3034C
Contextual Info: SMJ44C256 262144 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY _ SGMS034C - MAY 1989 - B E V ILO JUNE 1965 Organization. . . 262144 Words x 4 Bits Single 5-V Supply 10% Tolerance Processed to MIL-STD-833, Class B Performance Ranges: 3-State Unlatched Output

TMS44C256

Abstract: TMS44C256-10 TMS44C256-80 44C256
Contextual Info: TMS44C256 262 144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY ‘jM G S l'M C D Q1 I u 1 DQ4 W ; 3 18 ' D Q 3 V SS DQ2 I 7 RAS ! 9 R E AD 13 j A 6 12 j A5 TIM E T IM E TIM E OR ta R ta (C ) 'a (C A ) W R IT E A3 [ 9 (tC A A ) CYCLE (M A X ) (M A X ) (M IN)

QML-38535

Abstract: stc 1740 RAS 0510 SMD AH STC 5005 SMJ44C256-12JDM SMJ44C256-15JDM MT4C4256C 5962-9061708 SMJ44C256-80JDM
Contextual Info: REVISIONS LTR DESCRIPTION DATE yr-mo-da APPROVED A_ Changes in accordance with NOR 5962-R049-93._ 92-12-09_M. A. Frye_ B Updated boilerplate. Added device types 06-10. - gig 98-10-02 Raymond Monnin THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED.

V53C464

Abstract: cason KDS 4J
Contextual Info: ijr‘ VITELIC V53C464A FAMILY HIGH PERFORMANCE, LOW POWER 64K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE V53C464A Max. RAS Access Time, tRAC 60/60L 70/70L 80/80L 10/10L 60 ns 70 ns 80 ns 100 ns Max. Column Address Access Time, (tCAA) 30 ns

MCM401OOAS70

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM40100 1M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The MCM40100 is a 40M dynamic random access memory DRAM modules organized as 1,048,576 x 40 bits. The module is a 72-lead single -in-line

Contextual Info: b 'ìE T> I L,3b7251 ODÖTS'ifl flbl « M 0 T 3 MOTOROLA l ^ ' ’R 0 L A SC Order this document by MCM516160A/D Î1EM0RY/ASIC SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information 16M CMOS Wide DRAM Family F a s t P a g e M o d e , x 1 6 a n d x 1 8

Contextual Info: IV I K J I U n U L M SEMICONDUCTOR TECHNICAL DATA MCM40100 MCM40L100 1M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The M C M 40100 and M C M 40L100 are 40M dynam ic random access m em ory DRAM m odules organized as 1,048,576 x 40 bits. The m odule is a 72-lead single­

MCM54400A-C

Abstract: mcm54400az M5440 M54400
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A-C Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode Operating Temperature - 40°C to + 85°C The MCM54400A is a 0.7p CM OS high-speed, dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS silicon-gate pro­

bd 3806 fs

Abstract: TDA 3806 Y21T 38063M
Contextual Info: MITSUBISHI MICROCOMPUTERS 3806 Group S IN G L E -C H IP 8 -B IT C M O S M IC R O C O M P U T E R DESCRIPTION •C lo c k generating c ir c u it . Internal feedback resistor T he 3806 group is 8 -b it m icro co m p u te r based on the 740 fa m ily

54260

Abstract: 5L426 4260B/BSL-70
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54260B MCM5L4260B MCM5S4260B Advance Information 256K x 16 CMOS Dynamic RAM Fast Page Mode - 2 CAS, 1 Write Enable The MCM54260B is a 0.6n CMOS high-speed dynamic random access memory. It is organized as 262,144 sixteen-bit words and fabricated with CMOS siiicon-gate

WLH12-TH

Abstract: WL-2H1100 Omron WL-9H100 WL-2A129
Contextual Info: Two-circuit Limit Switch/Long-life Two-circuit Limit Switch WL/WLM CSM_WL_WLM_DS_E_13_1 Wide Range of Two-circuit Switches; Select One for the Operating Environment/Application • A wide selection of models are available, including the overtravel models with greater OT, indicator-equipped

Contextual Info: Order th is data sheet by MCM514400/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information 1M x 4 CMOS Dynamic RAM Page Mode J PACKAGE PLA STIC SM A LL OUTLIN E C A SE 822A The MCM514400 is a 0.8p CMOS high-speed, dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS silicon-gate process

WLH2-55LDK43

Abstract: WLCA12-2NLD WL01GCA2 WLGCA2-139LD3 WLCA32-43LD WLG2-LD-DGJ03 WL01 WLG2-140LD3 WLNJ WL01CA12
Contextual Info: Two-circuit Limit Switch/Long-life Two-circuit Limit Switch WL/WLM CSM_WL_WLM_DS_E_12_1 Wide Range of Two-circuit Switches; Select One for the Operating Environment/Application • A wide selection of models are available, including the overtravel models with greater OT, indicator-equipped

2771

Abstract: amplificateur BF 2X40 amplificateur hf kIv 35 KIV 68 filament bulb 25/85/diode KIV 62
Contextual Info: PHILIPS ÛBL 5/3500 TETRODE for use as H,F. amplifier, modulator or frequen­ cy multiplier TETRODE pour utilisation en amplificatrice H.F., modulatrice ou multiplicatrice de fréquence TETRODE zur Verwendung als HF-Verstärker, Modulator oder Frequenzvervielfacher

6H210

Abstract: MARKING WL WLCA12-TS WLCA2 WLCA2-7TS WLD2-TS WLGCA2-2-TS W-10FB3 WLCA2-2-TS WL-1A200
Contextual Info: WL WL Robust General-Purpose Limit Switch WL Wide Selection of Two-Circuit Double-Break Limit Switches • Rugged diecast housing ■ High mechanical strength ■ Oiltight, waterproof, dustproof construction ■ Overtravel and high-precision types available

W-10FB3-55

Abstract: 7H100 Omron WL-9H100 WL-1A100 1A100 WLCA12-TS omron limit switch nema a600 WL-3H1100-1 WL-1A200 WLCA32-41TS
Contextual Info: Robust General-Purpose Limit Switch WL Wide Selection of Two-Circuit Double-Break Limit Switches • Rugged diecast housing ■ High mechanical strength ■ Oiltight, waterproof, dustproof construction ■ Overtravel and high-precision types available ■ Choose switches with neon lamp or

Contextual Info: me GEC P L E S S E Y MARCH 1992 SEMICONDUCTORS PRELIMINARY INFORMATION DS3234 11 P10C68 INDUSTRIAL GRADE CMOS/SNOS nvSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM The P10C68 is a fast static RAM 35 and 45 ns with a non-volatile electrically-erasable PROM (EEPROM) cell

440-256

Abstract: 44C256-10
Contextual Info: SMJ44C256 262144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS034C - MAY 1989 - REVISED JUNE 1995 Organization. . . 262144 Words x 4 Bits Single 5-V Supply 10% Tolerance Processed to MIL-STD-833, Class B Performance Ranges: 3-State Unlatched Output Low Power Dissipation

WLCA2

Abstract: torque for M6 brass bolt OMRON LIMIT SWITCH WLCA12 Type 3-4 13 NJ2 11 N
Contextual Info: Two-circuit Limit Switch/Long-life Two-circuit Limit Switch WL/WLM CSM_WL_WLM_DS_E_6_1 Wide Range of Two-circuit Switches; Select One for the Operating Environment/Application • A wide selection of models are available, including the overtravel models with greater OT, indicator-equipped

sp8560

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information 16M CMOS Wide DRAM Family Fast Page Mode, x16 The family of 16M Dynamic RAMs is fabricated using 0.55^ CMOS high-speed sili­ con—gate process technology. It includes devices organized as 1,048,576 sixteen-bit

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 36 Bit ECC Dynamic Random Access Memory Module MCM36104 for Error Correction Applications The MCM36104 is a 36M dynamic random access memory DRAM module organized as 1,048,576 x 36 bits. The module is a 72-lead s in gle -in-line

5L4800A

Abstract: 54600A cm54800
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 512K x 8 CMOS Dynamic RAM Page Mode MCM54800A MCM5L4800A MCM5V4800A The M C M 54 8 0 0A is a 0 .7 ji C M O S h ig h -s p e e d , d yn a m ic random a ccess m em ory. It is o rga n ized as 5 24,288 e ig h t-b it w ord s and fa b rica te d w ith C M O S s ilic o n -g a te

414256

Abstract: 414256 dram
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM414256 MCM41L4256 256K x 4 CMOS Dynamic RAM Page Mode The M C M 414256 is a 1 .On CM OS high-speed, dynam ic random access memory. It is organized as 262,144 four-bit w ords and fabricated with C M OS siiicon-gate process technology. Advanced circuit design and fine line processing provide high

ICS RS 3197

Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA MCM54280B MCM5L4280B MCM5V4280B Product Preview 256K x 18 CMOS Dynamic RAM Fast Page Mode - 2 CAS, 1 Write Enable T h e M C M 5 4 2 8 0 B is a 0 .6 j C M O S h ig h -s p e e d d y n a m ic ra n d o m a c c e s s m e m o ry .