WSFM04550000F Search Results
WSFM04550000F Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SFM Vishay Electro-Films CHIP RESISTORS Thin Film Top-Contact Resistor FEATURES • Wire bondable • Small size: 0.020 inches square Product may not be to scale • Resistance range: 1.0 Ω to 1 MΩ • DC power rating: 250 mW • Oxidized silicon substrate for good power dissipation |
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11-Mar-11 | |
Contextual Info: SFM www.vishay.com Vishay Electro-Films Thin Film Top-Contact Resistor FEATURES • Wire bondable • Small size: 0.020 inches square • Case: 0202 • Resistance range: 1.0 to 1 M • DC power rating: 250 mW Product may not be to scale • Oxidized silicon substrate for good power dissipation |
Original |
MIL-STD-883electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
tantalum nitrideContextual Info: SFM Vishay Electro-Films CHIP RESISTORS Thin Film Top-Contact Resistor FEATURES • Wire bondable • Small size: 0.020 inches square Product may not be to scale • Resistance range: 1.0 Ω to 1 MΩ • DC power rating: 250 mW • Oxidized silicon substrate for good power dissipation |
Original |
18-Jul-08 tantalum nitride | |
WSFM04550000F
Abstract: SFM50
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Original |
2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 WSFM04550000F SFM50 | |
Contextual Info: SFM www.vishay.com Vishay Electro-Films Thin Film Top-Contact Resistor FEATURES • Wire bondable • Small size: 0.020 inches square • Case: 0202 • Resistance range: 1.0 to 1 M • DC power rating: 250 mW Product may not be to scale • Oxidized silicon substrate for good power dissipation |
Original |
2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
WSFM04550000FContextual Info: SFM www.vishay.com Vishay Electro-Films Thin Film Top-Contact Resistor FEATURES • Wire bondable • Small size: 0.020 inches square • Case: 0202 • Resistance range: 1.0 to 1 M • DC power rating: 250 mW Product may not be to scale • Oxidized silicon substrate for good power dissipation |
Original |
11-Mar-11 WSFM04550000F |