WT2300 Search Results

WT2300 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
WT2300		Weitron	Surface Mount N-Channel Enhancement Mode MOSFET	Original	PDF	146.06KB	6
WT-2300		Weitron	Surface Mount N-Channel Enhancement Mode MOSFET	Original	PDF	146.05KB	6

WT2300 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: WT-2300 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT 3.8 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE 20 VOLTAGE *Super high dense cell design for low RDS(ON) R DS(ON) <40 mΩ @VGS =4.5V R DS(ON) <60 mΩ @VGS =2.5V	Original	WT-2300 OT-23 OT-23	PDF
MOSFET N-Channel 1a vgs 0.9 sot-23 Abstract: WT2300 WT-2300 diode ja Contextual Info: WT-2300 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT 3.8 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE 20 VOLTAGE *Super high dense cell design for low RDS ON R DS(ON) <40 mΩ @VGS =4.5V R DS(ON) <60 mΩ @VGS =2.5V R DS(ON) <75 mΩ @VGS =1.8V	Original	WT-2300 OT-23 OT-23 MOSFET N-Channel 1a vgs 0.9 sot-23 WT2300 WT-2300 diode ja	PDF
Contextual Info: WT-2300 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT 3.8AMPERS 1 Features: DRAIN SOUCE VOLTAGE 20 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <40 mΩ @VGS =4.5V R DS(ON) <60 mΩ @VGS =2.5V	Original	WT-2300 OT-23 OT-23	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: WT-2300 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT 3.8 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE 20 VOLTAGE *Super high dense cell design for low RDS(ON) R DS(ON) <40 mΩ @VGS =4.5V R DS(ON) <60 mΩ @VGS =2.5V

Original

WT-2300 OT-23 OT-23

PDF

MOSFET N-Channel 1a vgs 0.9 sot-23

Abstract: WT2300 WT-2300 diode ja
Contextual Info: WT-2300 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT 3.8 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE 20 VOLTAGE *Super high dense cell design for low RDS ON R DS(ON) <40 mΩ @VGS =4.5V R DS(ON) <60 mΩ @VGS =2.5V R DS(ON) <75 mΩ @VGS =1.8V

Original

WT-2300 OT-23 OT-23 MOSFET N-Channel 1a vgs 0.9 sot-23 WT2300 WT-2300 diode ja

PDF

Contextual Info: WT-2300 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT 3.8AMPERS 1 Features: DRAIN SOUCE VOLTAGE 20 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <40 mΩ @VGS =4.5V R DS(ON) <60 mΩ @VGS =2.5V

Original

WT-2300 OT-23 OT-23

PDF