WT3402 Search Results

WT3402 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
WT3402		Weitron	Surface Mount N-Channel Enhancement Mode MOSFET		Original	PDF
WT-3402		Weitron	Surface Mount N-Channel Enhancement Mode MOSFET		Original	PDF

WT3402 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: WT-3402 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free 4.6 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE Super high dense cell design for low RDS(ON) R DS(ON) <30 mΩ @VGS =10V R DS(ON) <42 m Ω@VGS =4.5V Rugged and Reliable	Original	WT-3402 OT-23 OT-23	PDF
Contextual Info: WT-3402 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT 4.6 AMPERS 1 Features: DRAIN SOUCE VOLTAGE 30 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <30 mΩ @VGS =10V R DS(ON) <42 m Ω@VGS =4.5V	Original	WT-3402 OT-23 OT-23	PDF
WT3402 Abstract: WT-3402 Contextual Info: WT-3402 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT 4.6 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE Super high dense cell design for low RDS ON R DS(ON) <30 mΩ @VGS =10V R DS(ON) <42 m Ω@VGS =4.5V Rugged and Reliable *SOT-23 Package	Original	WT-3402 OT-23 OT-23 WT3402 WT-3402	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: WT-3402 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free 4.6 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low RDS(ON) R DS(ON) <30 mΩ @VGS =10V R DS(ON) <42 m Ω@VGS =4.5V *Rugged and Reliable

Original

WT-3402 OT-23 OT-23

PDF

Contextual Info: WT-3402 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT 4.6 AMPERS 1 Features: DRAIN SOUCE VOLTAGE 30 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <30 mΩ @VGS =10V R DS(ON) <42 m Ω@VGS =4.5V

Original

WT-3402 OT-23 OT-23

PDF

WT3402

Abstract: WT-3402
Contextual Info: WT-3402 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT 4.6 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low RDS ON R DS(ON) <30 mΩ @VGS =10V R DS(ON) <42 m Ω@VGS =4.5V *Rugged and Reliable *SOT-23 Package

Original

WT-3402 OT-23 OT-23 WT3402 WT-3402

PDF