X 13001 Search Results

footprint 8M1-A

Contextual Info: Zero Insertion Force PGA Test and Burn-in Sockets cont. Grid Size No. of Pins Dim. “C” 12 x 12* 144 1.100 [27.94] 13 x 13 169 1.200 [30.48] 14 x 14* 196 1.300 [33.02] 15 x 15 225 1.400 [35.56] 16 x 16* 256 1.500 [38.10] 17 x 17 289 1.600 [40.64] 18 x 18*

A44E

Abstract: C22F C55F cs5f C202F C14F C11F C12F C201F C203F
Contextual Info: TECHNICA L IN FO R M A TIO N Tempera^ uiire Coefficients Type Capacitance pF C54E C77E 33000 - 50000 50000 - 10OOCO Capacitor Tolerance ± c 500 V O LT W O R K IN G 5-2-I-0.5 5-2-1-0.5 I X b X d max mm a mm 31.7 X 25.4 X 10.2 4 4 .2 x 3 2 .8 x 8 .5 25.4

solder wire HMP

Abstract: C062400 C17AH101k
Contextual Info: Multilayer Capacitor Part Number Identification: C 17 AH 100 J 4 U X L T Product C = Multilayer Tolerance Material AH=P90, CF=NPO UL=ULTRA LOW ESR BL=DC BLOCKING Case Size Capacitance 06 = .060” x .030” 08 = .080” x .050” 11 = .055” x .055” 17 = .110” x .110”

Contextual Info: ±1% Tolerance 0402 to 1206 Chip Resistors O rd er N u m b er S ystem 61 - Specifications - 3 - XXX Type 61 = miniReel 41 = miniBag Size Code 2 = 0402 3 = 0603 5 = 0805 6= 1206 |w | • I Code <fl See Chart Dimensions L x W): Size Inch mm l x W L x W 0402 .04" x .02” 1.0 x 0.5

Contextual Info: White High-Intensity LED Lamp 5 mm, 50° Viewing Angle OVLEW5CB6 x x x x Wide beam angle High luminous intensity Blue LED + yellow phosphor ESD protected (±1kV, 1 time, [200pF 0 ]) Product Photo Here The OVLEW5CB6 is a round 5 mm white high-intensity lamp with a 50° viewing angle and stand-offs. It is

Contextual Info: White High-Intensity LED Lamp 5 mm, 50° Viewing Angle OVLEW5CB6 x x x x Wide beam angle High luminous intensity Blue LED + yellow phosphor ESD protected (±1kV, 1 time, [200pF 0 ]) Product Photo Here The OVLEW5CB6 is a round 5 mm white high-intensity lamp with a 50° viewing angle and stand-offs. It is

Contextual Info: E= N0. (NO. f= ( n o . (NO. G=(NO. (NO. OF OF OF OF OF OF POSITION POSITION POSITION POSITION POSITION POSITION PER PER PER PER PER PER REV. — i 2 ROW x1.27 R0W)x.050 R 0 W -1 ) x 1.27 R 0W -1)x.050 R 0 W -2 )x1 .27 ROW—Z)x,050 DESCRIPTION RELEASE DRAW MODIFY

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

5A/1/connector saver

Abstract: 86107A
Contextual Info: Infiniium DCA-X 86100D Wide-Bandwidth Oscilloscope Mainframe and Modules Data Sheet Table of contents Overview of the Infiniium 86100D DCA-X.2 General and mainframe.3

Contextual Info: Infiniium DCA-X 86100D Wide-Bandwidth Oscilloscope Mainframe and Modules Data Sheet Table of Contents Overview of the Infiniium 86100D DCA-X .2 Specifications .3 General and Mainframe .3

Contextual Info: Infiniium DCA-X 86100D Wide-Bandwidth Oscilloscope Mainframe and Modules Data Sheet Table of Contents Overview of the Infiniium 86100D DCA-X .2 Specifications .3 General and Mainframe .3

Contextual Info: m ' i PRELIMINARY MT4C16256/7/8/9 L 256K X 16 WIDE DRAM MICRON I SEMICONDUCTOR MC WIDE DRAM 256K x 16 DRAM LOW POWER, EXTENDED REFRESH FEATURES • In d u stry -stan d ard x l6 pinouts, tim ing, functions a n d packages • H igh-perform ance CMOS silicon-gate process

MT4C16270DJ-7

Contextual Info: MICPON SFM JCONDUCTOR INC L.1E D • b 11 IS 4 e} DDDTìSB 2ST MflRN M IC R O N I MT4C16270 256K X 16 DRAM SEUiCOhOkJCTOH, INC. DRAM 256K x 16 DRAM EDO PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process

Delay linear sweep generator using 555 timer

Contextual Info: Agilent X-Series Signal Analyzer This help file provides documentation for the following X-Series Analyzers: PXA Signal Analyzer N9030A MXA Signal Analyzer N9020A EXA Signal Analyzer N9010A CXA Signal Analyzer N9000A MXE EMI Receiver N9038A Spectrum Analyzer Mode

MT4C16257

Abstract: MT4C16256DJ-7 MT4C1625
Contextual Info: ADVANCE M T4C 16256/7/8/9 L 256K X 16 DRAM M IC R O N DRAM 256K x 16 DRAM g LOW POWER, EXTENDED REFRESH < FEATURES • Industry standard xl6 pinouts, tim ing, functions and packages • High-perform ance, CMOS silicon-gate process • Single +5V ±10% pow er supply

Contextual Info: 12R2 10U, Front Loaded FEATURES • VME, VME64x, VXS, VPX, cPCI or MicroTCA compatible ■ 19" rackmount per IEC60297 slide mounting optional ■ 10U H, standard depth 22" ■ 2-20 slot, IEEE 1101.10/.11 compliant card cages, front load ■ Mounting for 2 x 5.25" HH and 1 x 3.5"devices

MT4C16256DJ-7

Contextual Info: lU IIÖ Q ö lX I I techno lo g y. iN t MT4CÎ6256/7* 256K X 16 DRAM DRAM 256Kx 16DRAM FAST PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply*

2N1029

Abstract: 2N2211 MP2145 mp2143 2SB237 2n1030 2N115 MP2143A MP2144 MP2144A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

R02AM

Abstract: C4311
Contextual Info: POUEREX INC ~~TI DE~| TETMbEl 00017Ö3 7 f T ' 2.JT ' z.o Phase Control Thyristors SCRs I tiav) m To =65° C 50% Duty Cycle, Half Sine (Amps) Idrm/Irrm for @ Rated Fusing Vdrm/Vrrm @ 8.3 ms Vdrm /V rrm and Tj(M ax) / A2 sec\ Range (mA) [ x I0 y (Volts) (Amps x 103)

Contextual Info: '993 Tí* PRELIMINARY MT4C16256/7/8/9 256K X 16 WIDE DRAM MICRON I SCHICONDUCTOR MC WIDE DRAM 256K X 16 DRAM FAST-PAGE-MODE FEATURES OPTIONS PIN ASSIGNMENT Top View 40-Pin SOJ (DC-6) Vcc [ 1 DOl [ 2 D02 E 3 D03 E 4 004 [ 5 • Write Cycle Access _ BYTE or WORD via WE

TRANSISTOR PNP B1443

Abstract: B1565 transistor B1274 transistor 13001 s 6d B1273 transistor B0615 DIODE Transistor B1203 transistor b1274 transistor b1134 transistor B1204
Contextual Info: Version 1.7 Produced in June 1998 Sharp Programmable Controller New Satellite JW20H Programming Manual * Ladder instruction version 04000 F — 44 O I F — 08 1 O C T 100 09000 0000 09000 F — 00 X F E R □ F — 05 D M P X F — 63 IN C 09000 09000 09000

a44e

Abstract: C101E A12E A15E C77E A33E A22E C202E C204E C22E
Contextual Info: I 'E' Finish Resin E ncapsulated I T em perature R ange — 55°C to + 100°C Type Capacitance pF Capacitor Tolerance ±% Il X b X d (max) mm a mm 50 VO LT W O R K IN G C5E C6E C12E A 12E C14E A 15E A 25E C101E C201E C202E C203E C204E A 33E C33E C35E 271

Contextual Info: M ICRON SEM ICONDUCTOR INC b 'iE D m b i l l 5 HT G D G cì cì f i 3 B i MRN MT4C16256/7 L 256K X 16 DRAM MICRON I TTh SEPiCO ND'J CIO FiU JC. 256K x 16 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard xl6 pinouts, timing, functions and packages

Contextual Info: MICRON SEMICOND UCT OR INC bTE D • b l l l S M 11! DDÜTTbö 7ÖT ■ MRN M ir D H M 1 semiconductor inc. MT4C16256/7 256K X 16 DRAM 2 5 6 K X 16 DRAM DRAM FAST PAGE MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process