X28C0101 Search Results

X28C010D-15

Abstract: FN8105 GDIP1-T32 x28c010dmb-20 X28C010 X28C010D-12 X28C010DI X28C010DI-12 X28HT010 F326
Contextual Info: X28C010, X28HT010 Data Sheet February 12, 2007 5V, Byte Alterable EEPROM Features The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the

X28C010

Abstract: 37KW X28C010-20 X28C010-25 X28C010I X28C010M
Contextual Info: X28C010 1M 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 120ns • Simple Byte and Page Write —Single 5V Supply —No External High Voltages or VPP Control Circuits —Self-Timed • No Erase Before Write • No Complex Programming Algorithms

Contextual Info: XIC GR INC ^^41743 SBE ]> □ □ □ 3 7 h 2 D 41 « X I C Preliminary Information 1 Megabit Module XM28C010 128K X 8 Bit 5 Volt, Byte Alterable E2PROM TYPICAL FEATURES • High Density 1 Megabit 128K x 8 E2PROM Module • Access Time of 120 ns at -55°C to +125°C

Contextual Info: i m X28C010 1M 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * Access Time: 120ns * Simple Byte and Page Write — Single 5V Supply — No External High Voltages or Vpp Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms

GDIP1-T32

Abstract: F3262 INTERSIL LCC-32 12c772 F326
Contextual Info: X28C010, X28HT010 Data Sheet February 12, 2007 5V, Byte Alterable EEPROM Features The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the

X28C0101

Abstract: FN8105 x28c010dmb-20 X28C010 X28C010D X28C010D-12 X28C010D-15 X28C010DI X28C010DI-12 X28C010DI-15
Contextual Info: X28C010 Data Sheet May 11, 2005 FN8105.0 5 Volt, Byte Alterable EEPROM Features The Intersil X28C010 is a 128K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C010 is a 5V only device. The

Contextual Info: X28C010, X28HT010 Data Sheet February 12, 2007 5V, Byte Alterable EEPROM Features The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersil's proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the

Contextual Info: i X28C010 1M m 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 120ns • Simple Byte and Page Write — Single 5V Supply — No External High Voltages or VPP Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms

X28C0101

Abstract: XICOR X28C010
Contextual Info: Haas ADVANCED INFORMATION 1M Commercial X28C010 _ _ Industrial_ X28C010I_ îZoK x 8 Bit Electrically Erasable PROM FEATURES • Low Power CMOS — 53 mA Active Current Max. — 590 fxA Standby Current Max. • High Speed Page Write Operation

Contextual Info: H iE X28C010 1M K 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 120ns • Simple Byte and Page Write — Single 5V Supply — No External High Voltages or V PP Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms

X28C010M

Abstract: jis f07 A12C X28C010 X28C010I X28C010-12
Contextual Info: X y X28C010 1M ü u 1 128 K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 120 ns • SIMPLE Byte and Page Write — Single 5 Volt Supply — No External High Voltages or V PP Control Circuits — Self Timed — No Erase Before Write

Contextual Info: y ü X28C010 1M 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * Access Time: 120 ns * SIMPLE Byte and Page Write — Single S Volt Supply — No External High Voltages or Vpp Control

X28C0101

Contextual Info: i m X28C010 1M 128K X 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * Access Time: 120ns * Simple Byte and Page Write — Single 5V Supply — No External High Voltages or Vpp Control Circuits -S e lf-T im e d — No Erase Before Write — No Complex Programming Algorithms

lk 3058

Contextual Info: i m X28C010 1M 128K X 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 120ns • Simple Byte and Page Write — Single 5V Supply — No External High Voltages o r VPP Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithm s

X28C010

Abstract: X28C010-20 X28C010-25 X28C010I X28C010M XICOR X28C010 a8a16
Contextual Info: X28C010 X28C010 1M 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • • The Xicor X28C010 is a 128K x 8 E2PROM, fabricated with Xicor's proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C010 is a 5V only device. The

64 CERAMIC LEADLESS CHIP CARRIER LCC

Abstract: T05 Package transistor T04 X28C010 X28C010-20 X28C010-25 X28C010I X28C010M XICOR X28C010
Contextual Info: X28C010 X28C010 1M 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • • The Xicor X28C010 is a 128K x 8 E2PROM, fabricated with Xicor's proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C010 is a 5V only device. The

Contextual Info: X28C010 1M 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 120ns • Simple Byte and Page Write — Single 5V Supply — No External High Voltages or V PP Control Cir­ cuits — Self-Timed • No E ra se B efo re W rite • No C o m p le x P ro g ra m m in g A lg o rith m s

Contextual Info: t o X28C010 1M u r 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 120 ns • SIMPLE Byte and Page Write — Single 5 Volt Supply — No External High Voltages or Vpp Control