X3C21P1 Search Results

hybrid coupler 3dB 180

Abstract: X3C21P1-03S 180 degree 3dB coupler hybrid 180 couplers hybrid coupler X3C21P1 210F RF35 RO4003 180 Degree hybrid Xinger
Contextual Info: ` Model X3C21P1-03S Rev B Hybrid Coupler 3 dB, 90° Description The X3C21P1-03S is a low profile, high performance 3dB hybrid coupler in a new easy to use, manufacturing friendly surface mount package. It is designed for LTE and WCDMA band applications. The X3C21P1-03S is

180 Degree hybrid Xinger

Abstract: hybrid coupler 3dB 180 hybrid 180 couplers X3C21P1-03S PCB Rogers RO4003 substrate datasheet 210F RF35 RO4003
Contextual Info: ` Model X3C21P1-03S Rev B Hybrid Coupler 3 dB, 90°° Description The X3C21P1-03S is a low profile, high performance 3dB hybrid coupler in a new easy to use, manufacturing friendly surface mount package. It is designed for LTE and WIMAX band applications. The X3C21P1-03S is

X3C21P1

Abstract: 210F RF35 RO4003 X3C21P1-05S X3C21P1-05
Contextual Info: Model X3C21P1-05S Rev A 5dB Directional Coupler Description The X3C21P1-05S is a low profile, high performance 5dB directional coupler in a new easy to use, manufacturing friendly surface mount package. It is designed for WCDMA and LTE applications. The X3C21P1-05S is designed particularly for non-binary split and combine

X3C21P1-05S

Abstract: 1A130 X3C21P1-05
Contextual Info: Model X3C21P1-05S Rev A 5dB Directional Coupler Description The X3C21P1-05S is a low profile, high performance 5dB directional coupler in a new easy to use, manufacturing friendly surface mount package. It is designed for WCDMA and LTE applications. The X3C21P1-05S is designed particularly for non-binary split and combine

180 Degree hybrid Xinger

Abstract: variable phase shifter doherty 2200MHz 180 degree 3dB coupler x3c21p1-03s
Contextual Info: ` Model X3C21P1-03S Rev C Hybrid Coupler 3 dB, 90°° Description The X3C21P1-03S is a low profile, high performance 3dB hybrid coupler in a new easy to use, manufacturing friendly surface mount package. It is designed for LTE and WIMAX band applications. The X3C21P1-03S is

FR4 dielectric constant 4.6

Abstract: X3C21P1 X3C21P1-05S 210F RF35 RO4003 X3C21P1-05 X3C21
Contextual Info: Model X3C21P1-05S Rev A 5dB Directional Coupler Description The X3C21P1-05S is a low profile, high performance 5dB directional coupler in a new easy to use, manufacturing friendly surface mount package. It is designed for WCDMA and LTE applications. The X3C21P1-05S is designed particularly for non-binary split and combine

Contextual Info: Model X3C21P1-04S Rev A PRELIMINARY 4dB Directional Coupler Description The X3C21P1-04S is a low profile, high performance 4dB directional coupler in a new easy to use, manufacturing friendly surface mount package. It is designed for DC, WCDMA, LTE and PCS applications.

2-WAY 180 degree hybrid

Abstract: 180 Degree hybrid Xinger
Contextual Info: ` Model X3C21P1-03S Rev B Hybrid Coupler 3 dB, 90° Description The X3C21P1-03S is a low profile, high performance 3dB hybrid coupler in a new easy to use, manufacturing friendly surface mount package. It is designed for LTE and WIMAX band applications. The X3C21P1-03S is

SMALL ELECTRONICS PROJECTS

Abstract: 3db couplers stripline directional couplers xinger x3c09p2 X3C21P1-05 Anaren Peter Parts Electronics X3C21P1 X3C26P1-30
Contextual Info: FOR IMMEDIATE RELEASE FROM: CONTACT: Anaren, Inc. Corporate Headquarters 6635 Kirkville Road East Syracuse, NY 13057 John Hoeschele Mktg. Comm. / Gov’t Rel. Mgr. Tel: 315.432.8909 E: jhoeschele@anaren.com ANAREN LAUNCHES XINGER -III BRAND HYBRID AND DIRECTIONAL COUPLERS

ON SEMICONDUCTOR J122

Abstract: J730 512 j122 MHz-2170 EMVY500ADA221MJA0G ATC600F1R2BT250XT 8383d 146 J122
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical

Contextual Info: PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power ampliier applications in the 2110 to 2170 MHz frequency band. Features

j295

Abstract: SEMICONDUCTOR J598 J585 843 j122 GRM31B j338 j0606
Contextual Info: Document Number: MD7IC2012N Rev. 0, 4/2013 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2012N wideband integrated circuit is designed with on−chip matching that makes it usable from 1805 to 2170 MHz. This multi−stage

Contextual Info: PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz Description The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. Its asymmetric and dual-path

Contextual Info: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for

trm a55

Contextual Info: EMC Technology RF & MICROWAVE CABLE ASSEMBLIES & COAXIAL COMPONENTS CATALOG ASR Lab-­Flex Lab-­Flex® S Lab-­Flex® AF Semi-­Rigid, Conformable & Flexible Semi-­Rigid Low Loss RG Series Test Cable Assemblies DQG&RD[LDO3DVVLYH&RPSRQHQWV

ARDUINO UNO REV3 - RETAIL

Abstract: BCM43362 Futaba 5 lt 51 Mediatek Gps Mt3329 T010010 Arduino Mega2560 XBee-PRO s1 PIC24F16ka102 Free Projects futaba transmitter parallax servo controller
Contextual Info: EMBEDDED SOLUTIONS Wireless Solutions Anaren . . . . . . . . . . . . . . . . . . . . . . . . . . 5, 6 Antenova . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Atmel . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Bluegiga . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Contextual Info: PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical

Contextual Info: PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features