XDR ELPIDA Search Results

XDR DRAM

Abstract: ODF10 K4Y54044UF
Contextual Info: K4Y5416 /08/04 4UF XDR DRAM 256Mbit XDR DRAM(F-die) 2M x 16(/8/4) bit x 8s Banks Version 1.0 Jan. 2005 Version 1.0 Jan. 2005 Page -1 K4Y5416(/08/04)4UF XDR DRAM Change History Version 0.1( July 2004) - Preliminary - First Copy - Based on the Rambus XDR DRAMTM Datasheet Version 0.81

xdr rambus

Abstract: xdr elpida
Contextual Info: XDR DRAM 8x16Mx4 Advance Information Overview XDR DRAM CSP x4 Pinout The 512Mb Rambus XDR DRAM device is a CMOS DRAM organized as 128M words by 4 bits. The use of Differential Rambus Signaling Level DRSL technology permits 4000/ 3200/2400 Mb/s transfer rates while using conventional system and board design technologies. XDR DRAM devices are

XDR Rambus

Abstract: 8x4Mx16
Contextual Info: XDR DRAM 8x4Mx16/8/4/2 Overview XDR DRAM CSP x16 Pinout The Rambus XDR™ DRAM device is a general-purpose highperformance memory device suitable for use in a broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low

E1819E20

Abstract: XDR 1gb EDX1032BBBG
Contextual Info: DATA SHEET 1G bits XDR DRAM EDX1032BBBG 32M words x 32 bits Overview Features The EDX1032BBBG is 1G bits XDR DRAM organized as 32M words × 32 bits. They are general-purpose high-performance memory devices suitable for use in a broad range of applications.

Contextual Info: DATA SHEET 1G bits XDR DRAM EDX1032BBBG 32M words x 32 bits Overview Features The EDX1032BBBG is 1G bits XDR DRAM organized as 32M words × 32 bits. They are general-purpose high-performance memory devices suitable for use in a broad range of applications.

104BA

Contextual Info: Preliminary K4Y5002 /04/08/16 4UC XDRTM DRAM 512Mbit XDR DRAM(C-die) 4M x 16(/8/4/2) bit x 8s Banks Version 0.3 Aug 2005 XDR is a trademark of Rambus Inc. Version 0.3 Aug 2005 Page -1 Preliminary K4Y5002(/04/08/16)4UC XDRTM DRAM Change History Version 0.1 (May 2005) - Preliminary

playstation 3

Abstract: playstation SONY PLAYSTATION 3 playstation controller XDR Rambus DDR2-667 DDR2-800 DDR333 DDR400 104BA
Contextual Info: XDR DRAM Industry demand for memory bandwidth in next-generation digital consumer electronics, such as high-definition digital television, home servers and high-end 3-D graphics applications, is growing rapidly as more content becomes available and as processor

Rambus XDR

Abstract: DDR3-1333 XDR Rambus DDR2 x32 ELPIDA DDR3 XDR DRAM DDR2-667 DDR2-800 DDR333 DDR400
Contextual Info: XDR DRAM Industry demand for memory bandwidth in next-generation digital consumer electronics, such as high-definition digital television, home servers and high-end 3-D graphics applications, is growing rapidly as more content becomes available and as processor performance becomes more robust.

Contextual Info: K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM TM 512Mbit XDR DRAM C-die Revision 1.0 December 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Rambus XDR

Abstract: XDR Rambus EDX5116ADSE EDX5116ADSE-3C-E 8x4Mx16
Contextual Info: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

XDR Rambus

Abstract: EDX5116ACSE xdr elpida
Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ACSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

EDX5116ADSE-3C-E

Abstract: EDX5116ADSE
Contextual Info: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

XDR Rambus

Abstract: 8H001
Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

DQ15d

Abstract: EDX5116ADSE-3C-E x5116 E1033E40 EDX5116ADSE T21at 8x4Mx16
Contextual Info: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

K4Y50024UC

Abstract: K4Y50044UC K4Y50084UC K4Y50164UC
Contextual Info: K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM TM 512Mbit XDR DRAM C-die Revision 1.1 August 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K4Y50084UE-JCB3

Abstract: K4Y50164UE K4Y50164UE-JCB3
Contextual Info: K4Y50164UE K4Y50084UE K4Y50044UE K4Y50024UE XDRTM DRAM TM 512Mbit XDR DRAM E-die Revision 1.0 Feb., 2007 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

014701 b

Abstract: 8x4Mx16
Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

8x4Mx16

Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

EDX5116ACSE

Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ACSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

Contextual Info: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation

DDR3-1333

Abstract: DDR2-1066 ASIC XDR Rambus 104-FBGA DDR2-667 DDR2-800 DDR333 DDR400 ddr3 1333
Contextual Info: XDR DRAM 最新の高性能グラフィックスや高画質HDTV対応のホームサーバなど、先端の3D画像や高精細なデジタル 画像を扱うデジタル家電市場で、膨大なデータを瞬時に処理できるメモリの需要が高まっています。

DDR2 x32

Abstract: ELPIDA DDR3 DDR3 DRAM layout ddr3 sdram chip datasheets 128mb 512MB xdr elpida DRAM elpida ELPIDA DDR2
Contextual Info: Digital Consumer DRAM DRAM Solutions for All Digital Consumer Device Needs In the transition from analog to digital, advanced digital consumer devices have become part of our daily lives, and we are now exchanging information in many ways. To help this transition, Elpida Memory offers a diverse lineup of DRAM architectures for digital consumer devices

sdram pin voltage

Abstract: DRAM elpida elpida SDRAM
Contextual Info: Digital Consumer DRAM DRAM Solutions for All Digital Consumer Device Needs In the transition from analog to digital, advanced digital consumer devices have become part of our daily lives, and we are now exchanging information in many ways. To help this transition, Elpida Memory offers a diverse lineup of DRAM architectures for digital consumer devices